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    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    12.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体激光器件及其制造方法

    公开(公告)号：US20090262771A1

    公开(公告)日：2009-10-22

    申请号：US12090334

    申请日：2007-07-31

    申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

    发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

    IPC分类号： H01S5/026 ,  H01L21/00

    CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/04

    摘要： A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide).

    摘要翻译： 可以获得能够抑制波导损伤的半导体激光装置。 这种GaN基半导体激光器芯片（半导体激光器件）包括氮化物基半导体的n型GaN衬底和形成在n型GaN衬底上的氮化物基半导体的半导体层，并且具有构成 沿方向F延伸的波导。脊部（波导）形成在从半导体层的中心接近第一侧的区域上。 在与脊部（波导）的第一侧相对的区域上，从半导体层的侧面开始，在与脊部（波导管）的延伸方向F相交的方向上延伸。

    Semiconductor laser apparatus and fabrication method thereof
    13.
    发明授权
    Semiconductor laser apparatus and fabrication method thereof 有权
    半导体激光装置及其制造方法

    公开(公告)号：US07773654B2

    公开(公告)日：2010-08-10

    申请号：US11092947

    申请日：2005-03-30

    申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

    发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/4025 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/4087

    摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.

    摘要翻译： 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

    SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME
    14.
    发明申请
    SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
    半导体激光装置及其制造方法

    公开(公告)号：US20090097523A1

    公开(公告)日：2009-04-16

    申请号：US12333764

    申请日：2008-12-12

    申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

    发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

    IPC分类号： H01S5/00

    CPC分类号： H01S5/4025 ,  H01S5/4087

    摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

    摘要翻译： 第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。 第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。 焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。 红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。 红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。 第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。

    Nitride-based semiconductor light-emitting device and method of fabricating the same
    15.
    发明授权
    Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号：US07450622B2

    公开(公告)日：2008-11-11

    申请号：US11723846

    申请日：2007-03-22

    申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

    发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

    IPC分类号： H01S5/00

    CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/204 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2219 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18 ,  H01S2304/04

    摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

    摘要翻译： 获得能够稳定横向光束缚的氮化物系半导体发光元件。 该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面 的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中 路径部分。 因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。 因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

    Semiconductor laser element and semiconductor laser device
    16.
    发明申请
    Semiconductor laser element and semiconductor laser device 审中-公开
    半导体激光元件和半导体激光器件

    公开(公告)号：US20070274360A1

    公开(公告)日：2007-11-29

    申请号：US11710922

    申请日：2007-02-27

    申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

    发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/2223

    摘要： A semiconductor laser element includes a semiconductor layer, an insulating layer and an electrode. The semiconductor layer is formed on a substrate, and includes a raised portion extending along a predetermined direction and flat portions provided on outer sides in a width direction of the raised portion. The insulating layer is formed on upper surfaces of the flat portions and side surfaces of the raised portion. The electrode includes a first portion provided along the predetermined direction on the raised portion and a second portion including a plurality of protruding portions protruding outward from the first portion in the width direction of the raised portion. A gap through which the insulating layer is exposed is provided between each adjacent two of the plurality of protruding portions.

    摘要翻译： 半导体激光元件包括半导体层，绝缘层和电极。 半导体层形成在基板上，并且包括沿着预定方向延伸的凸起部分和设置在凸起部分的宽度方向上的外侧的平坦部分。 绝缘层形成在凸起部分的平坦部分和侧表面的上表面上。 电极包括沿着预定方向设置在凸起部分上的第一部分和第二部分，其包括从凸起部分的宽度方向上的第一部分向外突出的多个突出部分。 在相邻的两个突出部分之间设置有绝缘层暴露的间隙。

    Semiconductor laser apparatus and optical apparatus
    19.
    发明授权
    Semiconductor laser apparatus and optical apparatus 有权
    半导体激光装置及光学装置

    公开(公告)号：US08098699B2

    公开(公告)日：2012-01-17

    申请号：US12486240

    申请日：2009-06-17

    申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

    发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

    IPC分类号： H01S3/00

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01L2924/00014

    摘要： A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.

    摘要翻译： 半导体激光装置包括发射蓝紫色激光束的第一半导体激光装置，发射红色激光束的第二半导体激光装置和导电封装体。 第一半导体激光器件具有p侧焊盘电极和n侧电极。 第一半导体激光器件的p侧焊盘电极和n侧电极与封装主体电隔离。 第一半导体激光器件的p侧焊盘电极与产生正电位的驱动电路连接，而其n侧电极与产生负电位的直流电源连接。