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    Single wavelength laser module
    15.
    发明授权
    Single wavelength laser module 失效
    单波长激光模块

    公开(公告)号：US06697392B2

    公开(公告)日：2004-02-24

    申请号：US10323164

    申请日：2002-12-18

    申请人： Masato Ishino

    发明人： Masato Ishino

    IPC分类号： H01S310

    CPC分类号： H01S5/12 ,  G02B6/305 ,  G02B6/4207 ,  G02F1/3534 ,  H01S5/4087

    摘要： A single wavelength laser module utilizes difference-frequency light and includes a first laser device for oscillating light having a first wavelength and a second laser device arranged parallel to the first laser device for oscillating light having a second wavelength, an optical waveguide device arranged next to the output ends of the first and the second laser device, and an output optical fiber arranged next to the output end of the optical waveguide device. The optical waveguide device includes a coupling waveguide region and an optical wavelength conversion region. The coupling waveguide region combines light having the first wavelength and the second wavelength into a single waveguide by being optically coupled directly to the first and the second laser device. The optical wavelength conversion region includes an optical waveguide for generating difference-frequency light between the first wavelength and the second wavelength. The coupling waveguide region is coupled optically to the optical wavelength conversion region. The optical fiber is optically coupled directly to the optical waveguide of the optical waveguide device. This laser module can provide sufficient optical output without an isolator and can be mounted easily with a simple configuration.

    摘要翻译： 单波长激光模块利用差频光，并且包括用于振荡具有第一波长的光的第一激光装置和与第一激光装置平行布置的第二激光装置，用于振荡具有第二波长的光;光波导装置， 第一和第二激光装置的输出端以及布置在光波导装置的输出端旁边的输出光纤。 光波导器件包括耦合波导区域和光波长转换区域。 耦合波导区域通过直接光耦合到第一和第二激光装置将具有第一波长和第二波长的光组合成单个波导。 光波长转换区域包括用于产生第一波长和第二波长之间的差频光的光波导。 耦合波导区域光耦合到光波长转换区域。 光纤直接光耦合到光波导器件的光波导。 该激光模块可以提供足够的光输出，无需隔离器，并且可以以简单的配置轻松安装。

    Method of fabricating semiconductor laser
    20.
    发明授权
    Method of fabricating semiconductor laser 失效
    制造半导体激光器的方法

    公开(公告)号：US5227015A

    公开(公告)日：1993-07-13

    申请号：US735728

    申请日：1991-07-25

    申请人： Kiyoshi Fujihara ,  Masato Ishino ,  Naoki Takenaka

    发明人： Kiyoshi Fujihara ,  Masato Ishino ,  Naoki Takenaka

    IPC分类号： H01L21/306 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/323

    CPC分类号： H01L21/30612 ,  H01S5/227 ,  H01S5/1231 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/32391 ,  Y10S148/095

    摘要： An n-InP buffer layer 102, an InGaAsP active layer 103, a p-InP cladding layer 104 and a p-InGaAsP surface protective layer 105 are successively epitaxially grown on an n-InP substrate 101 having a (100) plane as a main plane. An etching mask 106, an insulating film, is formed in a stripe in the direction by photolithography and dry etching. Using a solution comprising a mixture of hydrochloric acid, oxygenated water and acetic acid, the n-InP buffer layer 102 is etched to a depth lower than the p-InP cladding layer 103, to form a mesa stripe 107. Next, the insulating film 106 is removed and the p-InGaAsP surface protective layer 105 is removed using a solution comprising a mixture of sulfuric acid and oxygenated water. Thereafter, InP current blocking layers 108 and 109 are selectively formed at the regions other than the mesa stripe 107 by the liquid-phase epitaxial growth. Thus, a buried heterostructure semiconductor laser is fabricated, having good laser characteristics and a high reliability.

    摘要翻译： 在具有（100）面作为主要的n-InP衬底101上依次外延生长n-InP缓冲层102，InGaAsP有源层103，p-InP包层104和p-InGaAsP表面保护层105 飞机 通过光刻和干蚀刻在<011>方向上的条纹中形成蚀刻掩模106，绝缘膜。 使用包含盐酸，含氧水和乙酸的混合物的溶液，将n-InP缓冲层102蚀刻到比p-InP包覆层103低的深度，以形成台面条107.接下来，绝缘膜 106，并且使用包含硫酸和含氧水的混合物的溶液除去p-InGaAsP表面保护层105。 此后，通过液相外延生长，在台面条107以外的区域选择性地形成InP电流阻挡层108和109。 因此，制造了具有良好的激光特性和高可靠性的掩埋异质结构半导体激光器。