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    Electrostatic chuck usable in high density plasma
    11.
    发明授权
    Electrostatic chuck usable in high density plasma 失效
    静电吸盘可用于高密度等离子体

    公开(公告)号：US5583737A

    公开(公告)日：1996-12-10

    申请号：US452351

    申请日：1995-05-26

    Applicant: Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

    Inventor： Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

    CPC classification number: H01L21/6833 ,  H01L21/6831

    Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

    Abstract translation: 一种用于将晶片保持在等离子体处理室中的静电卡盘，所述卡盘包括具有顶表面的基座，用于承载冷却气体的内部歧管以及从所述内部歧管向所述顶部表面引导的第一多个孔; 以及在基座的顶表面上的介电层。 电介质层具有顶侧和第二多个孔，每个孔与基座中的第一多个孔的不同孔中的一个对准。 第一和第二孔形成从内部歧管延伸到电介质层的顶侧的多个通道，并且冷却气体通过该通道供应到晶片的背面。 与其对准的第一孔和第二孔中的每一个形成多个通道中的不同的一个。 当晶片通过静电力固定在静电卡盘上时，通道集中在电介质层的靠近冷却气体泄漏较高区域的区域中。

    VHF/UHF reactor system
    16.
    发明授权
    VHF/UHF reactor system 失效
    VHF / UHF反应堆系统

    公开(公告)号：US5210466A

    公开(公告)日：1993-05-11

    申请号：US852826

    申请日：1992-03-13

    Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC: C23C16/509 ,  H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H05H1/46 ,  H05K2201/10015 ,  H05K2201/10689

    Abstract: A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

    Abstract translation: 公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。 在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。 结果，减少了电敏感小型几何装置的损坏概率。

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