公开(公告)号：US20060275977A1

公开(公告)日：2006-12-07

申请号：US11500254

申请日：2006-08-07

申请人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Matthew Copel ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Matthew Copel ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L21/8238

CPC分类号： H01L29/513 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

摘要： A method of forming a CMOS structure, and the device produced therefrom, having improved threshold voltage and flatband voltage stability. The inventive method includes the steps of providing a semiconductor substrate having an nFET region and a pFET region; forming a dielectric stack atop the semiconductor substrate comprising an insulating interlayer atop a high k dielectric; removing the insulating interlayer from the nFET region without removing the insulating interlayer from the pFET region; and providing at least one gate stack in the pFET region and at least one gate stack in the nFET region. The insulating interlayer can be AlN or AlOxNy. The high k dielectric can be HfO2, hafnium silicate or hafnium silicon oxynitride. The insulating interlayer can be removed from the nFET region by a wet etch including a HCl/H2O2 peroxide solution.

公开(公告)号：US20060105515A1

公开(公告)日：2006-05-18

申请号：US11271032

申请日：2005-11-10

申请人： Ricky Amos ,  Douglas Buchanan ,  Cyril Cabral ,  Evgeni Gousev ,  Victor Ku ,  An Steegen

发明人： Ricky Amos ,  Douglas Buchanan ,  Cyril Cabral ,  Evgeni Gousev ,  Victor Ku ,  An Steegen

IPC分类号： H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/76895 ,  H01L21/823835

摘要： Silicide is introduced into the gate region of a CMOS device through different process options for both conventional and replacement gate types processes. Placement of silicide in the gate itself, introduction of the silicide directly in contact with the gate dielectric, introduction of the silicide as a fill on top of a metal gate all ready in place, and introduction the silicide as a capping layer on polysilicon or on the existing metal gate, are presented. Silicide is used as an option to connect between PFET and NFET devices of a CMOS structure. The processes protect the metal gate while allowing for the source and drain silicide to be of a different silicide than the gate silicide. A semiconducting substrate is provided having a gate with a source and a drain region. A gate dielectric layer is deposited on the substrate, along with a metal gate layer. The metal gate layer is then capped with a silicide formed on top of the gate, and conventional formation of the device then proceeds. A second silicide may be employed within the gate. A replacement gate is made from two different metals (dual metal gate replacement) prior to capping with a silicide.

公开(公告)号：US20050269635A1

公开(公告)日：2005-12-08

申请号：US10957342

申请日：2004-10-01

申请人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Matthew Copel ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Matthew Copel ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/513 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

摘要： The present invention provides a semiconductor structure comprising a semiconductor substrate having source and drain diffusion regions located therein, the source and drain diffusion regions being separated by a device channel; and a gate stack located on top of the device channel, the gate stack comprising a high-k gate dielectric, an insulating interlayer and a fully silicided metal gate conductor, the insulating interlayer located between the high-k gate dielectric and the fully silicided metal gate conductor, wherein the insulating interlayer is capable of stabilizing threshold voltage and flatband voltage of the semiconductor structure to a targeted value.

摘要翻译： 本发明提供一种半导体结构，其包括具有位于其中的源极和漏极扩散区域的半导体衬底，源极和漏极扩散区域被器件沟道分离; 以及位于器件沟道顶部的栅极堆叠，栅极堆叠包括高k栅极电介质，绝缘中间层和完全硅化金属栅极导体，位于高k栅极电介质和完全硅化金属之间的绝缘中间层 栅极导体，其中所述绝缘中间层能够将所述半导体结构的阈值电压和平带电压稳定到目标值。

公开(公告)号：US06573197B2

公开(公告)日：2003-06-03

申请号：US09833550

申请日：2001-04-12

申请人： Alessandro C. Callegari ,  Evgeni Gousev ,  Michael A. Gribelyuk ,  Paul C. Jamison ,  Dianne L. Lacey

发明人： Alessandro C. Callegari ,  Evgeni Gousev ,  Michael A. Gribelyuk ,  Paul C. Jamison ,  Dianne L. Lacey

IPC分类号： H01L2131

CPC分类号： H01L21/02304 ,  C23C16/24 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/0223 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/28035 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/31604 ,  H01L28/60 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention provides a method of fabricating a thermally stable polysilicon/high-k dielectric film stack utilizing a deposition method wherein Si-containing precursor gas which includes silicon and hydrogen is diluted with an inert gas such as He so as to significantly reduce the hydrogen content in the resultant polysilicon film. Semiconductor structures such as field effect transistors (FETs) and capacitors which include at least the thermally stable polysilicon/high-k dielectric film stack are also provided herein.

公开(公告)号：US06287897B1

公开(公告)日：2001-09-11

申请号：US09515109

申请日：2000-02-29

申请人： Evgeni Gousev ,  Kai Chen ,  Asit Kumar Ray

发明人： Evgeni Gousev ,  Kai Chen ,  Asit Kumar Ray

IPC分类号： H01L21335

CPC分类号： H01L21/28194 ,  H01L21/28176 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method for forming a semiconductor device comprising forming a dielectric layer on an area of a silicon substrate; implanting nitrogen atoms into said dielectric layer; forming a conductive layer of polysilicon over said dielectric layer; annealing the dielectric layer to drive the nitrogen atoms to form a gate dielectric of a dielectric layer having silicon nitride layer interfaces of the dielectric layer and the silicon substrate and the polysilicon layers; and, forming a gate structure in said polysilicon layer and source/drain regions in said silicon substrate, said source/drain regions aligned with said gate structure.

摘要翻译： 一种形成半导体器件的方法，包括在硅衬底的区域上形成电介质层; 将氮原子注入所述介电层中; 在所述介​​电层上形成多晶硅的导电层; 对介电层进行退火以驱动氮原子以形成具有介电层和硅衬底以及多晶硅层的具有氮化硅层界面的电介质层的栅极电介质; 并且在所述硅衬底的所述多晶硅层和源极/漏极区域中形成栅极结构，所述源极/漏极区域与所述栅极结构对准。

公开(公告)号：US08222066B2

公开(公告)日：2012-07-17

申请号：US12061592

申请日：2008-04-02

申请人： Thanh Nghia Tu ,  Qi Luo ,  Chia Wei Yang ,  David Heald ,  Evgeni Gousev ,  Chih-Wei Chiang

发明人： Thanh Nghia Tu ,  Qi Luo ,  Chia Wei Yang ,  David Heald ,  Evgeni Gousev ,  Chih-Wei Chiang

IPC分类号： H01L21/00

CPC分类号： B81C1/00476 ,  B81B2201/047

摘要： Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.

摘要翻译： 描述制造微机电系统（MEMS）装置的方法。 在一些实施例中，该方法包括在衬底上形成牺牲层，处理牺牲层的至少一部分以形成经处理的牺牲部分，在经处理的牺牲部分的至少一部分上形成覆盖层，并且至少部分地 去除经处理的牺牲部分以形成位于衬底和上覆层之间的空腔，上覆层暴露于空腔。

公开(公告)号：US20120075313A1

公开(公告)日：2012-03-29

申请号：US13314448

申请日：2011-12-08

申请人： Evgeni Gousev ,  Gang Xu ,  Marek Mienko

发明人： Evgeni Gousev ,  Gang Xu ,  Marek Mienko

IPC分类号： G06T1/00 ,  B05D5/06 ,  B05D5/12 ,  G02B26/00

CPC分类号： G02B26/001 ,  Y10T29/49124

摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.

摘要翻译： 通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。 一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层 牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。 合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

公开(公告)号：US08077379B2

公开(公告)日：2011-12-13

申请号：US12634576

申请日：2009-12-09

申请人： Evgeni Gousev ,  Gang Xu ,  Marek Mienko

发明人： Evgeni Gousev ,  Gang Xu ,  Marek Mienko

IPC分类号： G02B26/00 ,  G02B26/08 ,  G02F1/29

CPC分类号： G02B26/001 ,  Y10T29/49124

摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.

摘要翻译： 通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。 一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层 牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。 合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

公开(公告)号：US20100219155A1

公开(公告)日：2010-09-02

申请号：US12527864

申请日：2008-02-18

申请人： Khurshid Syed Alam ,  Evgeni Gousev ,  Marc Maurice Mignard ,  David Heald ,  Ana R. Londergan ,  Philip Don Floyd

发明人： Khurshid Syed Alam ,  Evgeni Gousev ,  Marc Maurice Mignard ,  David Heald ,  Ana R. Londergan ,  Philip Don Floyd

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01L21/67069 ,  B81B2201/047 ,  B81C1/00531

摘要： Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in proximity to the etching head in a manner that defines a flow path substantially parallel to the substrate face, and permits relative motion for the etching head to scan across the substrate.

摘要翻译： 本文公开了蚀刻设备和方法，用于从永久MEMS结构之间更有效地蚀刻牺牲材料。 蚀刻头包括细长的蚀刻剂入口结构，其可以是槽形的或入口孔的细长分布。 衬底以限定基本上平行于衬底面的流动路径的方式支撑在蚀刻头附近，并且允许蚀刻头相对于衬底扫描的相对运动。

公开(公告)号：US07738158B2

公开(公告)日：2010-06-15

申请号：US12163660

申请日：2008-06-27

申请人： Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

发明人： Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

IPC分类号： G02B26/00 ,  G02F1/03

CPC分类号： B81C1/0092 ,  B81B3/0005 ,  B81B2201/047 ,  B81C2201/112 ,  G02B26/001

摘要： Methods, devices, and systems provide MEMS devices exhibiting at least one of reduced stiction, reduced hydrophilicity, or reduced variability of certain electrical characteristics using MEMS devices treated with water vapor. The treatment is believed to form one or more passivated surfaces on the interior and/or exterior of the MEMS devices. Relatively gentle temperature and pressure conditions ensure modification of surface chemistry without excessive water absorption after removal of sacrificial material to release the MEMS devices.

摘要翻译： 方法，装置和系统提供使用用水蒸汽处理的MEMS装置展现降低的静摩擦，降低的亲水性或某些电气特性的变化性中的至少一个的MEMS装置。 认为处理在MEMS器件的内部和/或外部形成一个或多个钝化表面。 相对温和的温度和压力条件确保在去除牺牲材料以释放MEMS器件之后，不改变表面化学性质而不过度吸水。