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    Methods Of Forming A Pattern On A Substrate
    11.
    发明申请
    Methods Of Forming A Pattern On A Substrate 有权
    在基板上形成图案的方法

    公开(公告)号：US20140256140A1

    公开(公告)日：2014-09-11

    申请号：US13786848

    申请日：2013-03-06

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Vishal Sipani ,  Anton J. deVillers ,  Ranjan Khurana

    IPC: H01L21/308

    CPC classification number: H01L21/0337

    Abstract: A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.

    Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 光致抗蚀剂在圆柱状结构的顶部和侧面向内形成。 图案化光致抗蚀剂以在圆柱状结构物的横向外侧形成到光致抗蚀剂中的间隙。 间隙空间被至少三个圆筒状结构包围。 图案化的光致抗蚀剂用作蚀刻掩模，同时将间隙开口蚀刻到基底中，同时光致抗蚀剂在圆柱状结构的侧向内侧。 公开其他方面。

    Methods of forming an array of memory cells, methods of forming a plurality of field effect transistors, methods of forming source/drain regions and isolation trenches, and methods of forming a series of spaced trenches into a substrate
    12.
    发明授权
    Methods of forming an array of memory cells, methods of forming a plurality of field effect transistors, methods of forming source/drain regions and isolation trenches, and methods of forming a series of spaced trenches into a substrate 有权
    形成存储单元阵列的方法，形成多个场效应晶体管的方法，形成源极/漏极区域和隔离沟槽的方法以及将一系列间隔开的沟槽形成衬底的方法

    公开(公告)号：US08796086B2

    公开(公告)日：2014-08-05

    申请号：US14053665

    申请日：2013-10-15

    Applicant: Micron Technology, Inc.

    Inventor： Neal L. Davis ,  Richard T. Housley ,  Ranjan Khurana

    IPC: H01L21/8238

    CPC classification number: H01L21/76224 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052

    Abstract: A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.

    Abstract translation: 将一系列间隔开的沟槽形成到衬底中的方法包括在衬底上形成多个间隔开的线。 各向异性蚀刻的侧壁间隔物形成在间隔开的线的相对侧上。 这些线的个体具有比在紧邻线之间的紧邻的间隔物之间​​的最小宽度的最大宽度。 去除间隔的线以在间隔件之间形成一系列交替的第一和第二掩模开口。 第一掩模开口位于间隔开的线的位置并且比第二掩模开口更宽。 交替的第一和第二沟槽分别通过交替的第一和第二掩模开口同时蚀刻到衬底中，以形成比第二沟槽在衬底内更宽和更深的第一沟槽。 公开了其他实现和实施例。

    Methods of forming a pattern on a substrate
    16.
    发明授权
    Methods of forming a pattern on a substrate 有权
    在基板上形成图案的方法

    公开(公告)号：US08937018B2

    公开(公告)日：2015-01-20

    申请号：US13786848

    申请日：2013-03-06

    Applicant: Micron Technology, Inc.

    Inventor： Vishal Sipani ,  Anton J. deVillers ,  Ranjan Khurana

    IPC: H01L21/311 ,  H01L21/308

    CPC classification number: H01L21/0337

    Abstract: A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.

    Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 光致抗蚀剂在圆柱状结构的顶部和侧面向内形成。 图案化光致抗蚀剂以在圆柱状结构物的横向外侧形成到光致抗蚀剂中的间隙。 间隙空间被至少三个圆筒状结构包围。 图案化的光致抗蚀剂用作蚀刻掩模，同时将间隙开口蚀刻到基底中，同时光致抗蚀剂在圆柱状结构的侧向内侧。 公开其他方面。

    Methods of forming a pattern on a substrate
    17.
    发明授权
    Methods of forming a pattern on a substrate 有权
    在基板上形成图案的方法

    公开(公告)号：US08889559B2

    公开(公告)日：2014-11-18

    申请号：US13712830

    申请日：2012-12-12

    Applicant: Micron Technology, Inc.

    Inventor： Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

    IPC: H01L21/308 ,  B44C1/22

    CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

    Abstract: A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.

    Abstract translation: 在衬底上形成图案的方法包括在第二材料中形成的第一开口的高度向外突出形成间隔开的第一材料包括柱。 在第一含材料柱的侧壁上形成侧壁间隔物。 侧壁间隔物在第一含材料柱的横向向外形成间隙空间。 间隙空间由四个第一材料包括柱的侧壁上的纵向接触的侧壁间隔单独包围。

    Semiconductor Constructions and Methods of Forming Semiconductor Constructions
    18.
    发明申请
    Semiconductor Constructions and Methods of Forming Semiconductor Constructions 有权
    半导体结构和形成半导体结构的方法

    公开(公告)号：US20140232008A1

    公开(公告)日：2014-08-21

    申请号：US14259313

    申请日：2014-04-23

    Applicant: Micron Technology, Inc.

    Inventor： Justin B. Dorhout ,  Ranjan Khurana ,  David Swindler ,  Jianming Zhou

    IPC: H01L23/528

    CPC classification number: H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.

    Abstract translation: 一些实施例包括具有主要沿着第一方向延伸的一对线并且在线之间具有一对接触的半导体结构。 触点通过光刻尺寸彼此间隔开，并且通过亚光刻尺寸与线间隔开。 一些实施例包括形成半导体结构的方法。 特征形成在一个基地上。 每个特征具有第一类型侧壁和第二类型侧壁。 这些特征通过间隙彼此间隔开。 一些间隙是第一类型侧壁之间的第一类型间隙，而其它间隙是第二类型侧壁之间的第二类型间隙。 形成掩模材料以相对于第二类型间隙选择性地填充第一类型的间隙。 去除过量的掩模材料以留下图案化掩模。 图案从图案化掩模转移到基底中。

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