公开(公告)号：US20190214235A1

公开(公告)日：2019-07-11

申请号：US16113913

申请日：2018-08-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kenetsu YOKOGAWA ,  Masakazu ISOZAKI ,  Yousuke SAKAI ,  Masahito MORI ,  Takao ARASE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  C23C4/02

CPC classification number: H01J37/32532 ,  C23C4/02 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/6875

Abstract: Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like member excluding a sidewall surface extending from an outer circumferential edge of the top-portion top surface.

公开(公告)号：US20190189396A1

公开(公告)日：2019-06-20

申请号：US15906983

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Taku IWASE ,  Tsutomu TETSUKA ,  Masakazu ISOZAKI ,  Kenetsu YOKOGAWA ,  Masahito MORI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  C23C16/507

CPC classification number: H01J37/3211 ,  C23C16/507 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02274 ,  H01L21/311

Abstract: A plasma processing apparatus includes: a processing room disposed inside a vacuum chamber; a sample stage disposed inside the processing room, having an upper surface on which a wafer to be processed is to be mounted; a dielectric discoid member opposed to the upper surface of the sample stage in an upper part of the processing room; a discoid upper electrode disposed having a side covered with the discoid member, the side facing the sample stage, the discoid upper electrode being to be supplied with first radio-frequency power for forming an electric field for forming plasma in the processing room; a coil disposed circumferentially above the processing room outside the vacuum chamber, the coil being configured to generate a magnetic field for forming the plasma; and a lower electrode disposed inside the sample stage, the lower electrode being to be supplied with second radio-frequency power for forming a bias potential on the wafer mounted on the sample stage. A ring-shaped recess and a metal ring-shaped member are provided between the discoid member and the upper electrode, the ring-shaped recess being formed on the discoid member, the metal ring-shaped member being embedded in the ring-shaped recess in contact with the upper electrode.

公开(公告)号：US20180122665A1

公开(公告)日：2018-05-03

申请号：US15718948

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20170194560A1

公开(公告)日：2017-07-06

申请号：US15251595

申请日：2016-08-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Makoto SATAKE ,  Masaki YAMADA ,  Kenetsu YOKOGAWA

IPC: H01L43/12 ,  H01J37/32 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01J37/32082 ,  H01J37/32816 ,  H01J2237/334 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: The present invention is a manufacturing method for manufacturing a magnetoresistive element, including a first step for oxidizing or reducing a magnetic film constituting the magnetoresistive element and a metal oxidation film constituting the magnetoresistive element, and a second step performed after the first step, wherein in the second step, in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are oxidized, the oxidized magnetic film constituting the magnetoresistive element or the oxidized metal oxidation film constituting the magnetoresistive element is selectively reduced, and in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are reduced, the reduced magnetic film constituting the magnetoresistive element or the reduced metal oxidation film constituting the magnetoresistive element is selectively oxidized.

公开(公告)号：US20170025255A1

公开(公告)日：2017-01-26

申请号：US15203851

申请日：2016-07-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Kenetsu YOKOGAWA

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32963

Abstract: A sample stage includes a metallic electrode block to which high-frequency power is supplied from a high-frequency power supply, a dielectric heat generation layer which is disposed on a top surface of the electrode block and in which a film-like heater receiving power and generating heat is disposed, a conductor layer which is disposed to cover the heat generation layer, a ring-like conductive layer which is disposed to surround the heat generation layer at an outer circumferential side of the heat generation layer and contacts the conductor layer and the electrode block, and an electrostatic adsorption layer which is disposed to cover the conductor layer and electrostatically adsorbs a sample. The conductor layer and the ring-like conductive layer have dimensions more than a skin depth of a current of the high-frequency power and the electrode block is maintained at a predetermined potential during processing of the sample.

Abstract translation: 样品台包括从高频电源供给高频电力的金属电极块，布置在电极块顶表面上的电介质发热层，其中膜状加热器接收功率 并且设置发热，设置成覆盖发热层的导体层，环状导电层，其设置成在发热层的外周侧包围发热层并与导体层接触， 电极块和静电吸附层，其设置成覆盖导体层并静电吸附样品。 导体层和环状导电层的尺寸大于高频电力的电流的趋肤深度，并且在样品处理期间电极块保持在预定电位。

公开(公告)号：US20160079107A1

公开(公告)日：2016-03-17

申请号：US14626911

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru ARAMAKI ,  Michikazu MORIMOTO ,  Kenetsu YOKOGAWA

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/32715

Abstract: In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket.

Abstract translation: 在等离子体处理装置中，具有被提供高频电力的样品台的烧结板的膜状电极的连接器部分包括布置在通孔内部的导体部分，其中上部部分结合到 薄膜状电极，其下部连接到高频电源的电源路径的端部，以及设置在导体部分和围绕导体部分的通孔内部的基板之间的凸台 并由绝缘材料制成。 位于导体部分中心的棒状部件的上端和围绕杆状部件的插座设置在高于凸台的位置，并且防止粘合剂进入插座和棒状部件之间 在插座的上端。

公开(公告)号：US20210111002A1

公开(公告)日：2021-04-15

申请号：US16463531

申请日：2018-05-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuki KONDO ,  Kenetsu YOKOGAWA ,  Masahito MORI ,  Satoshi UNE ,  Kazunori NAKAMOTO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.

公开(公告)号：US20200234924A1

公开(公告)日：2020-07-23

申请号：US15755338

申请日：2017-03-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kenetsu YOKOGAWA ,  Masakazu ISOZAKI ,  Masahito MORI

IPC: H01J37/32

Abstract: A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

公开(公告)号：US20190295823A1

公开(公告)日：2019-09-26

申请号：US16286338

申请日：2019-02-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Kenetsu YOKOGAWA ,  Taku IWASE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample. The plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted, wherein the first electrode and the second electrode are electrically connected to a corresponding positive electrode terminal and a corresponding negative electrode terminal of the DC power supply through the corresponding low pass filter circuits (LPF).

公开(公告)号：US20190122864A1

公开(公告)日：2019-04-25

申请号：US16228934

申请日：2018-12-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA ,  Masaru IZAWA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32192 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/31116

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.