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11.发明授权公开(公告)号：US10913656B2
公开(公告)日：2021-02-09
申请号：US16162026
申请日：2018-10-16
Applicant: Infineon Technologies AG
Inventor： Gerhard Metzger-Brueckl , Alfons Dehe , Uwe Hoeckele , Johann Strasser , Arnaud Walther
Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.
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公开(公告)号：US09659992B2
公开(公告)日：2017-05-23
申请号：US14186390
申请日：2014-02-21
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14689 , H01L27/14609 , H01L27/14627 , H01L27/14629 , H01L27/14687 , H01L27/14806
Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
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公开(公告)号：US08999187B2
公开(公告)日：2015-04-07
申请号：US14092624
申请日：2013-11-27
Applicant: Infineon Technologies AG
Inventor： Sandra Obernhuber , Christof Jalics , Joerg Adler , Uwe Hoeckele , Walter Preis , Reinhard Goellner , Tanja Ippisch , Patricia Nickut
IPC: C03C15/00 , H01L41/297 , H03H3/04
CPC classification number: H01L41/297 , H03H3/04
Abstract: A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.
Abstract translation: 在衬底上制造器件的方法包括在衬底上形成层结构，在层结构上形成辅助层，在辅助层和衬底上形成平坦化层，通过化学机械抛光工艺使辅助层露出 以及至少部分去除所述辅助层以形成剩余辅助层或所述层结构和所述平坦化层的平坦表面。 化学机械抛光工艺相对于平坦化层具有第一去除速率，相对于辅助层具有第二去除速率，并且第一去除速率大于第二去除速率。
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公开(公告)号：US20140083973A1
公开(公告)日：2014-03-27
申请号：US14092624
申请日：2013-11-27
Applicant: Infineon Technologies AG
Inventor： Sandra Obernhuber , Christof Jalics , Joerg Adler , Uwe Hoeckele , Walter Preis , Reinhard Goellner , Tanja Schest , Patricia Nickut
IPC: H01L41/297
CPC classification number: H01L41/297 , H03H3/04
Abstract: A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.
Abstract translation: 在衬底上制造器件的方法包括在衬底上形成层结构，在层结构上形成辅助层，在辅助层和衬底上形成平坦化层，通过化学机械抛光工艺使辅助层露出 以及至少部分去除所述辅助层以形成剩余辅助层或所述层结构和所述平坦化层的平坦表面。 化学机械抛光工艺相对于平坦化层具有第一去除速率，相对于辅助层具有第二去除速率，并且第一去除速率大于第二去除速率。
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15.发明申请Through Substrate Via Semiconductor Components And Methods of Formation Thereof 有权通过基板通过半导体元件及其形成方法公开(公告)号：US20130267093A1
公开(公告)日：2013-10-10
申请号：US13830185
申请日：2013-03-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Albert Birner , Uwe Hoeckele , Thomas Kunstmann , Uwe Seidel
IPC: H01L21/768
CPC classification number: H01L21/76877 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/04042 , H01L2224/0557 , H01L2224/05571 , H01L2224/13009 , H01L2224/13025 , H01L2224/16 , H01L2924/00014 , H01L2924/0002 , H01L2924/01019 , H01L2924/01068 , H01L2924/01079 , H01L2924/00012 , H01L2224/05552
Abstract: A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via by filling an opening with a first fill material and depositing a first insulating layer over the first fill material, the first insulating layer not being deposited on sidewalls of the fill material in the opening, wherein sidewalls of the first insulating layer form a gap over the opening. The method further includes forming a void by sealing the opening using a second insulating layer.
Abstract translation: 描述了在形成半导体部件时通过衬底通孔形成的结构和方法。 在一个实施例中，本发明描述了一种通过用第一填充材料填充开口形成通孔基底通孔的方法，并且在第一填充材料上沉积第一绝缘层，第一绝缘层未沉积在填充材料的侧壁上 所述开口，其中所述第一绝缘层的侧壁在所述开口上形成间隙。 该方法还包括通过使用第二绝缘层密封开口来形成空隙。
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Patent Agency Ranking
公开(公告)号：US20200006418A1
公开(公告)日：2020-01-02
申请号：US16566171
申请日：2019-09-10
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
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公开(公告)号：US20170301721A1
公开(公告)日：2017-10-19
申请号：US15586498
申请日：2017-05-04
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14689 , H01L27/14609 , H01L27/14627 , H01L27/14629 , H01L27/14687 , H01L27/14806
Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
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18.发明申请公开(公告)号：US20160247739A1
公开(公告)日：2016-08-25
申请号：US15047098
申请日：2016-02-18
Applicant: Infineon Technologies AG
Inventor： Claus Von Waechter , Christian Altschaeffl , Holger Doepke , Uwe Hoeckele , Franz Xaver Muehlbauer , Daniel Porwol , Tobias Schmidt , Christian Schweiger , Carsten Von Koblinski
CPC classification number: H01L23/26 , H01L23/3135 , H01L23/564 , H01L24/96 , H01L24/97 , H01L2224/04105 , H01L2224/12105 , H01L2924/3025
Abstract: A bonded system includes a reconstituted wafer including a hygroscopic material. A moisture barrier layer is arranged over a surface of the reconstituted wafer. An adhesive layer is arranged over a surface of the moisture barrier opposite the reconstituted wafer. A carrier is arranged over a surface of the adhesive layer opposite the moisture barrier. The adhesive layer adhesively bonds the reconstituted wafer and the carrier together.
Abstract translation: 粘合系统包括包括吸湿材料的重构晶片。 防潮层设置在重构晶片的表面上。 粘合剂层布置在与重构的晶片相对的防潮层的表面上。 载体布置在与防潮层相对的粘合剂层的表面上。 粘合剂层将重构的晶片和载体粘合地结合在一起。
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19.发明申请Chip Comprising an Integrated Circuit, Fabrication Method and Method for Locally Rendering a Carbonic Layer Conductive 审中-公开芯片组成集成电路，制作方法和方法，用于局部渲染碳层导电公开(公告)号：US20140073132A1
公开(公告)日：2014-03-13
申请号：US14078104
申请日：2013-11-12
Applicant: Infineon Technologies AG
Inventor： Uwe Hoeckele
IPC: H01L21/768
CPC classification number: H01L21/76886 , H01L21/0237 , H01L21/02444 , H01L21/02527 , H01L21/02675 , H01L21/76823 , H01L21/76838 , H01L21/76867 , H01L23/53276 , H01L45/149 , H01L2221/1094 , H01L2924/0002 , Y10S977/81 , H01L2924/00
Abstract: A method can be used for locally rendering a carbonic isolating layer conductive. In one embodiment, a laser beam is directed onto the carbonic isolating layer so as to convert amorphous carbon of the carbonic isolating layer into graphite-like carbon. In another embodiment, the carbonic layer is heated so as to form a conducting portion of the layer so that a lateral path through the conducting portion connects two circuit elements of the integrated circuit.
Abstract translation: 一种方法可以用于局部渲染碳隔离层导电。 在一个实施例中，激光束被引导到碳隔离层上，以将碳隔离层的无定形碳转变为石墨状碳。 在另一个实施例中，加热碳层以形成该层的导电部分，使得穿过导电部分的横向路径连接集成电路的两个电路元件。
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公开(公告)号：US20200321388A1
公开(公告)日：2020-10-08
申请号：US16909745
申请日：2020-06-23
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
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