Device for forming a deposited film
    12.
    发明授权
    Device for forming a deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号:US5366554A

    公开(公告)日:1994-11-22

    申请号:US104497

    申请日:1993-08-10

    摘要: There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

    摘要翻译: 公开了一种用于形成沉积膜的装置,其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜,从而引起化学反应 包括多个用于形成彼此连接的沉积膜的室,所述室具有气体释放装置,其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口 彼此相对的表面以及支撑设定装置,其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

    Method for forming thin film multi-layer structure member
    14.
    发明授权
    Method for forming thin film multi-layer structure member 失效
    薄膜多层结构件形成方法

    公开(公告)号:US4801474A

    公开(公告)日:1989-01-31

    申请号:US1878

    申请日:1987-01-09

    摘要: A method for forming a thin multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises forming at least one layer of said semiconductor thin films on a substrate by introducing a precursor (B) formed in a decomposition space (B) which becomes the starting material for deposited film formation and an active species (C) formed in a decomposition space (C) which interacts with said precursor (B) separately into a deposition space (A) for forming a thin film to thereby effect chemical reaction through the interaction between said precursor (B) and said active species (C), and forming at least one layer of other thin films by introducing a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.

    摘要翻译: 一种用于形成具有至少一种受限于价电子的半导体薄膜和限制在带隙中的半导体薄膜中的至少一种的薄多层结构构件的方法包括:将至少一层所述半导体薄膜在 通过引入在分解空间(B)中形成的成为沉积膜形成起始材料的前体(B)和分解空间(C)中形成的与所述前体(B)相互作用的活性物质(C)的基板, 进入用于形成薄膜的沉积空间(A),从而通过所述前体(B)和所述活性物质(C)之间的相互作用进行化学反应,并通过引入气态原料形成至少一层其它薄膜 (a)薄膜形成和具有对所述起始材料(a)具有氧化作用的性质的气态卤素氧化剂进入反应空间以实现其间的接触 reby在化学上形成多种前体,包括在激发态下的前体,并使用前体的至少一种前体作为沉积膜的构成元素的进料源。

    Apparatus for continuously preparing a light receiving element for use
in photoelectromotive force member or image-reading photosensor
    15.
    发明授权
    Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor 失效
    用于连续制备用于光电动势部件或图像读取光电传感器的光接收元件的装置

    公开(公告)号:US4798166A

    公开(公告)日:1989-01-17

    申请号:US943756

    申请日:1986-12-19

    摘要: There is provided an apparatus for continuously preparing an improved light receiving element for photoelectromotive force member or image-reading photosensor comprising the plural number of continuously connected reaction chambers through opening and shutting gates for forming respective constituent layers for said light receiving element and a substrate conveying belt moving through the reaction chambers, each of the reaction chambers having a film forming space, a gas supplying means being extended into the film forming space through the upper wall of the reaction chamber, an exhausting means being disposed at the bottom portion of the reaction chamber and the substrate conveying and supporting means being positioned in the reaction chamber, the said gas supplying means having (a) a conduit for transporting (i) a gaseous substance capable of contributing to form a deposited film and (b) a conduit for transporting (ii) a gaseous oxidizing agent being so disposed that the gaseous substance (i) and the oxidizing agent (ii) may be introduced into the space positioned above the surface of the substrate and they may be contacted each other in the absence of a plasma to thereby to generate plural kinds of precursors containing excited precursors and let at least one kind of those precursors directed to form a deposited film on the substrate on the substrate conveying belt.

    摘要翻译: 提供了一种用于连续地制备用于光电动势部件的改进的光接收元件或图像读取光电传感器的装置,其包括通过用于形成用于所述光接收元件的各个构成层的开闭闸门的多个连续连接的反应室和基板输送 皮带移动通过反应室,每个反应室具有成膜空间,气体供应装置通过反应室的上壁延伸到成膜空间中,排气装置设置在反应的底部 并且基板输送和支撑装置位于反应室中,所述气体供应装置具有(a)用于输送(i)能够有助于形成沉积膜的气态物质的导管,以及(b)用于输送 (ii)如此设置的气态氧化剂使得气态废物 可以将(i)和氧化剂(ii)引入位于衬底表面上方的空间中,并且它们可以在不存在等离子体的情况下彼此接触,从而产生含有被激发的前体的多种前体,并使 至少一种这样的前驱体,用于在基板输送带上的基板上形成沉积膜。

    Method for forming deposited film by separately introducing an active
species and a silicon compound into a film-forming chamber
    20.
    发明授权
    Method for forming deposited film by separately introducing an active species and a silicon compound into a film-forming chamber 失效
    通过将活性物质和硅化合物分别引入成膜室来形成沉积膜的方法

    公开(公告)号:US5476694A

    公开(公告)日:1995-12-19

    申请号:US371610

    申请日:1995-01-12

    摘要: A method for forming a deposition film, comprising decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species; separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and the active species, which is capable of chemical interaction with the second compound containing silicon and hydrogen; and applying to a mixture of the second compound and the active species at least one excitation energy selected from optical, thermal and discharge energies to excite the second compound in the mixture, thereby facilitating the formation of a deposition film on the substrate.

    摘要翻译: 一种用于形成沉积膜的方法,包括通过施加能量以形成活性种分解在活化室中含有锗和卤素的第一化合物; 分别引入用于在基板上形成沉积膜的成膜室,含有硅和氢的第二化合物和能够与含有硅和氢的第二化合物发生化学相互作用的活性物质; 以及向所述第二化合物和所述活性物质的混合物施加选自光学,热能和放电能量的至少一种激发能,以激发所述混合物中的所述第二化合物,由此有助于在所述衬底上形成沉积膜。