公开(公告)号：US07393470B2

公开(公告)日：2008-07-01

申请号：US11090393

申请日：2005-03-25

申请人： Masaru Ihara ,  Yoshifumi Suehiro ,  Yasumasa Morita ,  Kiyoshi Inaba ,  Toshio Shimizu ,  Osamu Iwamoto ,  Tomoyuki Mikuriya ,  Ryuichiro Kajiyama ,  Ken-ichiro Fujimoto ,  Yasuhiro Onishi

发明人： Masaru Ihara ,  Yoshifumi Suehiro ,  Yasumasa Morita ,  Kiyoshi Inaba ,  Toshio Shimizu ,  Osamu Iwamoto ,  Tomoyuki Mikuriya ,  Ryuichiro Kajiyama ,  Ken-ichiro Fujimoto ,  Yasuhiro Onishi

IPC分类号： C01B3/26

CPC分类号： C10G2/32 ,  B01D53/8603 ,  B01D2253/102 ,  B01D2257/306 ,  B01D2259/40 ,  B01J2219/00006 ,  C01B3/384 ,  C01B2203/0233 ,  C01B2203/0238 ,  C01B2203/04 ,  C01B2203/0475 ,  C01B2203/0495 ,  C01B2203/062 ,  C01B2203/0816 ,  C01B2203/0894 ,  C01B2203/1041 ,  C01B2203/1052 ,  C01B2203/1241 ,  C01B2203/127 ,  C01B2203/148 ,  Y02P20/124

摘要： Synthesis gas for FT synthesis is produced using a producing apparatus including an active carbon adsorbing vessel for adsorbing impurities in a natural gas, a hydro-desulfurizer for hydrogenating and desulfurizing sulfur content in the natural gas under a condition of a partial pressure of hydrogen of 100 to 200 kPa, a second hydrogen supplying line for supplying hydrogen to the natural gas between the hydro-desulfurizer and a reactor, the reactor for obtaining synthesis gas by reacting the natural gas, carbon dioxide and steam in the presence of a catalyst for reforming, and a heat recovering boiler for cooling the synthesis gas at a cooling rate of 2000 to 4000° C./second.

摘要翻译： 用于FT合成的合成气体是使用包括在天然气中吸附杂质的活性炭吸附容器的制造装置，在氢气分压为100的条件下在天然气中氢化和脱硫硫含量的加氢脱硫剂 用于向加氢脱硫剂和反应器之间的天然气供给氢的第二氢供给管线，所述反应器用于在重整催化剂存在下使天然气，二氧化碳和蒸汽反应获得合成气， 以及以2000〜4000℃/秒的冷却速度冷却合成气的热回收锅炉。

公开(公告)号：US20050220703A1

公开(公告)日：2005-10-06

申请号：US11090393

申请日：2005-03-25

申请人： Masaru Ihara ,  Yoshifumi Suehiro ,  Yasumasa Morita ,  Kiyoshi Inaba ,  Toshio Shimizu ,  Osamu Iwamoto ,  Tomoyuki Mikuriya ,  Ryuichiro Kajiyama ,  Ken-ichiro Fujimoto ,  Yasuhiro Onishi

发明人： Masaru Ihara ,  Yoshifumi Suehiro ,  Yasumasa Morita ,  Kiyoshi Inaba ,  Toshio Shimizu ,  Osamu Iwamoto ,  Tomoyuki Mikuriya ,  Ryuichiro Kajiyama ,  Ken-ichiro Fujimoto ,  Yasuhiro Onishi

IPC分类号： C10L3/10 ,  B01D53/86 ,  B01J8/04 ,  B01J10/00 ,  C01B3/24 ,  C01B3/26 ,  C01B3/32 ,  C01B3/38 ,  C01B32/40 ,  C01B32/50 ,  C10G2/00 ,  C10K1/02 ,  C10K1/04

CPC分类号： C10G2/32 ,  B01D53/8603 ,  B01D2253/102 ,  B01D2257/306 ,  B01D2259/40 ,  B01J2219/00006 ,  C01B3/384 ,  C01B2203/0233 ,  C01B2203/0238 ,  C01B2203/04 ,  C01B2203/0475 ,  C01B2203/0495 ,  C01B2203/062 ,  C01B2203/0816 ,  C01B2203/0894 ,  C01B2203/1041 ,  C01B2203/1052 ,  C01B2203/1241 ,  C01B2203/127 ,  C01B2203/148 ,  Y02P20/124

摘要： Synthesis gas for FT synthesis is produced using a producing apparatus including an active carbon adsorbing vessel for adsorbing impurities in a natural gas, a hydro-desulfurizer for hydrogenating and desulfurizing sulfur content in the natural gas under a condition of a partial pressure of hydrogen of 100 to 200 kPa, a second hydrogen supplying line for supplying hydrogen to the natural gas between the hydro-desulfurizer and a reactor, the reactor for obtaining synthesis gas by reacting the natural gas, carbon dioxide and steam in the presence of a catalyst for reforming, and a heat recovering boiler for cooling the synthesis gas at a cooling rate of 2000 to 4000° C./second.

摘要翻译： 用于FT合成的合成气体是使用包括在天然气中吸附杂质的活性炭吸附容器的制造装置，在氢气分压为100的条件下在天然气中氢化和脱硫硫含量的加氢脱硫剂 用于向加氢脱硫剂和反应器之间的天然气供给氢的第二氢供给管线，所述反应器用于在重整催化剂存在下使天然气，二氧化碳和蒸汽反应获得合成气， 以及以2000〜4000℃/秒的冷却速度冷却合成气的热回收锅炉。

公开(公告)号：US5037774A

公开(公告)日：1991-08-06

申请号：US73839

申请日：1987-07-15

申请人： Hideki Yamawaki ,  Yoshihiro Arimoto ,  Shigeo Kodama ,  Takafumi Kimura ,  Masaru Ihara

发明人： Hideki Yamawaki ,  Yoshihiro Arimoto ,  Shigeo Kodama ,  Takafumi Kimura ,  Masaru Ihara

IPC分类号： H01L27/12 ,  H01L21/20 ,  H01L21/205 ,  H01L21/324 ,  H01L21/86

CPC分类号： H01L21/324 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S148/017 ,  Y10S148/025 ,  Y10S148/15

摘要： Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.

摘要翻译： 通过使用绝缘体上硅（SOI）技术制造半导体器件的工艺。 SOI结构的Si层包括Si的界面层和在其上形成的Si的缓冲层，由此可以有效地防止在Si层中形成堆垛层错。 用钼酸盐溶液预处理下层绝缘材料，并在Si的缓冲层和上覆的有源Si层之间插入缓慢生长的单晶Si的附加层也有效地抑制堆垛层错。 可以以良好的产量生产具有高质量的半导体器件。

公开(公告)号：US4931425A

公开(公告)日：1990-06-05

申请号：US249653

申请日：1988-09-27

申请人： Takafumi Kimura ,  Hideki Yamawaki ,  Kazuto Ikeda ,  Masaru Ihara

发明人： Takafumi Kimura ,  Hideki Yamawaki ,  Kazuto Ikeda ,  Masaru Ihara

IPC分类号： C01G1/00 ,  C01G3/00 ,  C04B41/87 ,  C23C16/40 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

CPC分类号： C23C16/408 ,  H01L39/2438 ,  Y10S505/73

摘要： A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.

公开(公告)号：US08057744B2

公开(公告)日：2011-11-15

申请号：US12097161

申请日：2005-12-14

申请人： Yasuhiro Onishi ,  Kenichiro Fujimoto ,  Masaru Ihara ,  Yoshifumi Suehiro ,  Yasumasa Morita ,  Kiyoshi Inaba ,  Toshio Shimizu ,  Osamu Iwamoto

发明人： Yasuhiro Onishi ,  Kenichiro Fujimoto ,  Masaru Ihara ,  Yoshifumi Suehiro ,  Yasumasa Morita ,  Kiyoshi Inaba ,  Toshio Shimizu ,  Osamu Iwamoto

IPC分类号： B01J8/18 ,  F27B15/08

CPC分类号： B01J8/228 ,  B01J8/007 ,  B01J8/085 ,  B01J8/1818 ,  B01J8/22 ,  B01J2208/00123 ,  B01J2208/00539 ,  B01J2208/0061 ,  C10G2/342 ,  C10G2300/4006 ,  C10G2300/805

摘要： According to an exemplary embodiment, a bubble column-type slurry bed Fischer-Tropsch synthesis reaction process can be provided, in which synthesis gas supplied continuously from the bottom of a reactor contacts suspended catalyst particles to form liquid hydrocarbons, gaseous hydrocarbons and water. Additionally, a slurry of suspended liquid products and catalyst particles can move from the reactor to the lower portion of a separation vessel to separate the catalyst particles and gaseous products. Further, a process can be provided in which the liquid products formed are sent to the separation vessel a process in which liquid products can be derived. Additionally, a process can be provided in which a slurry in which catalyst particles are concentrated is derived from the bottom of the separation vessel and circulated to the bottom of the reactor, are driven by the driving force of synthesis gas without using an external drive power source.

摘要翻译： 根据示例性实施例，可以提供泡沫塔型浆料床费 - 托合成反应方法，其中从反应器底部连续供应的合成气与悬浮的催化剂颗粒接触以形成液体烃，气态烃和水。 此外，悬浮液体产物和催化剂颗粒的浆料可以从反应器移动到分离容器的下部，以分离催化剂颗粒和气态产物。 此外，可以提供将所形成的液体产品送到分离容器的方法，其中可以得到液体产物的过程。 此外，可以提供一种方法，其中催化剂颗粒浓缩的浆料从分离容器的底部衍生并循环到反应器的底部，由合成气的驱动力驱动，而不使用外部驱动力 资源。

公开(公告)号：US5107119A

公开(公告)日：1992-04-21

申请号：US683421

申请日：1991-04-10

申请人： Takafumi Kimura ,  Hiroshi Nakao ,  Hideki Yamawaki ,  Masaru Ihara ,  Keigo Nagasaka

发明人： Takafumi Kimura ,  Hiroshi Nakao ,  Hideki Yamawaki ,  Masaru Ihara ,  Keigo Nagasaka

IPC分类号： C01B13/14 ,  C01G1/00 ,  C23C14/54 ,  C23C16/52 ,  G01N21/84 ,  H01B12/06 ,  H01B13/00 ,  H01L39/00 ,  H01L39/24

CPC分类号： G01N21/8422 ,  C23C14/54 ,  C23C16/52 ,  G01N21/3563 ,  G01N21/3581 ,  Y10S505/842

摘要： A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.

摘要翻译： 一种评价超导体特性的方法，包括：将光照射到保持在预定温度的超导体; 检测透过超导体的光并构成透射光的光谱; 并且使用所获得的光谱，计算有助于正常导通的电子数与在超导体中有助于超导的电子数的比率，该比在所述预定温度下有效。 还公开了通过使用该方法形成超导体膜的方法和装置。

公开(公告)号：US4137108A

公开(公告)日：1979-01-30

申请号：US749099

申请日：1976-12-09

申请人： Masaru Ihara ,  Masayuki Jifuku

发明人： Masaru Ihara ,  Masayuki Jifuku

IPC分类号： H01L27/00 ,  C01F7/42 ,  C30B25/02 ,  C30B25/14 ,  C30B29/20 ,  H01L21/316 ,  H01L21/86 ,  H01L21/205 ,  H01L21/76

CPC分类号： H01L21/3162 ,  C30B25/02 ,  C30B25/14 ,  C30B29/20 ,  H01L21/02178 ,  H01L21/02263 ,  H01L21/02293 ,  Y10S438/967

摘要： A single crystal of Al.sub.2 O.sub.3 is epitaxially grown on an Si-single crystal of a semiconductor device by a vapor growth method. This vapor growth method employs starting materials of HCl, Al and CO.sub.2. Further, this method advantageouslyemploys a carrier gas to carry the gaseous product of the reaction of HCl with Al. An apparatus for the production of the above-mentioned semiconductor device comprises a chamber means for the reaction of the gaseous product and the single crystal, a reaction chamber for the reaction of Al and HCl, and an introducing tube for introducing CO.sub.2 in the proximity of the Si-single crystal.

摘要翻译： Al2O3的单晶通过气相生长法在半导体器件的Si单晶上外延生长。 该气相生长法采用HCl，Al和CO2的原料。 此外，该方法有利地是携带载气以携带HCl与Al的反应的气态产物。 用于生产上述半导体器件的装置包括用于气态产物和单晶的反应的室装置，用于Al和HCl的反应的反应室和用于将CO 2引入附近的引入管 Si单晶。