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    Proximity effect correction in a charged particle lithography system
    4.
    发明授权
    Proximity effect correction in a charged particle lithography system 有权
    带电粒子光刻系统中的接近效应校正

    公开(公告)号：US09184026B2

    公开(公告)日：2015-11-10

    申请号：US14626891

    申请日：2015-02-19

    申请人： Mapper Lithography IP B.V.

    发明人： Marco Jan-Jaco Wieland

    IPC分类号： H01J37/30 ,  H01J37/302 ,  G21K5/04 ,  H01J37/317 ,  H01J37/04

    CPC分类号： H01J37/3174 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/31769

    摘要： The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0

    摘要翻译： 本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近度函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中恒定和近似函数 被定义为所述总和中β接近函数和α接近函数之间的比率，其中0 <＆eegr; <1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的 布局模式。

    Method of and system for exposing a target
    5.
    发明授权
    Method of and system for exposing a target 有权
    暴露目标的方法和系统

    公开(公告)号：US08859983B2

    公开(公告)日：2014-10-14

    申请号：US13935602

    申请日：2013-07-05

    申请人： Mapper Lithography IP B.V.

    发明人： Marco Jan-Jaco Wieland

    IPC分类号： H01J37/317 ,  B82Y10/00 ,  B82Y40/00

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00

    摘要： The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch Pproj,X in the first direction between beamlets of the plurality of beamlets in the array.

    摘要翻译： 本发明涉及通过多个子束曝光目标的方法。 首先，提供多个子束。 子束排列成阵列。 此外，提供要暴露的目标。 随后，产生在多个子束与目标之间的第一方向的相对运动。 最后，多个子束在第二方向上移动，使得每个子束在目标上露出多条扫描线。 第一方向上的相对移动和多个子束在第二方向上的移动使得由多个子束暴露的相邻扫描线之间的距离小于第一方向上的投影间距Pproj，X在子束之间的第一方向上 阵列中的多个子束。

    Charged particle multi-beamlet lithography system with modulation device
    6.
    发明授权
    Charged particle multi-beamlet lithography system with modulation device 有权
    带调制装置的带电粒子多光束光刻系统

    公开(公告)号：US08759787B2

    公开(公告)日：2014-06-24

    申请号：US13937321

    申请日：2013-07-09

    申请人： Mapper Lithography IP B.V.

    发明人： Marco Jan-Jaco Wieland ,  Remco Jager ,  Alexander Hendrik Vincent Van Veen ,  Stijn Willem Herman Karel Steenbrink

    IPC分类号： G21K5/04

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/07 ,  H01J37/3174 ,  H01J2237/0262 ,  H01J2237/0435 ,  H01J2237/0437 ,  H01J2237/31774

    摘要： The invention relates to a charged particle lithography system for patterning a target. The lithography system has a beam generator for generating a plurality of charged particle beamlets, a beam stop array with a beam-blocking surface provided with an array of apertures; and a modulation device for modulating the beamlets by deflection. The modulation device has a substrate provided with a plurality of modulators arranged in arrays, each modulator being provided with electrodes extending on opposing sides of a corresponding aperture. The modulators are arranged in groups for directing a group of beamlets towards a single aperture in the beam stop array. Individual modulators within each group have an orientation such that a passing beamlet, if blocking is desired, is directed to a blocking position onto the beam stop array. Beamlet blocking positions for different beamlets are substantially homogeneously spread around the corresponding single aperture in the beam stop array.

    摘要翻译： 本发明涉及一种用于图案化靶的带电粒子光刻系统。 光刻系统具有用于产生多个带电粒子束的光束发生器，具有设置有孔阵列的光束阻挡表面的光束停止阵列; 以及用于通过偏转调制子束的调制装置。 调制装置具有设置有排列成阵列的多个调制器的基板，每个调制器设置有在对应的孔的相对侧上延伸的电极。 调制器被分组地布置成用于将一组子束引向光束停止阵列中的单个孔。 每个组内的各个调制器具有这样的取向，使得如果需要阻挡，则通过的子束被引导到光束停止阵列上的阻挡位置。 不同子束的光束阻挡位置基本均匀地分布在光束停止阵列中相应的单个孔周围。