-
11.发明授权Nitride semiconductor light emitting element and nitride semiconductor light emitting device 有权氮化物半导体发光元件和氮化物半导体发光器件公开(公告)号：US07880192B2
公开(公告)日：2011-02-01
申请号：US12159786
申请日：2006-12-27
IPC分类号： H01L21/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.
摘要翻译： 根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构 它们之间。 具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极32和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。
-
公开(公告)号：US20100259184A1
公开(公告)日：2010-10-14
申请号：US12279573
申请日：2007-02-15
CPC分类号： H01L33/20 , H01L21/02389 , H01L21/0254 , H01L21/0259 , H01L21/0262 , H01L21/02642 , H01L33/08 , H01L33/18 , H01L33/22
摘要： A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0
摘要翻译： 根据本发明的发光器件包括布置在GaN衬底7上的多个柱状半导体30和形成在每个柱状半导体30的侧面上的多个突起13.每个柱状半导体30具有发光 部分由氮化物化合物半导体构成，并在下端被GaN衬底7支撑。 柱状半导体30具有包括n包层9，有源层10和p包层11的多层结构，有源层10具有多量子阱结构，其中InWGa1-WN（0
-
13.发明申请NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权基于氮化物的半导体发光器件及其制造方法公开(公告)号：US20100244063A1
公开(公告)日：2010-09-30
申请号：US12739972
申请日：2009-09-07
申请人： Toshiya Yokogawa , Ryou Kato
发明人： Toshiya Yokogawa , Ryou Kato
CPC分类号： H01L33/007 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/025 , H01L33/12 , H01L33/16
摘要： A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an AlfGagN layer 38 (where f+g=1, f≧0, g≧0 and f
摘要翻译： 根据本发明的氮化物基半导体发光器件具有氮化物基半导体多层结构50.氮化物基半导体多层结构50包括：包含AlaInbGacN晶体层（其中a + b + c = 1，a≥0，b≥0，c≥0）。 AldGaeN溢出抑制层36（其中d + e = 1，d> 0和e≥0）; 和AlfGagN层38（其中f + g = 1，f≥0，g≥0和f
-
公开(公告)号：US20090022193A1
公开(公告)日：2009-01-22
申请号：US11908430
申请日：2006-03-09
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译： 根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。
-
公开(公告)号：US07470608B2
公开(公告)日：2008-12-30
申请号：US11359480
申请日：2006-02-23
IPC分类号： H01L21/44
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译： 本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和 凹部121。
-
公开(公告)号：US07030417B2
公开(公告)日：2006-04-18
申请号：US10633040
申请日：2003-08-04
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译： 本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和 凹部121。
-
公开(公告)号：US07009216B2
公开(公告)日：2006-03-07
申请号：US10718581
申请日：2003-11-24
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Toshiya Yokogawa
摘要： A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).
摘要翻译： 本发明的半导体发光器件包括n型InP衬底（1）和在n型InP衬底（1）上形成为条形的条形结构（10），并且由n型InP衬底 下包层（3），在与n型InP衬底（1）平行的方向上具有谐振器的有源层（4）和p型InP上覆层（5）。 条状结构（10）具有光子晶体结构（2），其具有矩形格子状的凹部9，并且配置有光子晶体结构（2）的凹部（9）的方向与谐振器方向 。 条状上电极（6）形成在条状结构（10）上以沿谐振器方向延伸。 如此构造的本发明的半导体发光器件被配置为沿垂直于n型InP衬底（1）的方向辐射光。
-
公开(公告)号：US06953954B2
公开(公告)日：2005-10-11
申请号：US10745567
申请日：2003-12-29
IPC分类号： H01L29/812 , H01L21/338 , H01L29/20 , H01L29/778 , H01L29/80 , H01L29/43
CPC分类号： H01L29/1029 , H01L29/2003 , H01L29/7785
摘要： A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.
摘要翻译： 本发明的等离子体振荡切换装置包括半导体基板101， 第一阻挡层103，其由III-V族化合物半导体构成并形成在基板上; 沟道层104，其由III-V族化合物半导体形成并形成在第一阻挡层上; 第二阻挡层105，其由III-V族化合物半导体形成并形成在沟道层上; 源极电极107，栅电极109和漏电极108，其中第一阻挡层包括n型扩散层103a，第二阻挡层包括p型扩散层105a，第二势垒层包括p型扩散层105a， 通道层比第一和第二阻挡层的带隙小，二维电子气体EG在第一阻挡层和沟道层之间的边界处的导带处累积，二维空穴气体HG被积聚 在第二阻挡层和沟道层之间的边界处的价带处，并且这些电极通过绝缘层106形成在阻挡层上。
-
公开(公告)号：US06778308B2
公开(公告)日：2004-08-17
申请号：US10652044
申请日：2003-09-02
IPC分类号： G02F1015
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
摘要翻译： 一种垂直光学调制器，包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极，其形成在电介质层内以形成整体的网状形状，以在网状形状的交点处彼此分离并且接触 同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。
-
公开(公告)号：US5956362A
公开(公告)日：1999-09-21
申请号：US806929
申请日：1997-02-26
申请人： Toshiya Yokogawa , Shigeo Yoshii
发明人： Toshiya Yokogawa , Shigeo Yoshii
CPC分类号： B82Y20/00 , H01S5/18341 , H01S5/0207 , H01S5/0264 , H01S5/18305 , H01S5/18308 , H01S5/18369 , H01S5/347 , H01S5/423
摘要： A vertical cavity type semiconductor light emitting device includes: a light emitting layer made of a II-IV group compound semiconductor material; a first II-VI group compound semiconductor layer which has an opening at a position corresponding to the inside of the light emitting layer; and an upper mirror and a lower mirror which are provided so as to interpose the light emitting layer therebetween. A current is injected through the opening into the light emitting layer.
摘要翻译： 一种垂直腔型半导体发光器件包括：由II-IV族化合物半导体材料制成的发光层; 第一II-VI族化合物半导体层，其在对应于发光层内部的位置处具有开口; 以及设置成将发光层插入其间的上镜和下镜。 电流通过开口注入发光层。
-
-
-
-
-
-
-
-
-
搜索结果
122 条记录 (耗时 0.047 秒)
