公开(公告)号：US08044416B2

公开(公告)日：2011-10-25

申请号：US12093549

申请日：2008-03-25

申请人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

发明人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

IPC分类号： H01L33/30

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44

摘要： One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.

摘要翻译： 本发明的一个实施例提供一种制造大功率发光二极管（LED）的方法。 该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。 该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构，其中相应的台面支撑单独的LED结构。 此外，该方法包括将多层结构粘合到导电基底上。 该方法还包括去除生长底物。 此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。 此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

公开(公告)号：US20110140081A1

公开(公告)日：2011-06-16

申请号：US13059913

申请日：2008-08-19

申请人： Fengyi Jiang ,  Li Wang

发明人： Fengyi Jiang ,  Li Wang

IPC分类号： H01L33/06 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode.

摘要翻译： 一种制造半导体发光器件的方法包括在第一衬底上制造多层半导体结构，其中所述多层半导体结构包括第一掺杂半导体层，MQW有源层，第二掺杂半导体层和第一钝化层。 该方法还包括图案化和蚀刻第一钝化层的一部分以暴露第一掺杂半导体层。 然后形成第一电极，其耦合到第一掺杂半导体层。 接着，将多层结构体接合到第二基板上; 并且去除第一衬底。 形成第二电极，其耦合到第二掺杂半导体层。 此外，形成第二钝化层，其基本上覆盖多层结构的侧壁和第二掺杂半导体层的未被第二电极覆盖的部分表面。

公开(公告)号：US07829359B2

公开(公告)日：2010-11-09

申请号：US12093512

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

摘要翻译： 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。 该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极 在第二掺杂半导体层上。

公开(公告)号：US07741632B2

公开(公告)日：2010-06-22

申请号：US11778213

申请日：2007-07-16

申请人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Yingwen Tang ,  Changda Zheng ,  Junlin Liu ,  Weihua Liu ,  Guping Wang

发明人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Yingwen Tang ,  Changda Zheng ,  Junlin Liu ,  Weihua Liu ,  Guping Wang

IPC分类号： H01L33/00

CPC分类号： H01L33/641 ,  H01L33/0079 ,  H01L33/32

摘要： One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.

摘要翻译： 本发明的一个实施例提供了一种InGaAlN基半导体发光器件，其包括基于InGaAlN的半导体多层结构和支持InGaAlN基半导体多层结构的碳基衬底，其中所述碳基衬底包括至少一个 碳基层。 该碳基基板具有高导热性和低电阻率。

公开(公告)号：US07692205B2

公开(公告)日：2010-04-06

申请号：US12067767

申请日：2006-09-29

申请人： Li Wang ,  Fengyi Jiang ,  Wenqing Fang

发明人： Li Wang ,  Fengyi Jiang ,  Wenqing Fang

IPC分类号： H01L27/15

CPC分类号： H01L33/38 ,  H01L24/05 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/0088 ,  H01L51/0094 ,  H01L51/5012 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/00

摘要： A semiconductor light-emitting device, the device includes a substrate, a semiconductor stacked layer, a lead electrode and a lead, wherein the semiconductor stacked layer at least includes a N-type layer and a P-type layer, at least one of the N-type layer and the P-type layer has an opening, the opening is just beneath the lead; or includes a conductive substrate having a main surface and a back surface, an adhesive metal layer, a reflective/ohmic metal layer, a semiconductor stacked layer, a lead electrode and a lead sequentially deposited on the main surface of the substrate, the reflective/ohmic metal layer has an opening, the opening is just beneath the lead.

摘要翻译： 一种半导体发光器件，该器件包括衬底，半导体堆叠层，引线电极和引线，其中半导体层叠层至少包括N型层和P型层，至少一个 N型层和P型层有开口，开口正好位于引线下方; 或者包括依次沉积在基板的主表面上的具有主表面和背表面的导电基板，粘合金属层，反射/欧姆金属层，半导体堆叠层，引线电极和引线，反射/ 欧姆金属层具有开口，开口正好位于引线下方。

公开(公告)号：US07615420B2

公开(公告)日：2009-11-10

申请号：US12067761

申请日：2006-09-26

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/38 ,  H01L21/22

CPC分类号： H01L21/02642 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality.

摘要翻译： 在硅衬底上制造铟镓铝（InGaAlN）薄膜的方法，包括以下步骤：引入用于在线区域掩模膜的加工的镁金属，即形成一个镁掩模膜层或金属过渡层; 然后形成一个金属过渡层或镁掩模层，最后形成一层铟镓铝半导体层; 或者首先在硅衬底上形成一层金属过渡层，然后依次形成第一铟镓铝氮化物半导体层，镁掩模层和第二铟镓铝氮化物半导体层。 本发明可以降低铟镓铝材料的位错密度，提高晶体质量。

公开(公告)号：US20090026473A1

公开(公告)日：2009-01-29

申请号：US11915304

申请日：2006-05-26

申请人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/32 ,  H01L33/405

摘要： There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

摘要翻译： 提供了一种InGaAlN发光器件及其制造方法。 发光器件包括具有主表面和背表面的导电衬底，形成在衬底的主表面上的金属粘合层，形成在接合层上的光反射层，至少包括p- 以及设置在反射层上的n型InGaAlN层，与反射层直接接触的p型InGaAlN层和分别设置在所述n型InGaAlN层和导电基板的背面上的欧姆电极。

公开(公告)号：US20080261403A1

公开(公告)日：2008-10-23

申请号：US11776881

申请日：2007-07-12

申请人： Li Wang ,  Fengyi Jiang

发明人： Li Wang ,  Fengyi Jiang

IPC分类号： H01L21/306 ,  H01L29/06

CPC分类号： H01L33/007 ,  H01S5/32341 ,  H01S5/327

摘要： One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.

摘要翻译： 本发明的一个实施例提供了一种用于获得制造在沟槽分隔的衬底上的各个多层结构的高质量边界的方法。 在操作期间，该过程接收沟槽分隔的衬底，其中衬底表面被分隔成由沟槽阵列隔开的隔离沉积平台的阵列。 然后，该工艺在其中一个沉积平台上形成多层结构，其包括第一掺杂层，有源层和第二掺杂层。 接下来，该方法去除多层结构的侧壁。

公开(公告)号：US08431936B2

公开(公告)日：2013-04-30

申请号：US11841116

申请日：2007-08-20

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo

IPC分类号： H01L29/26 ,  H01L29/06

CPC分类号： H01L33/007 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/325

摘要： One embodiment of the present invention provides a method for fabricating a group III-V p-type nitride structure. The method comprises growing a first layer of p-type group III-V material with a first acceptor density in a first growing environment. The method further comprises growing a second layer of p-type group III-V material, which is thicker than the first layer and which has a second acceptor density, on top of the first layer in a second growing environment. In addition, the method comprises growing a third layer of p-type group III-V material, which is thinner than the second layer and which has a third acceptor density, on top of the second layer in a third growing environment.

摘要翻译： 本发明的一个实施例提供一种制造III-V族p型氮化物结构的方法。 该方法包括在第一生长环境中生长具有第一受体密度的第一层p型III-V族材料。 该方法还包括在第二生长环境中在第一层的顶部上生长第二层p型III-V族材料，该第二层厚度比第一层厚，并具有第二受体密度。 此外，该方法包括在第三生长环境中，在第二层的顶部上生长比第二层薄且具有第三受体密度的第三层p型III-V族材料。

公开(公告)号：US08222063B2

公开(公告)日：2012-07-17

申请号：US12160044

申请日：2008-03-26

申请人： Li Wang ,  Fengyi Jiang

发明人： Li Wang ,  Fengyi Jiang

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment.

摘要翻译： 本发明的一个实施例提供一种制造发光二极管（LED）的方法。 该方法包括在导电基板上制造基于InGaAlN的多层LED结构。 该方法还包括通过多层LED结构的有源区蚀刻预定图案的凹槽。 凹槽将发光区域与非发光区域分开。 此外，该方法包括在发光和非发光区域上沉积电极材料，从而形成电极。 此外，该方法包括沉积覆盖发光和非发光区域的钝化层。 此外，该方法包括去除电极上的钝化层，以使被电极材料和钝化层覆盖的非发光区域比发光区域和电极高，从而保护发光区域， 发射区域与测试设备接触。