公开(公告)号：US09590054B2

公开(公告)日：2017-03-07

申请号：US15001285

申请日：2016-01-20

申请人： International Business Machines Corporation

发明人： Kevin K. Chan ,  Alfred Grill ,  Deborah A. Neumayer ,  Dae-Gyu Park ,  Norma E. Sosa ,  Min Yang

IPC分类号： H01L21/8238 ,  H01L29/40 ,  H01L29/51 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/408 ,  H01L21/823468 ,  H01L29/4983 ,  H01L29/518 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Embodiments of the present invention provide semiconductor structures and methods for making the same that include a boron nitride (BN) spacer on a gate stack, such as a gate stack of a planar FET or FinFET. The boron nitride spacer is fabricated using atomic layer deposition (ALD) and/or plasma enhanced atomic layer deposition (PEALD) techniques to produce a boron nitride spacer at relatively low temperatures that are conducive to devices made from materials such as silicon (Si), silicon germanium (SiGe), germanium (Ge), and/or III-V compounds. Furthermore, the boron nitride spacer may be fabricated to have various desirable properties, including a hexagonal textured structure.

摘要翻译： 本发明的实施例提供半导体结构及其制造方法，其包括在诸如平面FET或FinFET的栅堆叠的栅叠层上的氮化硼（BN）间隔物。 使用原子层沉积（ALD）和/或等离子体增强原子层沉积（PEALD）技术来制造氮化硼间隔物，以在相对低的温度下产生氮化硼间隔物，这有利于由诸如硅（Si）， 硅锗（SiGe），锗（Ge）和/或III-V化合物。 此外，可以制造氮化硼间隔物以具有各种期望的性质，包括六边形纹理结构。

公开(公告)号：US09515252B1

公开(公告)日：2016-12-06

申请号：US14983015

申请日：2015-12-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Samsung Electronics Co., Ltd.

发明人： Anthony J. Annunziata ,  Chandrasekaran Kothandaraman ,  Gen P. Lauer ,  JungHyuk Lee ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Eugene J. O'Sullivan ,  Jeong-Heon Park

IPC分类号： H01L27/00 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1677 ,  H01L27/22 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

摘要： A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.

摘要翻译： 一种制造磁性随机存取存储器（MRAM）装置的方法，包括在电极上形成磁性隧道结，所述磁性隧道结包括第一参考层，自由层和第一隧道势垒层; 以及在所述磁性隧道结的侧壁上并沿着所述磁性隧道结的侧壁沉积封装的氮化硅膜; 其中氮化硅膜具有0.1:1的N:Si比率。还公开了通过上述方法制造的MRAM器件。

公开(公告)号：US20160141377A1

公开(公告)日：2016-05-19

申请号：US15001285

申请日：2016-01-20

申请人： International Business Machines Corporation

发明人： Kevin K. Chan ,  Alfred Grill ,  Deborah A. Neumayer ,  Dae-Gyu Park ,  Norma E. Sosa ,  Min Yang

IPC分类号： H01L29/40 ,  H01L29/51

CPC分类号： H01L29/408 ,  H01L21/823468 ,  H01L29/4983 ,  H01L29/518 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Embodiments of the present invention provide semiconductor structures and methods for making the same that include a boron nitride (BN) spacer on a gate stack, such as a gate stack of a planar FET or FinFET. The boron nitride spacer is fabricated using atomic layer deposition (ALD) and/or plasma enhanced atomic layer deposition (PEALD) techniques to produce a boron nitride spacer at relatively low temperatures that are conducive to devices made from materials such as silicon (Si), silicon germanium (SiGe), germanium (Ge), and/or III-V compounds. Furthermore, the boron nitride spacer may be fabricated to have various desirable properties, including a hexagonal textured structure.

公开(公告)号：US09231063B2

公开(公告)日：2016-01-05

申请号：US14187742

申请日：2014-02-24

申请人： International Business Machines Corporation

发明人： Alfred Grill ,  Deborah A. Neumayer ,  Kenneth P. Rodbell

IPC分类号： H01L21/70 ,  H01L29/36 ,  H01L27/12

CPC分类号： H01L29/0653 ,  H01L21/02488 ,  H01L21/7624 ,  H01L27/1203 ,  H01L29/0603 ,  H01L29/78603

摘要： A semiconductor-on-insulator (SOI) structure that includes a cap layer composed of a boron-rich compound or doped boron nitride located between a top semiconductor layer and a buried insulator layer is provided. The cap layer forms a conductive path between the top semiconductor layer and the buried insulator layer in the SOI structure to dissipate total ionizing dose (TID) accumulated charges, thus advantageously mitigating TID effects in fully depleted SOI transistors.

公开(公告)号：US20150236115A1

公开(公告)日：2015-08-20

申请号：US14330086

申请日：2014-07-14

申请人： International Business Machines Corporation

发明人： Kevin K. Chan ,  Alfred Grill ,  Deborah A. Neumayer ,  Dae-Gyu Park ,  Norma E. Sosa ,  Min Yang

IPC分类号： H01L29/51

CPC分类号： H01L29/408 ,  H01L21/823468 ,  H01L29/4983 ,  H01L29/518 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Embodiments of the present invention provide semiconductor structures and methods for making the same that include a boron nitride (BN) spacer on a gate stack, such as a gate stack of a planar FET or FinFET. The boron nitride spacer is fabricated using atomic layer deposition (ALD) and/or plasma enhanced atomic layer deposition (PEALD) techniques to produce a boron nitride spacer at relatively low temperatures that are conducive to devices made from materials such as silicon (Si), silicon germanium (SiGe), germanium (Ge), and/or III-V compounds. Furthermore, the boron nitride spacer may be fabricated to have various desirable properties, including a hexagonal textured structure.

摘要翻译： 本发明的实施例提供半导体结构及其制造方法，其包括在诸如平面FET或FinFET的栅堆叠的栅叠层上的氮化硼（BN）间隔物。 使用原子层沉积（ALD）和/或等离子体增强原子层沉积（PEALD）技术来制造氮化硼间隔物，以在相对低的温度下产生氮化硼间隔物，这有利于由诸如硅（Si）， 硅锗（SiGe），锗（Ge）和/或III-V化合物。 此外，可以制造氮化硼间隔物以具有各种期望的性质，包括六边形纹理结构。

公开(公告)号：US20200165494A1

公开(公告)日：2020-05-28

申请号：US16750719

申请日：2020-01-23

申请人： International Business Machines Corporation

发明人： James L. Hedrick ,  Robert D. Miller ,  Deborah A. Neumayer ,  Sampath Purushothaman ,  Mary E. Rothwell ,  Willi Volksen ,  Roy R. Yu

IPC分类号： C09J9/00 ,  H01L23/48 ,  H01L23/00 ,  H01L21/683 ,  H01L21/768 ,  C09J11/04 ,  H01L25/00 ,  H01L25/065 ,  C09J183/04 ,  C09J179/08 ,  C09J179/04 ,  C09J11/06 ,  H01L23/60

摘要： The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

公开(公告)号：US10585060B2

公开(公告)日：2020-03-10

申请号：US15720986

申请日：2017-09-29

申请人： International Business Machines Corporation

发明人： Hariklia Deligianni ,  Bruce B. Doris ,  Damon B. Farmer ,  Steven J. Holmes ,  Qinghuang Lin ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Roy R. Yu

IPC分类号： G01N27/327 ,  G01N33/94 ,  H01L21/768 ,  G01N27/48 ,  H01L23/48 ,  H01L23/528 ,  G01N33/543 ,  H01L27/15 ,  G01N33/487

摘要： Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measureable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measureable electrical parameter to computer elements.

公开(公告)号：US20200020542A1

公开(公告)日：2020-01-16

申请号：US16033384

申请日：2018-07-12

申请人： International Business Machines Corporation

发明人： Kam-Leung Lee ,  Deborah A. Neumayer ,  Son Nguyen ,  Martin M. Frank ,  Vijay Narayanan

IPC分类号： H01L21/324 ,  H01L21/768 ,  H01L21/02 ,  H01L49/02 ,  H01L23/522

摘要： A conformal disposable absorber is disclosed which is capable of providing efficient heat transfer to an embedded memory device during a localized absorber anneal, without adversary impacting the back-end-of-the-line (BEOL) structure. The disposable absorber is composed of an amorphous carbonitride material that can be designed to have a low reflection coefficient for laser/flash illumination, and a high extinction coefficient for efficient laser/flash illumination absorption. The disposable absorber is formed at a temperature of 400° C. or less.

公开(公告)号：US20190101504A1

公开(公告)日：2019-04-04

申请号：US15802802

申请日：2017-11-03

申请人： International Business Machines Corporation

发明人： Hariklia Deligianni ,  Bruce B. Doris ,  Damon B. Farmer ,  Steven J. Holmes ,  Qinghuang Lin ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Roy R. Yu

IPC分类号： G01N27/327 ,  H01L21/768 ,  G01N33/94 ,  G01N27/48

摘要： Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measurable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measurable electrical parameter to computer elements.

公开(公告)号：US20190101503A1

公开(公告)日：2019-04-04

申请号：US15720986

申请日：2017-09-29

申请人： International Business Machines Corporation

发明人： Hariklia Deligianni ,  Bruce B. Doris ,  Damon B. Farmer ,  Steven J. Holmes ,  Qinghuang Lin ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Roy R. Yu

IPC分类号： G01N27/327 ,  H01L23/528 ,  H01L23/48 ,  H01L21/768 ,  G01N27/48 ,  G01N33/94

CPC分类号： G01N27/3277 ,  G01N27/3278 ,  G01N27/48 ,  G01N33/48728 ,  G01N33/5438 ,  G01N33/9413 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L27/153

摘要： Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at hleast in part on the sensor element interacting with a predetermined material, generate data representing a measureable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measureable electrical parameter to computer elements.