利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

76 条记录 (耗时 0.035 秒)

    Vertical GaN JFET with Gate Source Electrodes on Regrown Gate
    15.
    发明申请
    Vertical GaN JFET with Gate Source Electrodes on Regrown Gate 有权
    垂直GaN JFET与栅极源电极在Regrown Gate

    公开(公告)号：US20130146886A1

    公开(公告)日：2013-06-13

    申请号：US13315720

    申请日：2011-12-09

    申请人： Donald R. Disney ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown

    发明人： Donald R. Disney ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown

    IPC分类号： H01L29/808 ,  H01L21/335 ,  H01L29/20

    CPC分类号： H01L29/8083 ,  H01L29/0623 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66446 ,  H01L29/66462 ,  H01L29/66909 ,  H01L29/66924

    摘要： A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure.

    摘要翻译： 半导体结构包括具有第一表面和第二表面的GaN衬底。 GaN衬底的特征在于第一导电类型和第一掺杂剂浓度。 第一电极电耦合到GaN衬底的第二表面。 半导体结构还包括耦合到GaN衬底的第一表面的第一导电类型的第一GaN外延层和耦合到第一GaN外延层的第二导电类型的第二GaN层。 第一GaN外延层包括沟道区。 第二GaN外延层包括栅极区域和边缘端接结构。 耦合到栅极区域的第二电极和耦合到沟道区域的第三电极都设置在边缘端接结构内。

    Method and system for a GAN vertical JFET utilizing a regrown gate
    16.
    发明授权
    Method and system for a GAN vertical JFET utilizing a regrown gate 有权
    使用再生栅的GAN垂直JFET的方法和系统

    公开(公告)号：US09184305B2

    公开(公告)日：2015-11-10

    申请号：US13198655

    申请日：2011-08-04

    申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    IPC分类号： H01L21/337 ,  H01L29/808 ,  H01L29/10 ,  H01L29/66 ,  H01L29/20

    CPC分类号： H01L29/8083 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924

    摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿着垂直方向。

    Epitaxial Lift-Off and Wafer Reuse
    20.
    发明申请
    Epitaxial Lift-Off and Wafer Reuse 审中-公开
    外延提升和晶圆再利用

    公开(公告)号：US20120309172A1

    公开(公告)日：2012-12-06

    申请号：US13118900

    申请日：2011-05-31

    申请人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

    发明人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

    IPC分类号： H01L21/20

    CPC分类号： H01L21/2654 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/0079

    摘要： A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer.

    摘要翻译： 根据本发明的实施例的重新使用III族氮化物生长衬底的方法包括在III族氮化物衬底上外延生长III族氮化物半导体结构。 III族氮化物半导体结构包括在牺牲层上生长的牺牲层和附加层。 牺牲层植入至少一种植入物种。 在注入的牺牲层处将III族氮化物衬底与附加层分离。 在一些实施例中，III族氮化物衬底是GaN，牺牲层是GaN，含铝的III族氮化物层或含铟的III族氮化物层。 在一些实施例中，通过蚀刻注入的牺牲层将III族氮化物衬底与附加层分离。