公开(公告)号：US20040079285A1

公开(公告)日：2004-04-29

申请号：US10279078

申请日：2002-10-24

Applicant: MOTOROLA, INC.

Inventor： Hao Li ,  Ravindranath Droopad ,  Dirk Jordan ,  Corey Overgaard ,  Zhiyi Yu

IPC: C23C016/00 ,  H01L021/306

CPC classification number: H01L21/02269 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31604

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The growth of the monocrystalline oxide film for accommodating buffer layer (24) is achieved through an automated oxygen delivery system (200) that controls a variety of oxygen control parameters, such as pressure control, ramp control, and flow control. The oxygen delivery system (200) is preferably a dual stage pressure control system (204, 206) with the ability to precisely control the oxygen profile in the growth chamber. The oxygen delivery system (200) allows total automation of oxide film growth in an MBE chamber (102).

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 用于容纳缓冲层（24）的单晶氧化物膜的生长通过控制各种氧气控制参数（例如压力控制，斜坡控制和流量控制）的自动氧气输送系统（200）来实现。 氧气输送系统（200）优选是双级压力控制系统（204,206），其能够精确地控制生长室中的氧气分布。 氧输送系统（200）允许在MBE室（102）中氧化膜生长的完全自动化。

公开(公告)号：US20020163024A1

公开(公告)日：2002-11-07

申请号：US09849159

申请日：2001-05-04

Applicant: Motorola, Inc.

Inventor： Dirk C. Jordan ,  Ravindranath Droopad ,  Zhiyi Yu ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01L21/02505 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02647

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). The monocrystalline material layer is epitaxially grown over at least a portion of the accommodating buffer layer via lateral epitaxial overgrowth.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层（26）晶格匹配。 单晶材料层通过侧向外延生长在外部生长在容纳缓冲层的至少一部分上。

公开(公告)号：US20020140013A1

公开(公告)日：2002-10-03

申请号：US09824388

申请日：2001-04-02

Applicant: Motorola, Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02538 ,  H01L21/02546

Abstract: High quality ionicly-bonded semiconductor materials can be grown overlying covalently-bonded substrates (22), such as large silicon wafers, by utilizing a stable template layer (24). The template layer is formed of material consisting of alkaline earth metal, alkaline earth metal silicide, alkaline earth metal silicate and/or Zintl-type phase material. A high-quality ionicly-bonded semiconductor material (26) may then be grown over the template layer.

Abstract translation: 通过利用稳定的模板层（24），可以将高质量离子键合的半导体材料生长成覆盖在共价键合的基板（22）上，例如大的硅晶片。 模板层由由碱土金属，碱土金属硅化物，碱土金属硅酸盐和/或Zintl型相材料构成的材料形成。 然后可以在模板层上生长高质量的离子键合的半导体材料（26）。

公开(公告)号：US20020089023A1

公开(公告)日：2002-07-11

申请号：US09755691

申请日：2001-01-05

Applicant: Motorola, Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard ,  John Leonard Edwards JR.

IPC: H01L029/94 ,  H01L029/76 ,  H01L031/062 ,  H01L023/58 ,  H01L021/336 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/28194 ,  H01L21/31691 ,  H01L29/511 ,  H01L29/516 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of a metal oxide-nitride such as MnOmnullxNx, wherein M is a metallic or semi-metallic element or combination of metallic and/or semi-metallic elements and m and n are integers. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density and improved chemical, thermal, and electrical stability over conventional metal oxides.

Abstract translation: 用于形成高介电常数器件结构的结构和方法包括单晶半导体衬底和由诸如MnOm-xNx的金属氧化物氮化物形成的绝缘层，其中M是金属或半金属元素或金属和/ 或半金属元素，m和n是整数。 根据本发明形成的半导体器件与常规金属氧化物相比表现出低的漏电流密度和改善的化学，热和电稳定性。

公开(公告)号：US20030022525A1

公开(公告)日：2003-01-30

申请号：US09905098

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Zhiyi Yu ,  Corey Overgaard

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates such as large silicon wafers (22) by forming a compliant substrate for growing the monocrystalline layers (26). An accommodating buffer layer comprises a layer of monocrystalline oxide (24) spaced apart from a silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The silicon substrate (22) is intentionally nullmis-cutnull off a major axis to provide a surface that facilitates two dimensional growth of the low-defect monocrystalline material layer (26).

Abstract translation: 通过形成用于生长单晶层（26）的柔性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底例如大硅晶片（22）上。 容纳缓冲层包括通过氧化硅（28）的非晶界面层与硅晶片（22）间隔开的单晶氧化物层（24）。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 硅衬底（22）有意地从长轴上“误切”，以提供便于低缺陷单晶材料层（26）的二维生长的表面。

公开(公告)号：US20030022431A1

公开(公告)日：2003-01-30

申请号：US09911473

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L021/8249

CPC classification number: C30B23/02 ,  C30B23/002 ,  C30B29/22 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L22/26

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to control the stoichiometry of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Abstract translation: 使用RHEED信息生长单晶氧化物材料（24）的高质量外延层覆盖在单晶衬底例如大硅晶片（22）上以控制生长膜的化学计量。 单晶氧化物层（24）可以用于形成用于附加层的单晶生长的柔顺衬底。 实现顺应性衬底的形成的一种方法包括首先通过氧化硅（28）的非晶界面层在与硅晶片（22）间隔开的硅晶片（22）上生长容纳缓冲层（24）。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层（24）的生长。

公开(公告)号：US20030020089A1

公开(公告)日：2003-01-30

申请号：US09911507

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L031/111

CPC classification number: H01L22/26 ,  C30B23/002 ,  C30B23/02 ,  H01L21/02197 ,  H01L21/02356 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8221 ,  H01L21/8258 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

公开(公告)号：US20020167005A1

公开(公告)日：2002-11-14

申请号：US09853744

申请日：2001-05-11

Applicant: Motorola, Inc

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/12 ,  H01L021/84 ,  H01L031/0392

CPC classification number: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/32 ,  H01L28/56

Abstract: The present invention provides semiconductor structures and methods for forming semiconductor structures which include monocrystalline oxide films exhibiting both high dielectric constants and low leakage current densities. In accordance with various aspects of the invention, a semiconductor structure includes a monocrystalline semiconductor substrate and one or more stoichiometrically graduated monocrystalline oxide layers. The stoichiometrically graduated monocrystalline oxide layer may include a perovskite material, such as an alkaline-earth metal titanate. Semiconductor devices fabricated in accordance with aspects of the present invention exhibit a high dielectric constant as well as a reduced leakage current density.

Abstract translation: 本发明提供用于形成半导体结构的半导体结构和方法，其包括表现出高介电常数和低漏电流密度的单晶氧化物膜。 根据本发明的各个方面，半导体结构包括单晶半导体衬底和一个或多个化学计量分级的单晶氧化物层。 化学计量分级的单晶氧化物层可以包括钙钛矿材料，例如碱土金属钛酸盐。 根据本发明的方面制造的半导体器件具有高介电常数以及降低的漏电流密度。