公开(公告)号：US20100259184A1

公开(公告)日：2010-10-14

申请号：US12279573

申请日：2007-02-15

申请人： Ryou Kato ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/44 ,  H01L27/15 ,  H01L33/02 ,  H05B37/02

CPC分类号： H01L33/20 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22

摘要： A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0

摘要翻译： 根据本发明的发光器件包括布置在GaN衬底7上的多个柱状半导体30和形成在每个柱状半导体30的侧面上的多个突起13.每个柱状半导体30具有发光 部分由氮化物化合物半导体构成，并在下端被GaN衬底7支撑。 柱状半导体30具有包括n包层9，有源层10和p包层11的多层结构，有源层10具有多量子阱结构，其中InWGa1-WN（0

公开(公告)号：US08729587B2

公开(公告)日：2014-05-20

申请号：US13596849

申请日：2012-08-28

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L33/30 ,  H01L33/50

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L29/045 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/32341

摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多 超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。 电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

公开(公告)号：US20100244063A1

公开(公告)日：2010-09-30

申请号：US12739972

申请日：2009-09-07

申请人： Toshiya Yokogawa ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Ryou Kato

IPC分类号： H01L33/32 ,  H01L33/26 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/025 ,  H01L33/12 ,  H01L33/16

摘要： A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an AlfGagN layer 38 (where f+g=1, f≧0, g≧0 and f

摘要翻译： 根据本发明的氮化物基半导体发光器件具有氮化物基半导体多层结构50.氮化物基半导体多层结构50包括：包含AlaInbGacN晶体层（其中a + b + c = 1，a≥0，b≥0，c≥0）。 AldGaeN溢出抑制层36（其中d + e = 1，d> 0和e≥0）; 和AlfGagN层38（其中f + g = 1，f≥0，g≥0和f

公开(公告)号：US08748899B2

公开(公告)日：2014-06-10

申请号：US13447368

申请日：2012-04-16

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L29/778 ,  H01L33/32 ,  H01L29/78

CPC分类号： H01L33/32 ,  H01L33/16 ,  H01L33/40 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2924/181 ,  Y10T436/112499 ,  H01L2924/00012

摘要： A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.

摘要翻译： 根据本公开的氮化物基半导体器件包括具有p型半导体区域的氮化物基半导体多层结构20，其表面12相对于m平面限定1至5度的倾斜角，以及 布置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）半导体层26制成。电极30包括Mg层32，其接触 与p型半导体区域的表面12以及形成在Mg层32上的金属层34.金属层34由选自Pt，Mo和Pd中的至少一种金属元素形成。

公开(公告)号：US08604591B2

公开(公告)日：2013-12-10

申请号：US13412618

申请日：2012-03-06

申请人： Toshiya Yokogawa ,  Ryou Kato ,  Naomi Anzue

发明人： Toshiya Yokogawa ,  Ryou Kato ,  Naomi Anzue

IPC分类号： H01L21/02 ,  H01L29/207 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/32 ,  H01L33/40

摘要： A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x≧0, y>0, z≧0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AldGaeN contact layer 26 includes a body region 26A which contains Mg of not less than 4×1019 cm−3 and not more than 2×1020 cm−3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×1021 cm−3.

摘要翻译： 氮化物基半导体器件包括其生长面为m面的p型AldGaeN层25和设置在p型AldGaeN层25上的电极30. AldGaeN层25包括p-AldGaeN接触层26，其为 由半径不大于26nm且不大于60nm的AlxGayInzN（x + y + z = 1，x> = 0，y> 0，z> = 0）制成。 p-AldGaeN接触层26包括主体区域26A，其包含不小于4×1019cm-3且不大于2×1020cm-3的Mg和与电极30接触的高浓度区域26B，以及 其Mg浓度不小于1×1021cm-3。

公开(公告)号：US20120091463A1

公开(公告)日：2012-04-19

申请号：US13203786

申请日：2010-12-07

申请人： Toshiya Yokogawa ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Ryou Kato

IPC分类号： H01L33/02

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/32

摘要： A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50a, which includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an AlfGagN layer 38 (where f+g=1, f≧0, g≧0and f

摘要翻译： 根据本发明的氮化物基半导体发光器件具有氮化物基半导体多层结构50a，其包括：包含AlaInbGacN晶体层（其中a + b + c = 1，a≥0， b≥0，c≥0）; AldGaeN溢出抑制层36（其中d + e = 1，d> 0和e≥0）; 和AlfGagN层38（其中f + g = 1，f≥0，g≥0和f

公开(公告)号：US20120021549A1

公开(公告)日：2012-01-26

申请号：US13260434

申请日：2010-03-24

申请人： Masaki Fujikane ,  Akira Inoue ,  Ryou Kato ,  Toshiya Yokogawa

发明人： Masaki Fujikane ,  Akira Inoue ,  Ryou Kato ,  Toshiya Yokogawa

IPC分类号： H01L33/32 ,  H01L21/20

CPC分类号： H01L33/0075 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16

摘要： A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber.

摘要翻译： 氮化物半导体层形成方法包括以下步骤：（S1）将基板放置在反应室中，所述基板至少在上表面包括-r面氮化物半导体晶体; （S2）通过加热放置在反应室中的基板来增加基板的温度; 和（S3）在衬底上生长氮化物半导体层。 在升温工序（S2）中，将氮源气体和III族元素源气体供给到反应室内。

公开(公告)号：US20120001223A1

公开(公告)日：2012-01-05

申请号：US13256061

申请日：2010-12-27

申请人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/14 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

摘要翻译： 氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1， 设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

公开(公告)号：US08546167B2

公开(公告)日：2013-10-01

申请号：US13405725

申请日：2012-02-27

申请人： Ryou Kato ,  Shunji Yoshida ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Shunji Yoshida ,  Toshiya Yokogawa

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/325

摘要： A nitride-based semiconductor light-emitting element includes an n-GaN layer 102, a p-GaN layer 107, and a GaN/InGaN multi-quantum well active layer 105, which is interposed between the n- and p-GaN layers 102 and 107. The GaN/InGaN multi-quantum well active layer 105 is an m-plane semiconductor layer, which includes an InxGa1-xN (where 0

摘要翻译： 氮化物系半导体发光元件包括n-GaN层102，p-GaN层107和GaN / InGaN多量子阱有源层105，其夹在n-p + GaN层102之间 GaN / InGaN多量子阱有源层105是m面半导体层，其包括厚度为6nm以上的In x Ga 1-x N（其中0

公开(公告)号：US20110297956A1

公开(公告)日：2011-12-08

申请号：US13201938

申请日：2009-10-21

申请人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

IPC分类号： H01L33/02

CPC分类号： C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L33/007

摘要： The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 700° C. to 775° C. is performed. In step (B), the growth rate of the m-plane InGaN layer is set in a range from 4.5 nm/min to 10 nm/min.

摘要翻译： 本发明是一种制造氮化镓系化合物半导体的方法，包括通过金属有机化学气相沉积生长发光峰值波长不小于500nm的m面InGaN层。 首先，进行在反应器中加热基板的工序（A）。 然后，向反应器供给包含In源气体，Ga源气体和N源气体的气体的步骤（B），并在生长中在衬底上生长In x Ga 1-x N晶体的m面InGaN层 进行从700℃到775℃的温度。 在步骤（B）中，将m面InGaN层的生长速度设定在4.5nm / min〜10nm / min的范围内。