公开(公告)号：US09165693B2

公开(公告)日：2015-10-20

申请号：US14541236

申请日：2013-11-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Willem Henk Urbanus ,  Marco Jan-Jaco Wieland

IPC: H01J37/141 ,  H05H1/28 ,  G21K1/02 ,  G21K5/04 ,  H01J37/30 ,  H01J37/24 ,  H01J37/317 ,  H01J37/02 ,  H01J37/16 ,  H01J37/065 ,  H01J37/12

CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

Abstract: The invention relates to a collimator electrode, comprising an electrode body (81) that is provided with a central electrode aperture (82), wherein the electrode body defines an electrode height between two opposite main surfaces, and wherein the electrode body accommodates a cooling conduit (105) inside the electrode body for transferring a cooling liquid (102). The electrode body preferably has a disk shape or an oblate ring shape.The invention further relates to a collimator electrode stack for use in a charged particle beam generator, comprising a first collimator electrode and a second collimator electrode that are each provided with a cooling conduit (105) for transferring the cooling liquid (102), and a connecting conduit (110) for a liquid connection between the cooling conduits of the first and second collimator electrodes.

Abstract translation: 本发明涉及一种准直器电极，包括设置有中心电极孔（82）的电极体（81），其中电极体限定两个相对的主表面之间的电极高度，并且其中电极体容纳冷却导管 （105），用于传送冷却液（102）。 电极体优选具有盘状或扁圆形状。 本发明还涉及一种用于带电粒子束发生器的准直器电极叠层，其包括第一准直器电极和第二准直器电极，每个准直器电极和第二准直器电极都设置有用于传送冷却液体（102）的冷却导管（105） 连接导管（110）用于第一和第二准直仪电极的冷却管道之间的液体连接。

公开(公告)号：USRE45552E1

公开(公告)日：2015-06-09

申请号：US13689665

申请日：2012-11-29

Applicant: Mapper Lithography IP B.V.

Inventor： Pieter Kruit ,  Remco Jager ,  Stijn Willem Herman Karel Steenbrink ,  Marco Jan-Jaco Wieland

IPC: G21K5/04 ,  H01J37/317

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70291 ,  G03F7/70383 ,  G03F7/70508 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31771 ,  H01L21/67282

Abstract: The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.

Abstract translation: 本发明涉及一种探针形成光刻系统，用于使用黑白写入策略（即写入或不写入网格单元）在诸如晶片的目标表面上产生图案，从而将所述图案划分在包括网格单元的格子上 所述图案包括尺寸大于网格单元的尺寸的特征，在每个单元中，所述探针被切换为“开”或“关”，其中所述目标上的探针覆盖比网格单元大得多的表面积，以及 其中在特征内，在探针大小的范围以及这种系统可以基于的方法上实现黑白写入的位置相关分布。

公开(公告)号：US10297420B2

公开(公告)日：2019-05-21

申请号：US14287234

申请日：2014-05-27

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Teunis Van De Peut ,  Marco Jan-Jaco Wieland

IPC: H01J37/302 ,  H01J37/317 ,  G06T1/60 ,  G06T1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/04 ,  H01J37/30 ,  G03F7/20 ,  H04N1/405

Abstract: A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.

公开(公告)号：US10078274B2

公开(公告)日：2018-09-18

申请号：US15250977

申请日：2016-08-30

Applicant: Mapper Lithography IP B.V.

Inventor： Hendrik Jan De Jong ,  Marco Jan-Jaco Wieland

IPC: G03F7/20 ,  H01L21/683 ,  H01L21/687

Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.

公开(公告)号：US20180120704A1

公开(公告)日：2018-05-03

申请号：US15389593

申请日：2016-12-23

Applicant: MAPPER Lithography IP B.V.

Inventor： Marcel Nicolaas Jacobus van Kervinck ,  Vincent Sylvester Kuiper ,  Marco Jan-Jaco Wieland

IPC: G03F7/20 ,  H01L21/263 ,  H01L29/06 ,  H01L23/528 ,  H01L27/02 ,  H01L25/065

CPC classification number: H01L23/528 ,  G03F7/2059 ,  G03F7/2061 ,  G06F17/5068 ,  G06F17/5077 ,  H01L21/263 ,  H01L21/76816 ,  H01L25/0655 ,  H01L27/0207 ,  H01L27/0617 ,  H01L29/0684 ,  H01L29/0692

Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.

公开(公告)号：US09355751B2

公开(公告)日：2016-05-31

申请号：US14541238

申请日：2014-11-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Willem Henk Urbanus ,  Marco Jan-Jaco Wieland

IPC: G21K1/02 ,  G21K5/04 ,  H01J37/24 ,  H01J37/30 ,  H01J37/317 ,  H01J37/02 ,  H01J37/16 ,  H01J37/065 ,  H01J37/12

CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

Abstract: The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.

Abstract translation: 本发明涉及一种电极堆叠（70），其包括用于沿光轴（A）操纵带电粒子束的堆叠电极（71-80）。 每个电极包括具有用于带电粒子束的孔的电极体。 电极体相互间隔开，并且电极孔沿光轴同轴对准。 电极堆叠包括在每对相邻电极之间的电绝缘间隔结构（89），用于将电极（71-80）沿着轴向方向（Z）定位在预定的相互距离处。 第一电极和第二电极各自包括具有一个或多个支撑部分（86）的电极主体，其中每个支撑部分构造成容纳至少一个间隔结构（89）。 电极堆叠具有至少一个构造成将第一和第二电极的支撑部分（86）以及中间间隔结构（89）保持在一起的夹紧构件（91-91c）。

公开(公告)号：US20150243481A1

公开(公告)日：2015-08-27

申请号：US14626891

申请日：2015-02-19

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco Wieland

IPC: H01J37/317 ,  H01J37/04 ,  H01J37/30

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/31769

Abstract: The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0

Abstract translation: 本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近度函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中恒定和近似函数 被定义为所述总和中β接近函数和α接近函数之间的比率，其中0 <＆eegr; <1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的 布局模式。

公开(公告)号：USRE45206E1

公开(公告)日：2014-10-28

申请号：US13738947

申请日：2013-01-10

Applicant: Mapper Lithography IP B.V.

Inventor： Pieter Kruit ,  Erwin Slot ,  Tijs Frans Teepen ,  Marco Jan-Jaco Wieland ,  Stijin Willem Herman Karel Steenbrink

IPC: H01J3/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/2443 ,  H01J2237/2446 ,  H01J2237/30433 ,  H01J2237/31757

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

Abstract translation: 用于测量带电粒子束系统的大量带电粒子束的特性的光刻系统，传感器和方法，特别是直接写入光刻系统，其中通过使用转换器元件将带电粒子束转换成光束，使用 与所述转换器元件成一直线的一系列光敏检测器，例如二极管，CCD或CMOS器件，用于检测所述光束，用所述光束曝光之后，从所述检测器电子地读出所得到的信号，利用所述信号确定 一个或多个光束特性的值，从而使用自动电子计算器，以及电子地调整带电粒子系统，以便校正超出所有或多个所述带电粒子束的规格范围值，每一个用于一个或多个属性， 基于所述计算的属性值。