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    SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    12.
    发明申请
    SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    SIC半导体器件及其制造方法

    公开(公告)号：US20120061682A1

    公开(公告)日：2012-03-15

    申请号：US13229892

    申请日：2011-09-12

    申请人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

    发明人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

    IPC分类号： H01L29/24 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068

    摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

    摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

    PRINTING APPARATUS
    13.
    发明申请
    PRINTING APPARATUS 审中-公开
    打印设备

    公开(公告)号：US20110273510A1

    公开(公告)日：2011-11-10

    申请号：US12965763

    申请日：2010-12-10

    申请人： Masahiro Sugimoto ,  Akira Kida ,  Masaharu Ueda

    发明人： Masahiro Sugimoto ,  Akira Kida ,  Masaharu Ueda

    IPC分类号： B41J2/165

    CPC分类号： B41J2/16585 ,  B41J2/16552 ,  B41J3/543 ,  B41J2002/16502

    摘要： A plurality of recording head units are supported by a holder in an integrated manner. The recording head units and pairs of rollers which hold a sheet are arranged alternately along a sheet conveying direction. An elastic member is disposed in a clearance between the holder and each of the recording head units supported by the holder in an elastically deformed manner to form an airtight seal. The airtight seal prevents upward leakage, from the clearance, of the humidifying gas introduced into the narrow space to which ink nozzles of the recording head units are exposed.

    摘要翻译： 多个记录头单元由保持器以一体的方式支撑。 保持片材的记录头单元和辊对沿着纸张传送方向交替布置。 弹性构件设置在保持器和由保持器以弹性变形方式支撑的每个记录头单元之间的间隙中以形成气密密封。 气密密封件防止从引入到记录头单元的墨喷嘴的狭窄空间中的加湿气体的间隙向上泄漏。

    Semiconductor devices and manufacturing method thereof
    14.
    发明授权
    Semiconductor devices and manufacturing method thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US07879705B2

    公开(公告)日：2011-02-01

    申请号：US12440939

    申请日：2007-09-21

    申请人： Akira Kawahashi ,  Masahiro Sugimoto ,  Akinori Seki ,  Masakatsu Maeda ,  Yasuo Takahashi

    发明人： Akira Kawahashi ,  Masahiro Sugimoto ,  Akinori Seki ,  Masakatsu Maeda ,  Yasuo Takahashi

    IPC分类号： H01L21/28 ,  H01L21/44

    CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/78 ,  Y10S438/931

    摘要： A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.

    摘要翻译： 阐述了在SiC半导体层上形成具有良好特性的欧姆电极的方法。 在该方法中，在SiC衬底的表面上形成Ti层和Al层。 具有Ti层和Al层的SiC衬底保持在高于或等于第一温度并低于第二温度的温度，直到Ti层中的所有Ti都与Al反应。 第一个温度是Ti与Al反应形成Al3Ti的温度区的最低温度，第二个温度是Al3Ti与SiC反应形成Ti3SiC2的温度区的最低温度。 由于这种维持温度步骤的结果，在SiC衬底的表面上形成Al 3 Ti层。 该方法还包括将具有Al 3 Ti层的SiC衬底进一步加热到高于第二温度的温度。 作为进一步加热的步骤的结果，SiC衬底与Al 3 Ti层的Al 3 Ti反应以在SiC衬底的表面上形成Ti 3 SiC 2层。