公开(公告)号：US20160365501A1

公开(公告)日：2016-12-15

申请号：US15158158

申请日：2016-05-18

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun KANG ,  Seok Jin YOON ,  Jin Sang KIM ,  Ji-Won CHOI ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Woo-Suk JUNG ,  Beomjin KWON

IPC: H01L41/053 ,  H01L41/18 ,  H01L41/113

CPC classification number: H01L41/113

Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2  d 2  ( d 1 + d 2 ) 2  ( E 1  d 1 + E 2  d 2 ) , y 2 = E 1  d 1  ( d 1 + d 2 ) 2  ( E 1  d 1 + E 2  d 2 )   and Equation   1 y 1 = E 2  A 2  ( A 1 + A 2 ) 2  ( E 1  A 1 + E 2  A 2 ) , y 2 = E 1  A 1  ( A 1 + A 2 ) 2  ( E 1  A 1 + E 2  A 2 ) . Equation   2

公开(公告)号：US20240180043A1

公开(公告)日：2024-05-30

申请号：US18511720

申请日：2023-11-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Min Seok KIM ,  Ji-Soo JANG ,  Sunghoon HUR ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG

IPC: H10N39/00

CPC classification number: H10N39/00

Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.

公开(公告)号：US20230010061A1

公开(公告)日：2023-01-12

申请号：US17839207

申请日：2022-06-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SEUNG HYUB BAEK ,  RUIGUANG NING ,  Jae-Hoon HAN ,  Byung Chul LEE ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  CHONG YUN KANG ,  Ji-Won CHOI ,  JIN SANG KIM

IPC: H01L41/313 ,  H01L41/08 ,  H01L41/187

Abstract: A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.

公开(公告)号：US20220086961A1

公开(公告)日：2022-03-17

申请号：US17475346

申请日：2021-09-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Hyun-Cheol SONG ,  Jungho YOON ,  Joohee JANG

IPC: H05B3/86 ,  C23C14/08 ,  C23C14/24 ,  H05B3/14

Abstract: The present disclosure provides a transparent thin film heater including: a metal layer; and a transparent conductive oxide layer, wherein the transparent conductive oxide layer includes a composition represented by the following Chemical Formula 1 and is doped with nitrogen: ZnxSn1−xO2  [Chemical Formula 1] wherein 0

公开(公告)号：US20210167352A1

公开(公告)日：2021-06-03

申请号：US16952087

申请日：2020-11-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Hyun-Cheol SONG ,  Sang Tae KIM ,  Hyun Seok LEE

IPC: H01M4/04 ,  H01M10/052 ,  H01M4/58

Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]: SiNx   [Chemical Formula 1] (wherein 0

公开(公告)号：US20190033618A1

公开(公告)日：2019-01-31

申请号：US16044510

申请日：2018-07-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Yong-Won SONG ,  Hyunjung YI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seong Keun KIM ,  Seung Hyub BAEK ,  Sang Tae KIM ,  Hyun Seok LEE

IPC: G02C7/04 ,  H01M10/0562 ,  H02J50/10 ,  H01M4/64

Abstract: Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

公开(公告)号：US20180247941A1

公开(公告)日：2018-08-30

申请号：US15648770

申请日：2017-07-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun KIM ,  Jung Joon PYEON ,  Cheol Jin CHO ,  Sangtae KIM ,  Doo Seok JEONG ,  Seung-Hyub BAEK ,  Chong-Yun KANG ,  Ji-Won CHOI ,  Jin-Sang KIM

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01L27/10808 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28556 ,  H01L28/75

Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Ir).

公开(公告)号：US20160133917A1

公开(公告)日：2016-05-12

申请号：US14802715

申请日：2015-07-17

Applicant: Korea Institute of Science and Technology

Inventor： Ji-Won CHOI ,  Seok Jin YOON ,  Jin Sang KIM ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Beomjin KWON ,  Haena YIM

IPC: H01M4/04 ,  H01M10/659 ,  H01M4/58 ,  H01M10/04 ,  H01M4/525 ,  H01M4/505

CPC classification number: H01M4/0402 ,  H01M4/0404 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/058 ,  H01M10/659

Abstract: A method of fabricating a cathode for a thin film battery includes depositing a cathode active material on a substrate, and crystallizing the cathode active material by irradiating laser onto the cathode active material. The cathode active material may be deposited on the substrate at normal temperature, and a light and easily processable polymer substrate may be used by crystallizing the cathode active material at low temperature using laser. A thin film battery including the cathode fabricated by the above method has excellent charging/discharging characteristics such as high discharge capacity.

Abstract translation: 一种薄膜电池用阴极的制造方法，其特征在于，在基板上沉积正极活性物质，通过在正极活性物质上照射激光来使阴极活性物质结晶化。 阴极活性材料可以在常温下沉积在基板上，并且可以通过使用激光在低温下使阴极活性材料结晶来使用轻且容易加工的聚合物基底。 包括通过上述方法制造的阴极的薄膜电池具有优异的充电/放电特性，例如高放电容量。