公开(公告)号：US20020163024A1

公开(公告)日：2002-11-07

申请号：US09849159

申请日：2001-05-04

Applicant: Motorola, Inc.

Inventor： Dirk C. Jordan ,  Ravindranath Droopad ,  Zhiyi Yu ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01L21/02505 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02647

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). The monocrystalline material layer is epitaxially grown over at least a portion of the accommodating buffer layer via lateral epitaxial overgrowth.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层（26）晶格匹配。 单晶材料层通过侧向外延生长在外部生长在容纳缓冲层的至少一部分上。

公开(公告)号：US20020163010A1

公开(公告)日：2002-11-07

申请号：US09849172

申请日：2001-05-04

Applicant: Motorola, Inc.

Inventor： Ravindranath Droopad ,  Dirk C. Jordan ,  Zhiyi Yu

IPC: H01L031/0328

CPC classification number: C30B25/18 ,  H01L21/02197 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/31691

Abstract: High quality epitaxial layers (26) of wide bandgap materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide or nitride spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The layer of wide bandgap material (26) can be used to form electronic devices such as high frequency devices or light emitting devices such as lasers and light emitting diodes.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以生长宽带隙材料的高质量外延层（26），覆盖单晶衬底（22），例如大硅晶片。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅（28）的非晶界面层与硅晶片（22）间隔开的单晶氧化物或氮化物层。 宽带隙材料层（26）可用于形成诸如高频器件的电子器件或诸如激光器和发光二极管的发光器件。

公开(公告)号：US20020153524A1

公开(公告)日：2002-10-24

申请号：US09838273

申请日：2001-04-19

Applicant: Motorola Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  William J. Ooms

IPC: H01L029/12 ,  H01L021/00 ,  H01L027/12 ,  H01L031/0392

CPC classification number: H01L21/02507 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691

Abstract: A high quality semiconductor structure includes a monocrystalline substrate and a perovskite stack overlying the substrate. The perovskite stack may be formed of a first accommodating layer formed of a first perovskite oxide material having a first lattice constant. A second accommodating layer is formed on the first accommodating layer. The second accommodating layer is formed of a second perovskite oxide material having a second lattice constant which is different from the first lattice constant of the first accommodating layer. A monocrystalline material layer is formed overlying the second accommodating layer. A strain is effected at the interface between the perovskite stack and the substrate, at the interface between the perovskite stack and the monocrystalline material layer and/or at the interface between the first accommodating layer and the second accommodating layer. The strain reduces defects in the monocrystalline material layer and results in reduced Schottky leakage current.

Abstract translation: 高质量的半导体结构包括单晶衬底和覆盖衬底的钙钛矿堆叠。 钙钛矿堆叠可以由具有第一晶格常数的第一钙钛矿氧化物材料形成的第一容纳层形成。 在第一容纳层上形成第二容纳层。 第二容纳层由具有与第一容纳层的第一晶格常数不同的第二晶格常数的第二钙钛矿氧化物材料形成。 在第二容纳层上形成单晶材料层。 在钙钛矿堆和衬底之间的界面处，在钙钛矿堆和单晶材料层之间的界面处和/或在第一容纳层和第二容纳层之间的界面处进行应变。 该应变降低了单晶材料层的缺陷，并导致肖特基漏电流减小。

公开(公告)号：US20020144725A1

公开(公告)日：2002-10-10

申请号：US09832354

申请日：2001-04-10

Applicant: Motorola, Inc.

Inventor： Dirk C. Jordan ,  Barbara Foley Barenburg ,  Ravindranath Droopad

IPC: H01L031/00

CPC classification number: H01L31/0735 ,  H01L21/31641 ,  H01L21/31645 ,  H01L31/02167 ,  H01L31/055 ,  H01L31/0725 ,  H01L31/1836 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544

Abstract: Solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The solar cell structures also include a dye (110) to increase an efficiency of the solar cell.

Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的高质量外延层的单晶半导体材料的太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 太阳能电池结构还包括用于提高太阳能电池效率的染料（110）。

公开(公告)号：US20020074624A1

公开(公告)日：2002-06-20

申请号：US10076450

申请日：2002-02-19

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

IPC: H01L023/58

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US20020000584A1

公开(公告)日：2002-01-03

申请号：US09755340

申请日：2001-01-05

Applicant: Motorola, Inc.

Inventor： Kurt W. Eisenbeiser ,  Ravindranath Droopad ,  Zhiyi Yu

IPC: H01L021/00 ,  H01L031/0328 ,  H01L029/76

CPC classification number: H01L21/02381 ,  C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/31691 ,  H01L21/318 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/0605 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High quality epitaxial layers of conductive monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer(24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline material spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer (24).

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将导电单晶材料的高质量外延层生长在覆盖单晶衬底（22），例如大硅晶片上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅的非晶界面层（28）与硅晶片（22）间隔开的单晶材料层。 非晶界面层（28）耗散应变并允许高质量单晶容纳缓冲层（24）的生长。

公开(公告)号：US20040150076A1

公开(公告)日：2004-08-05

申请号：US10767998

申请日：2004-02-02

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Einsebeiser

IPC: H01L023/58

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US20040149203A1

公开(公告)日：2004-08-05

申请号：US10768108

申请日：2004-02-02

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US20030022525A1

公开(公告)日：2003-01-30

申请号：US09905098

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Zhiyi Yu ,  Corey Overgaard

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates such as large silicon wafers (22) by forming a compliant substrate for growing the monocrystalline layers (26). An accommodating buffer layer comprises a layer of monocrystalline oxide (24) spaced apart from a silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The silicon substrate (22) is intentionally nullmis-cutnull off a major axis to provide a surface that facilitates two dimensional growth of the low-defect monocrystalline material layer (26).

Abstract translation: 通过形成用于生长单晶层（26）的柔性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底例如大硅晶片（22）上。 容纳缓冲层包括通过氧化硅（28）的非晶界面层与硅晶片（22）间隔开的单晶氧化物层（24）。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 硅衬底（22）有意地从长轴上“误切”，以提供便于低缺陷单晶材料层（26）的二维生长的表面。

公开(公告)号：US20030022431A1

公开(公告)日：2003-01-30

申请号：US09911473

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L021/8249

CPC classification number: C30B23/02 ,  C30B23/002 ,  C30B29/22 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L22/26

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to control the stoichiometry of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Abstract translation: 使用RHEED信息生长单晶氧化物材料（24）的高质量外延层覆盖在单晶衬底例如大硅晶片（22）上以控制生长膜的化学计量。 单晶氧化物层（24）可以用于形成用于附加层的单晶生长的柔顺衬底。 实现顺应性衬底的形成的一种方法包括首先通过氧化硅（28）的非晶界面层在与硅晶片（22）间隔开的硅晶片（22）上生长容纳缓冲层（24）。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层（24）的生长。