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11.发明授权High energy product permanent magnet having improved intrinsic coercivity and method of making same 失效具有改善的内在矫顽力的高能产品永久磁铁及其制造方法
公开(公告)号：US4968347A
公开(公告)日：1990-11-06
申请号：US274875
申请日：1988-11-22
申请人： Ramamoorthy Ramesh , Gareth Thomas
发明人： Ramamoorthy Ramesh , Gareth Thomas
CPC分类号： B22F1/0003 , H01F1/0557 , H01F1/0577 , H01F41/0293
摘要： A high energy rare earth-ferromagnetic metal permanent magnet is disclosed which is characterized by improved intrinsic coercivity and is made by forming a particulate mixture of a permanent magnet alloy comprising one or more rare earth elements and one or more ferromagnetic metals and forming a second particulate mixture of a sintering alloy consisting essentially of 92-98 wt. % of one or more rare earth elements selected from the class consisting of Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and mixtures of two or more of such rare earth elements, and 2-8 wt. % of one or more alloying metals selected from the class consisting of Al, Nb, Zr, V, Ta, Mo, and mixtures of two or more of such metals. The permanent magnet alloy particles and sintering aid alloy are mixed together and magnetically oriented by immersing the mixture in an axially aligned magnetic field while cold pressing the mixture. The compressed mixture is then sintered at a temperature above the melting point of the sintering aid and below the melting point of the permanent magnet alloy to thereby coat the particle surfaces of the permanent magnetic alloy particles with the sintering aid while inhibiting migration of the rare earth element in the sintering aid into the permanent magnet alloy particles to thereby raise the intrinsic coercivity of the permanent magnet alloy without substantially lowering the high energy of the permanent magnet alloy.
摘要翻译： 公开了一种高能稀土 - 铁磁金属永磁体，其特征在于改进了本征矫顽力，并且通过形成包括一种或多种稀土元素和一种或多种铁磁性金属的永磁体合金的颗粒混合物并形成第二颗粒 烧结合金的混合物主要由92-98wt。 选自Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu中的一种或多种稀土元素的％，以及两种或更多种稀土元素的混合物，以及2-8wt。 选自Al，Nb，Zr，V，Ta，Mo中的一种或多种合金金属的％，以及两种或更多种这些金属的混合物。 将永久磁铁合金颗粒和烧结助剂合金混合在一起并通过将混合物浸入轴向排列的磁场中而磁化取向，同时冷压该混合物。 然后将压缩的混合物在高于烧结助剂的熔点并低于永磁体合金的熔点的温度下烧结，由此用烧结助剂涂覆永久磁性合金颗粒的颗粒表面，同时抑制稀土的迁移 烧结助剂中的元素进入永磁体合金颗粒，从而提高永磁体合金的固有矫顽力，而不会显着降低永磁体合金的高能量。
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公开(公告)号：US09356224B2
公开(公告)日：2016-05-31
申请号：US12916209
申请日：2010-10-29
IPC分类号： H01L41/187 , H01L41/08 , H03H9/02 , H01L41/316
CPC分类号： H01L41/081 , H01L41/1878 , H01L41/316 , H03H9/02543
摘要： The present invention provides for a composition comprising a thin film of BiFeO3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO3 thin film, and a second electrode in contact with the BiFeO3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.
摘要翻译： 本发明提供一种组合物，其包含厚度范围为20nm至300nm的BiFeO 3薄膜，与BiFeO 3薄膜接触的第一电极和与BiFeO 3薄膜接触的第二电极; 其中所述第一和第二电极是电连通的。 组合物是游离的或基本上不含铅（Pb）。 当向BFO薄膜施加电场时，BFO薄膜具有改变其体积和/或形状的压电特性。
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公开(公告)号：US20110133601A1
公开(公告)日：2011-06-09
申请号：US12916209
申请日：2010-10-29
CPC分类号： H01L41/081 , H01L41/1878 , H01L41/316 , H03H9/02543
摘要： The present invention provides for a composition comprising a thin film of BiFeO3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO3 thin film, and a second electrode in contact with the BiFeO3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.
摘要翻译： 本发明提供一种组合物，其包含厚度范围为20nm至300nm的BiFeO 3薄膜，与BiFeO 3薄膜接触的第一电极和与BiFeO 3薄膜接触的第二电极; 其中所述第一和第二电极是电连通的。 组合物是游离的或基本上不含铅（Pb）。 当向BFO薄膜施加电场时，BFO薄膜具有改变其体积和/或形状的压电特性。
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14.发明授权Conductively doped strontium titanate barrier intermediate a silicon underlayer and an epitaxial metal oxide film 失效在硅衬底和外延金属氧化物膜之间的导电掺杂的钛酸锶屏障公开(公告)号：US06781176B2
公开(公告)日：2004-08-24
申请号：US10328541
申请日：2002-12-23
申请人： Ramamoorthy Ramesh
发明人： Ramamoorthy Ramesh
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A ferroelectric memory cell formed on a monocrystalline silicon underlayer, either an epitaxial silicon contact plug to a transistor source or drain or silicon gate region for which the memory cell forms a non-volatile gate. A conductive barrier layer of vanadium or niobium substituted strontium titanate is epitaxially grown over the silicon, and a lower metal oxide electrode layer, a ferroelectric layer and an upper metal oxide electrode layer are epitaxially grown on the barrier layer. No platinum barrier is needed beneath the ferroelectric stack. The invention can be applied to many other functional oxide devices including micromachined electromechanical (MEM) devices and ferromagnetic tri-layer devices.
摘要翻译： 在单晶硅衬底上形成的铁电存储单元，即存储单元形成非易失性栅极的硅晶体管源极或漏极或硅栅极区域的外延硅接触插塞。 在硅上外延生长钒或铌取代钛酸锶的导电阻挡层，并且在阻挡层上外延生长下部金属氧化物电极层，铁电体层和上部金属氧化物电极层。 铁电堆下方不需要铂金屏障。 本发明可以应用于包括微加工机电（MEM）器件和铁磁性三层器件的许多其它功能氧化物器件。
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公开(公告)号：US06482538B2
公开(公告)日：2002-11-19
申请号：US09912994
申请日：2001-07-25
申请人： Ramamoorthy Ramesh , Yu Wang , Jeffrey M. Finder , Zhiyi Yu , Ravindranath Droopad , Kurt Eisenbeiser
发明人： Ramamoorthy Ramesh , Yu Wang , Jeffrey M. Finder , Zhiyi Yu , Ravindranath Droopad , Kurt Eisenbeiser
IPC分类号： B32B1900
CPC分类号： H01L21/02197 , B32B9/00 , H01L21/02293 , H01L21/31691 , H01L28/56 , H01L41/0478 , H01L41/1875 , H01L41/1876 , H01L41/29 , H01L41/319 , Y10T428/24917
摘要： A high quality epitaxial layer of monocrystalline Pb(Mg,Nb)O3—PbTiO3 or Pb(Mg1−xNbx)O3—PbTiO3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
摘要翻译： 首先在硅晶片上生长钛酸锶层，可以将大量的单晶Pb（Mg，Nb）O3-PbTiO3或Pb（Mg1-xNbx）O3-PbTiO3）的高质量外延层生长在大的硅晶片上。 钛酸锶层是通过硅氧化物的非晶界面层与硅晶片隔开的单晶层。
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公开(公告)号：US5358927A
公开(公告)日：1994-10-25
申请号：US531255
申请日：1990-05-31
CPC分类号： H01L39/2496 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2448 , H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/729 , Y10S505/732
摘要： A method, and the resulting structure, of growing a superconducting perovskite thin film of, for example YBa.sub.2 Cu.sub.3 O.sub.7-x. A buffer layer of, for example, the perovskite PrBa.sub.2 Cu.sub.3 O.sub.7-y, is grown on a crystalline (001) substrate under conditions which favor growth of a,b-axis oriented material. Then the YBa.sub.2 Cu.sub.3 O.sub.7-x layer is deposited on the buffer layer under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110.degree. C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa.sub.2 Cu.sub.3 O.sub.7-x, which nonetheless shows a superconducting transition temperature near that of c-axis oriented films.
摘要翻译： 一种制备例如YBa2Cu3O7-x的超导钙钛矿薄膜的方法和所得结构。 在有利于b轴取向材料生长的条件下，在结晶（001）衬底上生长例如钙钛矿PrBa2Cu3O7-y的缓冲层。 然后，YBa2Cu3O7-x层在有利于生长c轴取向材料在衬底上的变化的生长条件下沉积在缓冲层上，例如衬底温度升高110℃。然而，缓冲层作为 迫使b轴YBa2Cu3O7-x的生长的模板，其仍然表现出接近c轴取向薄膜的超导转变温度。
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公开(公告)号：US20230353157A1
公开(公告)日：2023-11-02
申请号：US17733166
申请日：2022-04-29
申请人： Tanay A. Gosavi , Chia-Ching Lin , Sasikanth Manipatruni , Dmitri Evgenievich Nikonov , Ian Alexander Young , Ramamoorthy Ramesh , Darrell G. Schlom , Megan E. Holtz , Rachel A. Steinhardt
发明人： Tanay A. Gosavi , Chia-Ching Lin , Sasikanth Manipatruni , Dmitri Evgenievich Nikonov , Ian Alexander Young , Ramamoorthy Ramesh , Darrell G. Schlom , Megan E. Holtz , Rachel A. Steinhardt
摘要： Magnetoelectric spin-orbit logic (MESO) devices comprise a magnetoelectric switch capacitor coupled to a spin-orbit coupling structure. The logic state of the MESO device is represented by the magnetization orientation of the ferromagnet of the magnetoelectric switch capacitor and the spin-orbit coupling structure converts the magnetization orientation of the ferromagnet to an output current. MESO devices in which all or at least some of the constituent layers of the device are perovskite materials can provide advantages such as improved control over the manufacturing of MESO devices and high quality interfaces between MESO layers due to the lattice matching of perovskite materials.
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公开(公告)号：US08222510B2
公开(公告)日：2012-07-17
申请号：US12539135
申请日：2009-08-11
CPC分类号： H01L35/22
摘要： The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.
摘要翻译： 本发明提供一种包括含有第一复合氧化物的衬底的热电系统，其中衬底任选地嵌入第二复合氧化物。 该热电系统可用于热电发电或热电冷却。
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公开(公告)号：US20070029593A1
公开(公告)日：2007-02-08
申请号：US11297015
申请日：2005-12-08
申请人： Ramamoorthy Ramesh
发明人： Ramamoorthy Ramesh
IPC分类号： H01L29/94
CPC分类号： B81B3/0018 , H01L21/02194 , H01L21/02203 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A functional perovskite cell formed on a silicon substrate layer and including a functional layer of bismuth ferrite (BiFeO3 or BFO) sandwiched between two electrode layers. An optional intermediate template layer, for example, of strontium titanate allows the bismuth ferrite layer to be crystallographically aligned with the silicon substrate layer. Other barrier layers of platinum or an intermetallic alloy produce a polycrystalline BFO layer. The cell may be configured as a non-volatile memory cell or a MEMS structure respectively depending upon the ferroelectric and piezoelectric character of BFO. Lanthanum substitution in the BFO increases ferroelectric performance. The films may be grown by MOCVD using a heated vaporizer.
摘要翻译： 形成在硅衬底层上并且包含夹在两个电极层之间的铋铁氧体（BiFeO 3 N 3或BFO）的功能层的功能性钙钛矿电池。 可选的中间模板层例如钛酸锶允许铋铁氧体层与硅衬底层晶体学对准。 铂或金属间化合物的其它阻挡层产生多晶BFO层。 可以根据BFO的铁电和压电特性分别将单元配置为非易失性存储单元或MEMS结构。 BFO中的镧取代增加了铁电性能。 可以使用加热蒸发器通过MOCVD生长膜。
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20.发明授权Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon 失效外延模板和屏障，用于在硅上整合功能性薄膜金属氧化物异质结构公开(公告)号：US06642539B2
公开(公告)日：2003-11-04
申请号：US10231401
申请日：2002-08-29
IPC分类号： H01L2912
CPC分类号： H01L27/11502 , G11C11/22 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A ferroelectric memory cell formed on a monocrystalline silicon underlayer, either an epitaxial silicon contact plug to a transistor source or drain or silicon gate region for which the memory cell forms a non-volatile gate. A conductive barrier layer of doped strontium titanate, whether cationically substituted, such by lanthanum or niobium for strontium and titanium respectively, or anionically deficient, is epitaxially grown over the silicon, and a lower metal oxide electrode layer, a ferroelectric layer and an upper metal oxide electrode layer are epitaxially grown on the barrier layer. No platinum barrier is needed beneath the ferroelectric stack. The invention can be applied to many other functional oxide materials of the Ruddlesden-Popper and devices including micromachined electromechanical (MEM) devices and ferromagnetic tri-layer devices.
摘要翻译： 在单晶硅衬底上形成的铁电存储单元，即存储单元形成非易失性栅极的硅晶体管源极或漏极或硅栅极区域的外延硅接触插塞。 掺杂的钛酸锶的导电阻挡层，无论是阳离子取代的，如分别用于锶和钛的镧或铌或阴离子缺陷的导电阻挡层在硅上外延生长，并且下部金属氧化物电极层，铁电层和上部金属 氧化物电极层在阻挡层上外延生长。 铁电堆下方不需要铂金屏障。 本发明可以应用于Ruddlesden-Popper的许多其它功能氧化物材料和包括微加工机电（MEM）器件和铁磁性三层器件的器件。
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