PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE
    13.
    发明申请
    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE 有权
    图案形成方法,抗紫外线敏感性或辐射敏感性树脂组合物,电阻膜,使用其的电子器件的制造方法和电子器件

    公开(公告)号:US20140349224A1

    公开(公告)日:2014-11-27

    申请号:US14451901

    申请日:2014-08-05

    Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a compound capable of decomposing by the action of an acid to generate an acid, and (D) a solvent; (2) a step of exposing the film by using an actinic ray or radiation, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.

    Abstract translation: 提供了一种图案形成方法,其包括(1)通过使用含有(A)含有酸可分解重复单元的树脂并且能够降低溶解度的光化射线敏感性或辐射敏感性树脂组合物形成膜的步骤 对于含有机溶剂的显影剂,通过酸的作用,(B)能够在用光化射线或辐射照射时能够产生酸的化合物,(C)能够通过酸的作用分解以产生酸的化合物, 酸,和(D)溶剂; (2)通过使用光化射线或辐射使膜曝光的步骤,以及(4)通过使用含有机溶剂的显影剂显影曝光的膜以形成负图案的步骤。

    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE
    15.
    发明申请
    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE 审中-公开
    图案形成方法,电子束敏感或极端超紫外线辐射敏感性树脂组合物,电阻膜,使用其和电子器件的电子器件的制造方法

    公开(公告)号:US20140199617A1

    公开(公告)日:2014-07-17

    申请号:US14227444

    申请日:2014-03-27

    Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid and (B) a low molecular weight compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation and decomposing by an action of an acid to decrease a solubility of the low molecular weight compound (B) in an organic solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of developing the film with a developer containing an organic solvent after the exposing to form a negative pattern.

    Abstract translation: 图案形成方法包括以下顺序:用电子束敏感或极紫外线辐射敏感性树脂组合物形成膜的步骤(1),其包含(A)具有酸分解重复单元并能够降低的树脂 通过酸的作用使树脂(A)在含有有机溶剂的显影剂中的溶解度和(B)在电子束照射或极紫外线照射时能产生酸的低分子量化合物,并通过动作分解 的酸,以降低低分子量化合物(B)在有机溶剂中的溶解度; 步骤(2),用电子束或极紫外线辐射曝光胶片; 以及在暴露之后用含有机溶剂的显影剂显影该膜以形成负图案的步骤(4)。

    COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

    公开(公告)号:US20220283499A1

    公开(公告)日:2022-09-08

    申请号:US17748500

    申请日:2022-05-19

    Abstract: The present invention provides a composition for forming an underlayer film, with which an underlayer film having excellent surface flatness and solvent resistance can be formed. In addition, the present invention provides a resist pattern forming method and a manufacturing method of an electronic device, which are related to the composition for forming an underlayer film. The composition for forming an underlayer film according to the present invention is a composition for forming an underlayer film, which is used for forming an underlayer film under a resist film, including a monomer or a polymer containing an aromatic ring and a halogen-based organic solvent, in which a content of the halogen-based organic solvent is 0.001 to 50 ppm by mass with respect to a total mass of the composition for forming an underlayer film.

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