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11.发明授权Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid 有权通过选择性沉积前体液体制造集成电路的方法和装置公开(公告)号：US06448190B1
公开(公告)日：2002-09-10
申请号：US09316917
申请日：1999-05-21
IPC分类号： H01L2100
CPC分类号： H01L21/316 , H01L21/3144 , H01L2924/0002 , H01L2924/00
摘要： A thin film of solid material is selectively formed during fabrication of an integrated circuit by applying a liquid precursor to a substrate having a first surface and a second surface and treating the liquid precursor. The first surface has different physical properties than the second surface such that a solid thin film forms on the first surface but does not form on the second surface. The substrate is washed after formation of said solid thin film to remove any residues of said liquid from the second substrate surface.
摘要翻译： 通过将液体前体施加到具有第一表面和第二表面的基底并处理液体前体，在制造集成电路期间选择性地形成固体材料薄膜。 第一表面具有与第二表面不同的物理性质，使得在第一表面上形成固体薄膜，但不形成在第二表面上。 在形成所述固体薄膜之后洗涤底物以从第二基材表面除去所述液体的任何残余物。
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公开(公告)号：US6143063A
公开(公告)日：2000-11-07
申请号：US128058
申请日：1998-08-03
IPC分类号： B05D7/00 , B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L27/115 , H01L39/24 , H01L41/24 , H05K3/10 , C09D5/00
CPC分类号： H01L21/31691 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/1291 , C23C18/14 , C23C26/02 , C23C8/10 , C30B7/00 , C30B7/005 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
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13.发明授权Misted precursor deposition apparatus and method with improved mist and mist flow 失效雾化前体沉积装置和方法具有改善的雾气流
公开(公告)号：US5962085A
公开(公告)日：1999-10-05
申请号：US610330
申请日：1996-03-04
IPC分类号： B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L27/115 , H01L39/24 , H01L41/24 , H05K3/10 , C23C8/00
CPC分类号： H01L21/02197 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C26/02 , C23C8/10 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
摘要翻译： 衬底位于沉积室内，衬底限定衬底平面。 阻挡板以与衬底相对的基本平行的方式设置成隔开关系，所述阻挡板在平行于所述衬底的平面中的面积基本上等于所述衬底平面中所述衬底的所述面积，即在所述衬底的10％内 区。 阻挡板具有所述阻挡板和所述基板之间的平均距离的5％的平滑度公差。 产生雾，允许沉淀在缓冲室中，通过1微米过滤器过滤，并流入基板和阻挡板之间的沉积室，以在基板上沉积液体层。 将液体干燥以在基板上形成固体材料的薄膜，然后将其并入集成电路的电气部件中。
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14.发明授权Misted precursor deposition apparatus and method with improved mist and mist flow 有权雾化前体沉积装置和方法具有改善的雾气流公开(公告)号：US06383555B1
公开(公告)日：2002-05-07
申请号：US09615373
申请日：2000-07-13
IPC分类号： B05D512
CPC分类号： H01L21/31691 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C8/10 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/1291 , C23C18/14 , C23C26/02 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/314 , H05K3/105 , Y10S427/101
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
摘要翻译： 衬底位于沉积室内，衬底限定衬底平面。 液体前体被超声波或文氏管装置迷雾，产生胶体雾。 产生雾，允许沉淀在缓冲室中，通过高达0.01微米的系统过滤，并流入基板和阻挡板之间的沉积室，以在基板上沉积液体层。 将液体干燥以在基板上形成固体材料的薄膜，然后将其并入集成电路的电气部件中。
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公开(公告)号：US06198225B1
公开(公告)日：2001-03-06
申请号：US09326838
申请日：1999-06-07
申请人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： G09G310
CPC分类号： G09G3/367 , G09G3/22 , H01J1/30 , H01J2201/306 , H01J2329/00
摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.
摘要翻译： 平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。 在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。 在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。 层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。 薄膜厚度优选在50-140nm的范围内，从而提高薄膜的极化性和透明度。 显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。 铁电薄膜中的功能梯度增强了电子发射。 可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。 荧光体可以夹在电介质和铁电体之间以增强发射。
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公开(公告)号：US5965219A
公开(公告)日：1999-10-12
申请号：US591341
申请日：1996-01-25
IPC分类号： B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , C23C8/00
CPC分类号： C23C18/1216 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/14 , C23C26/02 , C23C8/10 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： UV radiation is applied to a substrate in a deposition chamber to desorb water and other contaminates from it. A liquid precursor is misted, flowed into the deposition chamber and deposited on a substrate while UV radiation is applied to the mist. The film of liquid on the substrate is dried and annealed on the substrate while the UV radiation is applied to form a solid thin film of a metal oxide. The thin film is then incorporated into an electronic device of an integrated circuit fabricated on the substrate. The application of UV radiation to both the mist during deposition and the thin film after deposition significantly increases the quality of the resulting integrated circuits. The process has been found to be particularly excellent for making BST, strontium bismuth tantalate, and strontium bismuth niobate.
摘要翻译： 将UV辐射施加到沉积室中的基底以从其中解吸水和其它污染物。 液体前体被雾化，流入沉积室并沉积在基底上，同时将紫外线辐射施加于雾。 将衬底上的液体膜干燥并在衬底上退火，同时施加UV辐射以形成金属氧化物的固体薄膜。 然后将薄膜并入到在衬底上制造的集成电路的电子器件中。 在沉积期间将UV辐射施加到雾和沉积后的薄膜显着增加了所得到的集成电路的质量。 已经发现该方法对于制备BST，钽酸锶锶和铌酸铋锶特别优异。
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17.发明授权UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue 失效用于制造具有低漏电流和低极化疲劳的电子器件的UV辐射过程
公开(公告)号：US6133050A
公开(公告)日：2000-10-17
申请号：US405885
申请日：1995-03-17
IPC分类号： C30B29/30 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , C30B29/68 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L27/108 , H01L27/115 , H01L21/31
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
摘要翻译： 将作为溶剂的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。 将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。 该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。 然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。 或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火 使用。 使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。
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18.发明授权
公开(公告)号：US5468679A
公开(公告)日：1995-11-21
申请号：US154760
申请日：1993-11-18
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/20 , H01L21/324
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/60 , H01L41/318 , H01L28/55 , H05K3/105
摘要： A precursor comprising a medium-length ligand carboxylate, such as a metal 2-ethylhexanoate, in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed.
摘要翻译： 将包含中长度配体羧酸盐的前体（例如2-乙基己酸金属）在二甲苯溶剂中的前体施加到集成电路晶片。 将晶片烘烤以干燥前体，退火以在晶片上形成层状超晶格材料，然后完成集成电路。
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19.发明授权Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications 失效制备用于铁电，高介电常数，集成电路应用的分层超晶格材料的方法
公开(公告)号：US6080592A
公开(公告)日：2000-06-27
申请号：US477331
申请日：1995-06-07
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00 , H01L21/8242
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： An integrated curcuit includes a layered superlattice material having the .sub.formula A1w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+sk B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
摘要翻译： 集成电路包括具有式A1w1 + a1A2w2 + a2的分层超晶格材料。 。 。 Ajwj + ajS1x1 + s1S2x2 + s2。 。 。 Skxk + skB1y1 + b1B2y2 + b2。 。 。 Blyl + blQz-2，其中A1，A2。 。 。 Aj表示钙钛矿结构中的A位元素，S1，S2。 。 。 Sk代表超晶格发生器元件B1，B2。 。 。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单位元素中元素的原子数，并且至少w1和y1为 非零。 这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中。 其他的是高介电常数材料，它们在长期使用中不会降解或击穿，并且被应用在易失性存储器中。
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20.发明授权
公开(公告)号：US6056994A
公开(公告)日：2000-05-02
申请号：US477111
申请日：1995-06-07
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C4/12 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , B05D5/12
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/14 , C23C26/02 , C23C4/123 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/1878 , H01L41/318 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate. In one embodiement the substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit the precursor liquid on the substrate. In another embodiment, the precursor is spin-coated on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
摘要翻译： 制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体，并沉积在基材上。 在一个实施方案中，将衬底放置在真空沉积室内，使前体液体发生雾化，并将雾流入沉积室，同时将室保持在环境温度下，以将前体液体沉积在衬底上。 在另一个实施方案中，将前体旋涂在基材上。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。
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