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    METHODS AND SYSTEMS FOR ACCESSING DIGITAL IMAGE FILES
    11.
    发明申请
    METHODS AND SYSTEMS FOR ACCESSING DIGITAL IMAGE FILES 审中-公开
    用于访问数字图像文件的方法和系统

    公开(公告)号：US20070112725A1

    公开(公告)日：2007-05-17

    申请号：US11560311

    申请日：2006-11-15

    Applicant: Jing Lin ,  Chao Tsai

    Inventor： Jing Lin ,  Chao Tsai

    IPC: G06F17/30

    CPC classification number: G06F21/10 ,  G06F16/51

    Abstract: A method for accessing digital image files. The method is applied in a digital image capture device store at least one image file. At least one first image is chosen from the at least one image file. A file level code is set in the at least one first image, and the file level code indicates access authority of the at least one first image file. When the at least one first image is accessed, a second image file is chosen from the at least one first image file. The file level code of the second image file is read, and then the second image file is processed according to the file level code.

    Abstract translation: 一种访问数字图像文件的方法。 该方法应用于数字图像捕获设备中以存储至少一个图像文件。 从至少一个图像文件中选择至少一个第一图像。 在所述至少一个第一图像中设置文件级代码，并且所述文件级代码指示所述至少一个第一图像文件的访问权限。 当访问至少一个第一图像时，从至少一个第一图像文件中选择第二图像文件。 读取第二图像文件的文件级代码，然后根据文件级代码处理第二图像文件。

    Antihistamine formulations for soft capsule dosage forms
    12.
    发明授权
    Antihistamine formulations for soft capsule dosage forms 有权
    软胶囊剂型的抗组胺药物

    公开(公告)号：US07201921B2

    公开(公告)日：2007-04-10

    申请号：US10384868

    申请日：2003-03-10

    Applicant: Jing Lin ,  Hung Truong

    Inventor： Jing Lin ,  Hung Truong

    IPC: A61K9/66 ,  A61K9/48

    CPC classification number: A61K47/12 ,  A61K9/4808 ,  A61K31/4545

    Abstract: The invention herein relates to a pharmaceutical composition containing loratadine and derivatives thereof which is suitable for use in soft capsule dosage forms. A pharmaceutical composition according to the invention comprises loratadine and derivatives thereof in a pharmaceutically effective amount; and a solvent system comprising a mixture of medium chain fatty acids. The loratadine compositions exhibit good solubility and storage stability while maintaining bioavailability of the drug. The compositions also permit high concentrations of solubilized loratadine per total fill volume and thereby permit the use of smaller capsules to deliver the same dosage of drug.

    Abstract translation: 本发明涉及含有氯雷他定及其衍生物的药物组合物，其适用于软胶囊剂型。 根据本发明的药物组合物含有药学有效量的氯雷他定及其衍生物; 和包含中链脂肪酸的混合物的溶剂体系。 氯雷他定组合物在保持药物的生物利用度方面表现出良好的溶解性和储存稳定性。 组合物还允许每个总填充体积溶解的氯雷他定的高浓度，从而允许使用较小的胶囊来递送相同剂量的药物。

    Temperature controlled lid assembly for tungsten nitride deposition
    15.
    发明授权
    Temperature controlled lid assembly for tungsten nitride deposition 有权
    用于氮化钨沉积的温度控制盖组件

    公开(公告)号：US08821637B2

    公开(公告)日：2014-09-02

    申请号：US12021825

    申请日：2008-01-29

    Applicant: Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    Inventor： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    IPC: C23C16/455 ,  C23C16/00

    CPC classification number: C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

    Abstract: Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

    Abstract translation: 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

    Methods for characterizing antibody binding affinity and epitope diversity in food allergy
    16.
    发明授权
    Methods for characterizing antibody binding affinity and epitope diversity in food allergy 有权
    表征食物过敏中抗体结合亲和力和表位多样性的方法

    公开(公告)号：US08802375B2

    公开(公告)日：2014-08-12

    申请号：US12880841

    申请日：2010-09-13

    Applicant: Hugh A. Sampson ,  Jing Lin ,  Ludmilla Bardina

    Inventor： Hugh A. Sampson ,  Jing Lin ,  Ludmilla Bardina

    IPC: G01N33/00 ,  G01N33/53

    CPC classification number: G01N33/6854 ,  G01N2333/4731 ,  G01N2800/24

    Abstract: Methods for performing epitope mapping, and for characterizing the antibody binding affinity and epitope diversity of antibodies in a sample using peptide microarray are provided. In some aspects, methods are provided for the specific characterization of IgE and IgG4. Also disclosed are methods for diagnosing whether a milk-allergic individual will outgrow his or her allergy based on the characterization of the individual's milk allergen-specific IgE antibodies.

    Abstract translation: 提供了使用肽微阵列进行表位作图和用于表征样品中抗体结合亲和力和抗体表位多样性的方法。 在一些方面，提供了用于IgE和IgG4的特异性表征的方法。 还公开了用于基于个体的牛奶变应原特异性IgE抗体的表征来诊断乳过敏个体是否会超过他或她的过敏的方法。

    Semiconductor device and manufacturing method thereof
    17.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08587026B2

    公开(公告)日：2013-11-19

    申请号：US13313979

    申请日：2011-12-07

    Applicant: Yonggen He ,  Huojin Tu ,  Jing Lin

    Inventor： Yonggen He ,  Huojin Tu ,  Jing Lin

    IPC: H01L21/02

    CPC classification number: H01L29/161 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66636 ,  H01L29/7848

    Abstract: This invention relates to a semiconductor device and a manufacturing method therefor for reducing stacking faults caused by high content of Ge in an embedded SiGe structure. The semiconductor device comprises a Si substrate with a recess formed therein. A SiGe seed layer is formed on sidewalls of the recess, and a first SiGe layer having a Ge content gradually increased from bottom to top is formed on the recess bottom. A second SiGe layer having a constant content of Ge is formed on the first SiGe layer. The thickness of the first SiGe layer is less than the depth of the recess. The Ge content in the SiGe seed layer is less than the Ge content in the second SiGe layer, and the Ge content at the upper surface of the first SiGe layer is less than or equal to the Ge content in the second SiGe layer.

    Abstract translation: 本发明涉及一种半导体器件及其制造方法，用于减少嵌入式SiGe结构中Ge含量高的堆垛层错。 半导体器件包括其中形成有凹部的Si衬底。 在凹槽的侧壁上形成SiGe种子层，并且在凹部底部形成具有从底部到顶部逐渐增加的Ge含量的第一SiGe层。 在第一SiGe层上形成具有恒定Ge含量的第二SiGe层。 第一SiGe层的厚度小于凹槽的深度。 SiGe种子层中的Ge含量小于第二SiGe层中的Ge含量，并且第一SiGe层的上表面处的Ge含量小于或等于第二SiGe层中的Ge含量。

    Control markers for auto-detection of control solution and method of use
    18.
    发明授权
    Control markers for auto-detection of control solution and method of use 有权
    用于自动检测对照溶液的控制标记和使用方法

    公开(公告)号：US08337691B2

    公开(公告)日：2012-12-25

    申请号：US12316133

    申请日：2008-12-10

    Applicant: Jing Lin ,  Fu Hsiung Tsai ,  Huan-Ping Wu ,  Nicole D. Ellis ,  Henry C. Arndt

    Inventor： Jing Lin ,  Fu Hsiung Tsai ,  Huan-Ping Wu ,  Nicole D. Ellis ,  Henry C. Arndt

    IPC: G01N27/327 ,  G01N33/96

    CPC classification number: G01N27/26 ,  C12Q1/001 ,  G01N27/327 ,  G01N27/3274 ,  G01N33/66 ,  G01N33/96 ,  G01N2496/00 ,  Y10T436/10 ,  Y10T436/104998 ,  Y10T436/13 ,  Y10T436/144444

    Abstract: A method of distinguishing a control solution from a sample in an electrochemical test sensor is performed. The method includes adding a control marker to the control solution. The control solution includes the control marker and analyte. The test sensor includes working and counter electrodes, and a reagent. A potential is applied to the test sensor to oxidize the control marker and the analyte. The resulting electrical current is measured. A potential is applied to the test sensor lower than the other potential in which the potential is sufficient to oxidize the analyte and not the control marker. The resulting electrical current is measured. Determining whether a control solution or a sample is present based on the measured electrical currents. To increase the measured current, a salt may be added to the control solution in an amount sufficient to increase the electrical current by at least 5% as compared to a control solution in the absence of a salt.

    Abstract translation: 执行在电化学测试传感器中区分对照溶液与样品的方法。 该方法包括向对照溶液中加入对照标记物。 对照溶液包括对照标记物和分析物。 测试传感器包括工作和对电极以及试剂。 对测试传感器施加电位以氧化对照标记物和分析物。 测量所得的电流。 将电位施加到测试传感器的低于其中电位足以氧化分析物而不是对照标记的其他电位。 测量所得的电流。 基于测量的电流确定是否存在对照溶液或样品。 为了增加所测量的电流，与对照溶液相比，在不存在盐的情况下，盐可以以足以将电流增加至少5％的量加入到对照溶液中。

    Vapor deposition of tungsten materials
    19.
    发明授权
    Vapor deposition of tungsten materials 失效
    钨材料的蒸气沉积

    公开(公告)号：US07732327B2

    公开(公告)日：2010-06-08

    申请号：US12239046

    申请日：2008-09-26

    Applicant: Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

    Inventor： Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

    IPC: H01L21/4763

    CPC classification number: C23C16/42 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

    Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用浸泡方法和气相沉积方法提供具有显着改善的表面均匀性的钨膜，同时提高生产水平的生产量。 在一个实施例中，提供了一种方法，其包括通过将衬底暴露于硅前体的连续流中而在衬底上沉积钨硅化物层，同时将衬底暴露于钨前体的间歇脉冲。 该方法还提供了将硅衬底暴露于硅/钨前体流速比大于1，例如约2，约3或更大的硅和钨前体。 随后，该方法提供在硅化钨层上沉积氮化钨层，在钨氮化物层上沉积钨成核层，并在钨成核层上沉积钨体层。

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