公开(公告)号：US09142401B2

公开(公告)日：2015-09-22

申请号：US14305359

申请日：2014-06-16

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Susiti ,  Markus Zundel ,  Reinhard Ploss

IPC: H01L27/108 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L29/10 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/739 ,  H01L21/3115 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/02321 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/3115 ,  H01L21/31155 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/06 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.

Abstract translation: 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。

公开(公告)号：US11888024B2

公开(公告)日：2024-01-30

申请号：US17404278

申请日：2021-08-17

Applicant: Infineon Technologies AG

Inventor： Reinhard Ploss ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/225 ,  H01L21/263 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/324 ,  H01L29/16 ,  H01L21/3115 ,  H01L29/32 ,  H01L29/167

CPC classification number: H01L29/0634 ,  H01L21/046 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/2253 ,  H01L21/2255 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/3065 ,  H01L21/324 ,  H01L29/16 ,  H01L29/1608 ,  H01L21/31155 ,  H01L29/167 ,  H01L29/32

Abstract: A method of forming a semiconductor device includes forming a trench in a semiconductor body; at least partially filling the trench with a filling material; introducing dopants into a portion of the filling material; and applying a first thermal processing to the semiconductor body to spread the dopants in the filling material along a vertical direction of the filling material by a diffusion process. The vertical doping profile of the dopants within the doped filling material is shaped during the first thermal processing. Additionally, the dopants are substantially confined to within the trench and substantially do not diffuse from the doped filling material into the semiconductor body during the first thermal processing. A second thermal processing is applied to the semiconductor body after the first thermal processing to cause diffusion of the dopants from the doped filling material into the semiconductor body adjoining the trench.

公开(公告)号：US09245811B2

公开(公告)日：2016-01-26

申请号：US14454741

申请日：2014-08-08

Applicant: Infineon Technologies AG

Inventor： Reinhard Ploss ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: H01L21/48 ,  H01L21/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/261 ,  H01L21/263 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L22/20 ,  H01L21/261 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/7813 ,  H01L29/8611 ,  H01L29/872

Abstract: A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation.

Abstract translation: 公开了一种用于处理具有基本掺杂的半导体晶片的方法。 该方法包括确定基本掺杂的掺杂浓度，以及通过后掺杂来适应半导体晶片的基本掺杂。 后掺杂包括以下方法中的至少一种：用于产生氢诱导的供体的质子注入和随后的热处理以及中子照射。 在这种情况下，以下参数中的至少一个取决于所确定的碱性掺杂的掺杂浓度：质子注入的注入剂量，热处理的温度和中子照射的照射剂量。

公开(公告)号：US20170316929A1

公开(公告)日：2017-11-02

申请号：US15650504

申请日：2017-07-14

Applicant: Infineon Technologies AG

Inventor： Helmut Oefner ,  Nico Caspary ,  Mohammad Momeni ,  Reinhard Ploss ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L29/66 ,  H01L21/18 ,  H01L21/28 ,  H01L21/322 ,  H01L21/225

CPC classification number: H01L29/7393 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/02008 ,  H01L21/0201 ,  H01L21/02016 ,  H01L21/187 ,  H01L21/2257 ,  H01L21/268 ,  H01L21/28238 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/76256 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the device wafer (110) to a first high temperature process for reducing the oxygen content of the device wafer (110) at least in a region (112a) at the second side (112); bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); processing the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); subjecting the substrate wafer (100) to a second high temperature process for reducing the oxygen content at least of the device wafer (110); and at least partially integrating at least one semiconductor component (140) into the device wafer (110) after the second high temperature process.

公开(公告)号：US09559020B2

公开(公告)日：2017-01-31

申请号：US14963855

申请日：2015-12-09

Applicant: Infineon Technologies AG

Inventor： Reinhard Ploss ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: H01L29/12 ,  H01L21/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/261 ,  H01L21/263 ,  H01L29/36 ,  H01L29/66 ,  H01L29/78 ,  H01L29/32 ,  H01L29/739 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L22/20 ,  H01L21/261 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/7813 ,  H01L29/8611 ,  H01L29/872

Abstract: A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, and a temperature of the thermal process.

Abstract translation: 公开了一种用于处理具有基本掺杂的半导体晶片的方法。 该方法包括确定基本掺杂的掺杂浓度，以及通过后掺杂来适应半导体晶片的基本掺杂。 后掺杂包括以下方法中的至少一种：质子注入和随后的用于产生氢诱导供体的热处理。 在这种情况下，以下参数中的至少一个取决于所确定的碱性掺杂的掺杂浓度：质子注入的注入剂量和热处理的温度。

公开(公告)号：US09384960B2

公开(公告)日：2016-07-05

申请号：US14824339

申请日：2015-08-12

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Susiti ,  Markus Zundel ,  Reinhard Ploss

IPC: H01L21/336 ,  H01L21/02 ,  H01L21/3115 ,  H01L23/29 ,  H01L23/31 ,  H01L29/10 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/02321 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/3115 ,  H01L21/31155 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/06 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.

Abstract translation: 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。

公开(公告)号：US20140291816A1

公开(公告)日：2014-10-02

申请号：US14305359

申请日：2014-06-16

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Susiti ,  Markus Zundel ,  Reinhard Ploss

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L29/7813 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/02321 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/3115 ,  H01L21/31155 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/06 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.

Abstract translation: 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。