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23 条记录 (耗时 0.022 秒)

    Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power
    12.
    发明授权
    Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power 有权
    具有旋转磁体组件的物理气相沉积室和集中供电的RF功率

    公开(公告)号：US08795487B2

    公开(公告)日：2014-08-05

    申请号：US13075841

    申请日：2011-03-30

    申请人： Alan Ritchie ,  Keith Miller

    发明人： Alan Ritchie ,  Keith Miller

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3405 ,  H01J37/3455

    摘要： Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode.

    摘要翻译： 本发明的实施例提供了用于衬底的物理气相沉积（PVD）处理的改进的方法和装置。 在一些实施例中，用于物理气相沉积（PVD）的设备可以包括目标组件，其具有靶，其包括待沉积在衬底上的源材料，相对的源极分布板，与靶的背面相对并且电耦合到靶 沿着靶的外围边缘，以及设置在靶的背面和源分布板之间的空腔; 在与所述目标的中心轴重合的点处耦合到所述源分配板的电极; 以及磁控管组件，其包括设置在所述空腔内并具有与所述目标组件的中心轴线对准的旋转轴线的可旋转磁体，其中所述磁控管组件不被驱动通过所述电极。

    Radiation shield for cryogenic pump for high temperature physical vapor deposition
    14.
    发明申请
    Radiation shield for cryogenic pump for high temperature physical vapor deposition 有权
    用于高温物理气相沉积的低温泵的辐射屏蔽

    公开(公告)号：US20070101733A1

    公开(公告)日：2007-05-10

    申请号：US11267058

    申请日：2005-11-04

    申请人： Alan Ritchie

    发明人： Alan Ritchie

    IPC分类号： B01D8/00

    CPC分类号： F04B37/08 ,  C23C14/564

    摘要： A method and apparatus to shield a cryogenic pump in a physical vapor deposition chamber comprising a physical vapor deposition chamber, a gasket in thermal contact with the physical vapor deposition chamber, at least one post in contact with the gasket, a radiation shield connected at the top of the post, and at least one intermediate ring in contact with the post. A method and apparatus for a radiation shield for a cryogenic pump comprising a cryogenic pump with a region upstream from the cryogenic pump, a gasket in thermal contact the region upstream from the cryogenic pump, at least one post in contact with the gasket, a radiation shield connected at the top of the post, and at least one intermediate ring in contact with the post.

    摘要翻译： 一种在物理气相沉积室中屏蔽低温泵的方法和装置，包括物理气相沉积室，与物理气相沉积室热接触的衬垫，与衬垫接触的至少一个柱， 该职位的顶部，以及至少一个与岗位接触的中间环。 一种用于低温泵的辐射屏蔽的方法和装置，包括：低温泵，其具有来自低温泵上游的区域，与低温泵上游区域热接触的垫圈，至少一个与垫圈接触的柱，辐射 屏蔽件连接在柱的顶部，以及至少一个与柱接触的中间环。

    UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION
    15.
    发明申请
    UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION 失效
    用于防止颗粒形成的CVD阻挡板的特殊钝化技术

    公开(公告)号：US20070022952A1

    公开(公告)日：2007-02-01

    申请号：US11459531

    申请日：2006-07-24

    申请人： Alan Ritchie ,  Wei Lee ,  Ted Guo

    发明人： Alan Ritchie ,  Wei Lee ,  Ted Guo

    IPC分类号： C23C14/32 ,  C23F1/00 ,  C23C16/00

    CPC分类号： C23C16/45561 ,  C23C14/165 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45591 ,  Y10T29/497 ,  Y10T29/49826 ,  Y10T137/0491 ,  Y10T137/9029

    摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

    摘要翻译： 提供化学气相沉积室的阻挡板和处理阻挡板的方法。 阻挡板限定穿过其中的多个孔，并且具有至少约99.5％纯度的上表面和下表面，其最大限度地减小阻挡板上的污染颗粒的成核。 可以在阻挡板的上表面和下表面上形成物理气相沉积涂层，例如铝物理气相沉积涂层。 还提供了包括其上具有物理气相沉积涂层的阻挡板的化学气相沉积室。

    Methods for depositing metal in high aspect ratio features
    16.
    发明授权
    Methods for depositing metal in high aspect ratio features 有权
    在高宽比特征中沉积金属的方法

    公开(公告)号：US08846451B2

    公开(公告)日：2014-09-30

    申请号：US13178870

    申请日：2011-07-08

    申请人： Alan Ritchie ,  Karl Brown ,  John Pipitone

    发明人： Alan Ritchie ,  Karl Brown ,  John Pipitone

    IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/285 ,  H01J37/34 ,  H01L21/768 ,  C23C14/34 ,  C23C14/04 ,  C23C14/35 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56

    CPC分类号： H01L21/76898 ,  C23C14/046 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/354 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

    摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

    摘要翻译： 本文提供了在基板上形成的高纵横比特征中沉积金属的方法。 在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够 以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些， 以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

    Method for plasma ignition
    19.
    发明申请
    Method for plasma ignition 有权
    等离子体点火方法

    公开(公告)号：US20070181063A1

    公开(公告)日：2007-08-09

    申请号：US11346785

    申请日：2006-02-03

    申请人： Alan Ritchie ,  Adolph Allen

    发明人： Alan Ritchie ,  Adolph Allen

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32009

    摘要： A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.

    摘要翻译： 本文提供了一种用于点燃半导体处理室中的等离子体的方法。 在一个实施例中，一种用于点燃具有电隔离阳极的半导体衬底处理室中的等离子体的方法，其中等离子体在将等离子体点火电压施加到处理室的阴极时不能点燃，包括降低幅度的步骤 施加到阴极的电压; 将等离子体点火电压重新施加到阴极; 并监测处理室以确定等离子体是否已点燃。 监测处理室的步骤可以具有第一时间段的持续时间。 降低施加到阴极的电压的大小的步骤可以具有第二时间段的持续时间。 可以重复降低阴极电压幅度并重新施加等离子体点火电压的步骤，直到等离子体点燃。