公开(公告)号：US10276626B2

公开(公告)日：2019-04-30

申请号：US15857086

申请日：2017-12-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/0296

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.

公开(公告)号：US10079149B2

公开(公告)日：2018-09-18

申请号：US15588976

申请日：2017-05-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han ,  Ning Li ,  Jianshi Tang

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/2807 ,  B82Y10/00 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/32056 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/775 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

公开(公告)号：US10062857B2

公开(公告)日：2018-08-28

申请号：US15594233

申请日：2017-05-12

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L51/10 ,  H01L51/05 ,  H01L51/00 ,  H01J21/10 ,  H01L29/06

CPC classification number: H01L51/0562 ,  H01J21/105 ,  H01L29/0673 ,  H01L51/0017 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0558

Abstract: Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

公开(公告)号：US20180205031A1

公开(公告)日：2018-07-19

申请号：US15407616

申请日：2017-01-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L51/5012 ,  B82Y20/00 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/5221 ,  H01L51/56

Abstract: A technique relates to a vertical device. A gate is embedded in a transparent substrate. A gate dielectric material is disposed on the gate. A nanotube film is disposed on the gate dielectric material. A quantum dot light emitting diode is disposed on a portion of the nanotube film.

公开(公告)号：US20180200785A1

公开(公告)日：2018-07-19

申请号：US15407432

申请日：2017-01-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Juntao Li

IPC: B22F1/00 ,  H01L21/02 ,  H01L21/225 ,  H01L21/321 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/306 ,  C09K11/66 ,  B22F9/16 ,  B22F9/02

Abstract: A method for forming nanoparticles includes forming a stack of alternating layers including a first material disposed between a second material. The stack of alternating layers is patterned to form pillars. A dielectric layer is conformally deposited over the pillars. The pillars are annealed in an oxygen environment to modify a shape of the first material of the alternating layers. The dielectric layer and the second material are etched selectively to the first material to form nanoparticles from the first material.

公开(公告)号：US20180145270A1

公开(公告)日：2018-05-24

申请号：US15863202

申请日：2018-01-05

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Shu-Jen Han ,  Zhengwen Li ,  Fei Liu

IPC: H01L51/05 ,  H01L51/10 ,  H01L27/28 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L27/283 ,  H01L51/0006 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/0048 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/105

Abstract: A method of arranging at least one carbon nanotube on a semiconductor substrate includes depositing the at least one carbon nanotube on a dielectric layer of the semiconductor device. The method further includes arranging the at least one carbon nanotube on the dielectric layer in response to applying a voltage potential to an electrically conductive electrode of the semiconductor device, and applying a ground potential to an electrically conductive semiconductor layer of the semiconductor device.

公开(公告)号：US20180145109A1

公开(公告)日：2018-05-24

申请号：US15857086

申请日：2017-12-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/0296

CPC classification number: H01L27/14652 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14696 ,  H01L31/0296 ,  H01L31/032

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.

公开(公告)号：US20180138119A1

公开(公告)日：2018-05-17

申请号：US15850564

申请日：2017-12-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L23/525 ,  H01L29/06 ,  H01L23/532 ,  H01L23/367 ,  H01L23/373 ,  H01L23/528

CPC classification number: H01L23/525 ,  H01L21/02115 ,  H01L21/32053 ,  H01L21/823437 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3732 ,  H01L23/5228 ,  H01L23/5256 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/0649

Abstract: A semiconductor device includes a first dielectric layer formed on a second dielectric layer and planar contacts formed in the second dielectric layer. The planar contacts are spaced apart to form a gap therebetween. The first dielectric layer includes a thermally conductive dielectric layer and is formed on lateral sides of the planar contacts and in the gap. A resistive element is formed between the planar contacts over the gap and in contact with at least the thermally conductive dielectric layer in the gap.

公开(公告)号：US20180053733A1

公开(公告)日：2018-02-22

申请号：US15802590

申请日：2017-11-03

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/57 ,  H01L21/56 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/573 ,  H01L2924/3512

Abstract: A semiconductor chip includes a chip substrate; a self-destructive layer arranged on the chip substrate, the self-destructive layer including a pyrophoric reactant; and a sealant layer arranged on a surface of the self-destructive layer, on sidewalls of the self-destructive layer, and on the chip substrate such that the sealant layer forms a package seal on the semiconductor chip; wherein the pyrophoric reactant ignites spontaneously upon exposure to air.

公开(公告)号：US20180040515A1

公开(公告)日：2018-02-08

申请号：US15230443

申请日：2016-08-07

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/823462 ,  H01L21/0214 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/28088 ,  H01L21/28238 ,  H01L21/823857 ,  H01L27/088 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

Abstract: Method for fabricating semiconductor device comprising: forming a dummy gate on a first nitrided oxide layer and a non-nitrided oxide layer; nitridizing an exposed section of the non-nitrided oxide layer to form a second nitrided oxide layer; forming an interlayer dielectric on the first nitrided oxide layer and the second nitrided oxide layer; removing the dummy gate from the first nitrided oxide layer to form a first opening with the first nitrided oxide layer exposed in the first opening; removing the dummy gate from the non-nitrided oxide layer to form a second opening with a non-nitrided portion of oxide layer exposed in the second opening; removing the non-nitrided portion of the oxide layer; forming a first dielectric layer and first metal gate material in the first opening; and forming a second dielectric layer and second metal gate material in the second opening.