公开(公告)号：US09281463B2

公开(公告)日：2016-03-08

申请号：US14138656

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach

IPC: H01L39/24

CPC classification number: H01L39/2493

Abstract: Metal oxide tunnel barrier layers for superconducting tunnel junctions are formed by atomic layer deposition. Both precursors include a metal (which may be the same metal or may be different). The first precursor is a metal alkoxide with oxygen bonded to the metal, and the second precursor is an oxygen-free metal precursor with an alkyl-reactive ligand such as a halogen or methyl group. The alkyl-reactive ligand reacts with the alkyl group of the alkoxide, forming a detached by-product and leaving a metal oxide monolayer. The temperature is selected to promote the reaction without causing the metal alkoxide to self-decompose. The oxygen in the alkoxide precursor is bonded to a metal before entering the chamber and remains bonded throughout the reaction that forms the monolayer. Therefore, the oxygen used in this process has no opportunity to oxidize the underlying superconducting electrode.

公开(公告)号：US09245793B2

公开(公告)日：2016-01-26

申请号：US14135182

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Frank Greer ,  Chi-I Lang ,  J. Watanabe ,  Wenxian Zhu

IPC: H01L21/31 ,  H01L21/768 ,  H01L21/3105 ,  H01J37/32

CPC classification number: H01L21/76841 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活化物质。 活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

公开(公告)号：US09224594B2

公开(公告)日：2015-12-29

申请号：US14083124

申请日：2013-11-18

Applicant: Intermolecular Inc.

Inventor： Kevin Kashefi ,  Frank Greer

IPC: H01L21/314 ,  H01L21/02 ,  H01L29/51

CPC classification number: H01L21/02304 ,  H01L21/02046 ,  H01L21/02181 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/28194 ,  H01L29/517

Abstract: Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface.

Abstract translation: 公开了使用等离子体源处理半导体表面的方法和装置。 该装置包括封闭衬底支撑件的外部真空室，等离子体源（直接等离子体或远程等离子体）和可选的喷头。 也可以使用其他气体分配和气体分散硬件。 等离子体源可用于产生可操作以改变半导体材料的表面的活化物质。 此外，等离子体源可以用于产生可操作以增强半导体表面上的沉积前体的成核的活化物质。

公开(公告)号：US20150179916A1

公开(公告)日：2015-06-25

申请号：US14137640

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Dipankar Pramanik ,  Frank Greer ,  Andrew Steinbach

IPC: H01L39/24 ,  C23C14/08 ,  H01L39/22 ,  C23C16/455 ,  C23C14/34

CPC classification number: H01L39/2493 ,  C23C14/083 ,  C23C14/34 ,  C23C16/45525 ,  H01L39/223

Abstract: A tunnel barrier layer in a superconducting device, such as a Josephson junction, is made from catalytically grown silicon dioxide at a low temperature (

Abstract translation: 在超导装置（例如约瑟夫逊结）中的隧道阻挡层由催化生长的二氧化硅在低温（<100℃，例如20-30℃）下制成，其不容易在超导电极处形成氧化或硅化物 接口。 隧道势垒开始于沉积在超导电极上并被薄的氧可渗透催化层覆盖的硅层。 氧气在与催化层接触时解离，所得到的氧原子通过催化层，氧化下面的硅。 当所有硅转化为二氧化硅时，反应自限制。

公开(公告)号：US20150179509A1

公开(公告)日：2015-06-25

申请号：US14135182

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Frank Greer ,  Chi-I Lang ,  J. Watanabe ,  Wenxian Zhu

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76841 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活化物质。 活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

公开(公告)号：US20150035085A1

公开(公告)日：2015-02-05

申请号：US14109728

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Khaled Ahmed ,  Frank Greer

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/02181 ,  C23C16/405 ,  C23C16/45531 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments provided herein describe high-k dielectric layers and methods for forming high-k dielectric layers. A substrate is provided. The substrate includes a semiconductor material. The substrate is exposed to a hafnium precursor. The substrate is exposed to a zirconium precursor. The substrate is exposed to an oxidant only after the exposing of the substrate to the hafnium precursor and the exposing of the substrate to the zirconium precursor. The exposing of the substrate to the hafnium precursor, the exposing of the substrate to the zirconium precursor, and the exposing of the substrate to the oxidant causes a layer to be formed over the substrate. The layer includes hafnium, zirconium, and oxygen.

Abstract translation: 本文提供的实施例描述了高k电介质层和用于形成高k电介质层的方法。 提供基板。 基板包括半导体材料。 将基底暴露于铪前体。 将基底暴露于锆前体。 只有在将基底暴露于铪前体并将基底暴露于锆前体之后，才将基底暴露于氧化剂。 将衬底暴露于铪前体，将衬底暴露于锆前体，以及将衬底暴露于氧化剂引起在衬底上形成一层。 该层包括铪，锆和氧。

公开(公告)号：US20160133819A1

公开(公告)日：2016-05-12

申请号：US14982285

申请日：2015-12-29

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Ashish Bodke

IPC: H01L39/02 ,  C23C16/513 ,  C23C16/24 ,  H01L39/24 ,  H01L39/12

CPC classification number: C23C16/513 ,  C23C16/24 ,  H01L21/02131 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76891 ,  H01L23/53285 ,  H01L23/5329 ,  H01L27/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are superconducting circuits and methods of forming such circuits. A circuit may include a silicon containing low loss dielectric (LLD) layer formed by fluorine passivation of dangling bonds of silicon atoms in the layer. The LLD layer may be formed from silicon nitride or silicon oxide. For uniform passivation (e.g., uniform distribution of fluorine within the LLD layer), fluorine may be introduced while forming the LLD layer. For example, a fluorine containing precursor may be supplied into a deposition chamber together with a silicon containing precursor. Alternatively, the LLD layer may be formed as a stack of many thin sublayers, and each sublayer may be subjected to individual fluorine passivation. For example, low power plasma treatment or annealing in a fluorine containing environment may be used for this purpose. The concentration of fluorine in the LLD layer may be between about 0.5% atomic and 5% atomic.

Abstract translation: 提供了形成这种电路的超导电路和方法。 电路可以包括通过氟层钝化层中的硅原子的悬挂键形成的含硅低损耗介电层（LLD）层。 LLD层可以由氮化硅或氧化硅形成。 为了均匀钝化（例如，在LLD层内氟的均匀分布），可以在形成LLD层的同时引入氟。 例如，可以将含氟前体与含硅前体一起供入沉积室。 或者，LLD层可以形成为许多薄亚层的堆叠，并且每个子层可以经受单独的氟钝化。 例如，为了这个目的，可以使用含氟环境中的低功率等离子体处理或退火。 LLD层中氟的浓度可以在约0.5％的原子和5％的原子之间。

公开(公告)号：US09324767B1

公开(公告)日：2016-04-26

申请号：US14145410

申请日：2013-12-31

Applicant: Intermolecular, Inc.

Inventor： Andrew Steinbach ,  Tony Bonetti ,  Frank Greer ,  Kurt Pang ,  Yun Wang

IPC: H01L29/06 ,  H01L27/18 ,  H01L23/532

CPC classification number: H01L27/18 ,  H01L23/53276 ,  H01L39/223 ,  H01L39/2493 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are superconducting tunnel junctions, such as Josephson tunnel junctions, and a method of fabricating thereof. A junction includes an insulator disposed between two superconductors. The junction may also include one or two interface layers, with each interface layer disposed between the insulator and one of the superconductors. The interface layer is configured to prevent oxygen from entering the adjacent superconductor during fabrication and operation of the junction. Furthermore, the interface layer may protect the insulator from the environment during handling and processing of the junction, thereby allowing vacuum breaks after the interface layer is formed as well as new integration schemes, such as depositing a dielectric layer and forming a trench in the dielectric layer for the second superconductor. In some embodiments, the junction may be annealed during its fabrication to move oxygen from the superconductors and/or from the insulator into the one or two interface layers.

Abstract translation: 提供了超导隧道结，例如约瑟夫逊隧道结，及其制造方法。 接合部包括设置在两个超导体之间的绝缘体。 接合部还可以包括一个或两个界面层，每个界面层设置在绝缘体和超导体之一之间。 接口层被配置为在结的制造和操作期间防止氧气进入相邻的超导体。 此外，接口层可以在接合处理和处理期间保护绝缘体免受环境影响，从而在形成界面层之后允许真空断裂以及新的集成方案，例如沉积电介质层并在电介质中形成沟槽 第二超导体层。 在一些实施例中，接头可以在其制造期间被退火以将氧从超导体和/或从绝缘体移动到一个或两个界面层中。

公开(公告)号：US09224783B2

公开(公告)日：2015-12-29

申请号：US14139222

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach ,  Wenxian Zhu

IPC: H01L21/31 ,  H01L21/469 ,  H01L27/18 ,  H01L39/24

CPC classification number: H01L27/18 ,  H01L39/2493

Abstract: Defects in hydrogenated amorphous silicon are reduced by low-energy ion treatments and optional annealing. The treatments leave strongly-bonded hydrogen and other passivants in place, but increase the mobility of loosely-bonded and interstitially trapped hydrogen that would otherwise form unwanted two-level systems (TLS). The mobilized hydrogen atoms may be attracted to unused passivation sites or recombined into H2 gas and diffuse out of the deposited layer. The treatments also increase the density of the material. The optional anneal may partially crystallize the layer, further densify the layer, or both. The reduced number of defects and the increased crystallinity reduce the loss tangent of amorphous silicon dielectrics for superconducting microwave devices.

Abstract translation: 通过低能离子处理和任选的退火，氢化非晶硅中的缺陷被减少。 这些处理方法使氢键和其他钝化剂存在一定的位置，但会增加松散键合和间隙捕获的氢气的流动性，否则其将形成不需要的两级系统（TLS）。 活化的氢原子可以被吸引到未使用的钝化位点或重新组合成H 2气体并扩散出沉积层。 治疗也增加了材料的密度。 可选择的退火可以部分地使层结晶，进一步使该层致密，或者两者都致密。 减少的缺陷数量和增加的结晶度降低了用于超导微波器件的非晶硅电介质的损耗角正切。

公开(公告)号：US09076651B1

公开(公告)日：2015-07-07

申请号：US14136271

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Khaled Ahmed ,  Frank Greer ,  Raj Jammy

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/02 ,  H01L29/40

CPC classification number: H01L21/02301 ,  C23C16/0227 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/0485 ,  H01L29/66068 ,  H01L29/78

Abstract: SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A dielectric interface layer is deposited in-situ to passivate the surface. Metal layers having a low work function are deposited above the dielectric interface layer. The stack is annealed at about 500C in forming gas to form low resistivity ohmic contacts to the SiC substrate. SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A silicon oxide dielectric interface layer is deposited in-situ to passivate the surface. Optional plasma surface treatments are applied to further improve the performance of the silicon oxide dielectric interface layer. An aluminum oxide gate dielectric layer is deposited above the silicon oxide dielectric interface layer.

Abstract translation: 将SiC衬底清洁并提供给处理室。 施加原位等离子体表面处理以进一步清洁基底的表面。 电介质界面层原位沉积以钝化表面。 具有低功函数的金属层沉积在电介质界面层的上方。 堆叠在大约500℃下在形成气体中退火以形成到SiC衬底的低电阻率欧姆接触。 将SiC衬底清洁并提供给处理室。 施加原位等离子体表面处理以进一步清洁基底的表面。 氧化硅介电界面层原位沉积以钝化表面。 施加可选的等离子体表面处理以进一步提高氧化硅介电界面层的性能。 在氧化硅介电界面层上沉积氧化铝栅极电介质层。