公开(公告)号：US20200227270A1

公开(公告)日：2020-07-16

申请号：US16482106

申请日：2018-10-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Takao ARASE ,  Satoshi TERAKURA ,  Hayato WATANABE ,  Masahito MORI

IPC: H01L21/311 ,  H01L21/3213

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

公开(公告)号：US20200043744A1

公开(公告)日：2020-02-06

申请号：US16527520

申请日：2019-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Toru ITO ,  Masahito MORI ,  Tadamitsu KANEKIYO

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/66 ,  H01L21/67 ,  H01J37/32

Abstract: Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of O2 gas and CH3F gas, or CH2F2 gas.

公开(公告)号：US20190214235A1

公开(公告)日：2019-07-11

申请号：US16113913

申请日：2018-08-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kenetsu YOKOGAWA ,  Masakazu ISOZAKI ,  Yousuke SAKAI ,  Masahito MORI ,  Takao ARASE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  C23C4/02

CPC classification number: H01J37/32532 ,  C23C4/02 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/6875

Abstract: Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like member excluding a sidewall surface extending from an outer circumferential edge of the top-portion top surface.

公开(公告)号：US20190189396A1

公开(公告)日：2019-06-20

申请号：US15906983

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Taku IWASE ,  Tsutomu TETSUKA ,  Masakazu ISOZAKI ,  Kenetsu YOKOGAWA ,  Masahito MORI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  C23C16/507

CPC classification number: H01J37/3211 ,  C23C16/507 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02274 ,  H01L21/311

Abstract: A plasma processing apparatus includes: a processing room disposed inside a vacuum chamber; a sample stage disposed inside the processing room, having an upper surface on which a wafer to be processed is to be mounted; a dielectric discoid member opposed to the upper surface of the sample stage in an upper part of the processing room; a discoid upper electrode disposed having a side covered with the discoid member, the side facing the sample stage, the discoid upper electrode being to be supplied with first radio-frequency power for forming an electric field for forming plasma in the processing room; a coil disposed circumferentially above the processing room outside the vacuum chamber, the coil being configured to generate a magnetic field for forming the plasma; and a lower electrode disposed inside the sample stage, the lower electrode being to be supplied with second radio-frequency power for forming a bias potential on the wafer mounted on the sample stage. A ring-shaped recess and a metal ring-shaped member are provided between the discoid member and the upper electrode, the ring-shaped recess being formed on the discoid member, the metal ring-shaped member being embedded in the ring-shaped recess in contact with the upper electrode.

公开(公告)号：US20180122651A1

公开(公告)日：2018-05-03

申请号：US15701692

申请日：2017-09-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryo ISHIMARU ,  Satoshi UNE ,  Masahito MORI

IPC: H01L21/3213 ,  H01L21/28

CPC classification number: H01L21/32136 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/28273 ,  H01L21/30621 ,  H01L21/31116

Abstract: A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.

公开(公告)号：US20140116621A1

公开(公告)日：2014-05-01

申请号：US14033338

申请日：2013-09-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Naoyuki KOFUJI ,  Naoshi ITABASHI

IPC: H01J37/32

CPC classification number: H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

Abstract translation: 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。