公开(公告)号：US06843858B2

公开(公告)日：2005-01-18

申请号：US10115830

申请日：2002-04-02

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: B08B7/00 ,  C23C16/44 ,  B08B3/00

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method of operating a substrate processing chamber. In one embodiment the method includes processing one or more substrates in the substrate processing chamber and subsequently cleaning the chamber using a dry cleaning process. This substrate processing and dry cleaning sequence is then repeated multiple times before chamber is further cleaned by flowing a cleaning gas into the chamber and forming a plasma within the chamber from the cleaning gas in an extended cleaning process. During the extended cleaning process the plasma is maintained within the chamber for a total of at least 5 minutes before the chamber is reused to process a substrate.

Abstract translation: 一种操作基板处理室的方法。 在一个实施例中，该方法包括处理衬底处理室中的一个或多个衬底，并随后使用干式清洁工艺清洁腔室。 然后通过将清洁气体流入室中并且在延长的清洁过程中从清洁气体中在室内形成等离子体，在室进一步清洁之前，重复该基板处理和干洗顺序多次。 在延长的清洁过程中，等离子体在室再次用于处理衬底之前保持在室内总共至少5分钟。

公开(公告)号：US06527910B2

公开(公告)日：2003-03-04

申请号：US09733122

申请日：2000-12-08

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H01L2100

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: An apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract translation: 使用去蚀刻技术沉积保形介电层的装置特征在于选择性地减少沉积气体流入处理室，其中设置有由保形介电层覆盖的台阶表面的基板。 通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

公开(公告)号：US6121161A

公开(公告)日：2000-09-19

申请号：US233366

申请日：1999-01-19

Applicant: Kent Rossman ,  Turgut Sahin ,  Hichem M'Saad ,  Romuald Nowak

Inventor： Kent Rossman ,  Turgut Sahin ,  Hichem M'Saad ,  Romuald Nowak

IPC: C23C14/56 ,  C23C16/44 ,  C23C16/50 ,  H01L21/205 ,  H01L21/31

CPC classification number: C23C16/4401 ,  C23C14/564 ,  C23C16/4404

Abstract: A method and apparatus for controlling the introduction of contaminates into a deposition chamber that occur naturally within the chamber components. The CVD chamber is "seasoned" with a protective layer after a dry clean operation and before a substrate is introduced into the chamber. The deposited seasoning layer has a lower diffusion rate for typical contaminants in relation to the chamber component materials and covers the chamber component, reducing the likelihood that the naturally occurring contaminants will interfere with subsequent processing steps. After deposition of the seasoning layer is complete, the chamber is used for one to n substrate deposition steps before being cleaned by another clean operation as described above and then reseasoned.

Abstract translation: 一种用于控制污染物引入到腔室部件内自然发生的沉积室的方法和装置。 在干燥清洁操作之后并且在将基板引入室之前，CVD室被保护层“经过调节”。 沉积的调味剂层对于典型的污染物相对于室组分材料具有较低的扩散速率并且覆盖室组分，降低了天然存在的污染物将干扰后续处理步骤的可能性。 在调味层的沉积完成之后，将该室用于一至n个衬底沉积步骤，然后通过如上所述的另一个清洁操作进行清洁，然后再次进行处理。

公开(公告)号：US06077357A

公开(公告)日：2000-06-20

申请号：US867684

申请日：1997-05-29

Applicant: Kent Rossman ,  Shijian Li ,  Brian Lue

Inventor： Kent Rossman ,  Shijian Li ,  Brian Lue

IPC: C23C16/458 ,  C23C16/46 ,  H01J37/32 ,  H01L21/683 ,  C23C16/00 ,  C23F1/02 ,  H01L21/00

CPC classification number: C23C16/463 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  H01J37/321 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract translation: 本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。 本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

公开(公告)号：US5976993A

公开(公告)日：1999-11-02

申请号：US623445

申请日：1996-03-28

Applicant: K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

Inventor： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

IPC: C23C16/40 ,  C23C16/517 ,  H01L21/316 ,  H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/517 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

Abstract translation: 通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。 通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。 在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。 在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。

公开(公告)号：US20070071908A1

公开(公告)日：2007-03-29

申请号：US11580271

申请日：2006-10-11

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: B05D5/12 ,  H05H1/24 ,  C23C16/00

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract translation: 使用去蚀刻技术沉积保形介电层的方法和装置特征在于选择性地减少沉积气体流入处理室，其中设置具有被保形电介质层覆盖的台阶表面的基板。 通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

公开(公告)号：US07159597B2

公开(公告)日：2007-01-09

申请号：US10153315

申请日：2002-05-21

Applicant: Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

Inventor： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

IPC: B08B7/04

CPC classification number: B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

Abstract: A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

Abstract translation: 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。

公开(公告)号：US06589868B2

公开(公告)日：2003-07-08

申请号：US09780800

申请日：2001-02-08

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H01L2144

CPC classification number: H01J37/32477 ,  C23C16/4404 ,  C23C30/00 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/905 ,  Y10S438/913

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

公开(公告)号：US06559052B2

公开(公告)日：2003-05-06

申请号：US09893350

申请日：2001-06-26

Applicant: Zhuang Li ,  Kent Rossman ,  Tzuyuan Yiin

Inventor： Zhuang Li ,  Kent Rossman ,  Tzuyuan Yiin

IPC: H01L2144

CPC classification number: H01L21/02667 ,  C23C16/24 ,  C23C16/507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022

Abstract: Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises positioning a substrate in a processing chamber, introducing an inert gas into the processing chamber, introducing a silicon source gas into the processing chamber generating a high density plasma, and depositing the amorphous silicon film. The amorphous silicon film is deposited at a substrate temperature 500° C. or less. The amorphous silicon film may then be annealed to improve film properties.

公开(公告)号：US06524969B2

公开(公告)日：2003-02-25

申请号：US09968342

申请日：2001-09-28

Applicant: Zhuang Li ,  Tzuyuan Yiin ,  Lung-Tien Han ,  Kent Rossman

Inventor： Zhuang Li ,  Tzuyuan Yiin ,  Lung-Tien Han ,  Kent Rossman

IPC: H01L2120

CPC classification number: C23C16/466 ,  C23C16/507 ,  C23C16/52 ,  C30B25/10 ,  H01J37/32935

Abstract: Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.