摘要:
A liquid ejection head includes a flow path forming member having an ejection orifice for ejecting liquid therefrom and a liquid flow path communicated with the ejection orifice, a silicon substrate including a supply port for supplying the liquid to the liquid flow path, and a protective film which is formed on a wall surface of the supply port and which is formed of an organic resin which is of the same material as that of a member forming the flow path forming member.
摘要:
The present invention provides an ink jet recording head which includes a substrate, an energy generating element which is disposed on the substrate and generates energy for discharging a liquid, an electrode which is disposed on the substrate and is electrically connected to the energy generating element, a passage-forming member which is disposed on the substrate, an adhesion layer which is disposed on the substrate and facilitates adhesion between the passage-forming member and the substrate, and a bump disposed on the electrode. The area of an upper surface of the bump is larger than the area of a lower surface of the bump, the lower surface being located on the substrate side, the upper surface being located opposite the lower surface, and a side face of the bump is covered with the adhesion layer. Thereby, a protective film is formed around the bump.
摘要:
A method for processing a silicon substrate includes preparing a first silicon substrate including an etching mask layer including first and second opening portions; forming a first recess in a portion of the silicon substrate corresponding to a region in the first opening portion; etching the silicon substrate by crystal anisotropic etching through the etching mask layer with an etching apparatus and an etchant, the etching proceeding in the first and second opening portions to form a through hole in a position corresponding to the first opening portion and to form a second recess in a position corresponding to the second opening portion; calculating an etching rate of the silicon substrate in terms of the etchant by using the second recess; and determining, by using the calculated etching rate, an etching condition for etching another silicon substrate with the etching apparatus after the etching of the first silicon substrate.
摘要:
Provided is a process of producing a liquid discharge head having a substrate, a passage-forming member, and a patterned layer. The process includes providing a resin layer on a substrate; providing a resist pattern on the resin layer for patterning the resin layer; forming a patterned layer by patterning the resin layer using the resist pattern as a mask; providing a layer for forming a passage pattern having a shape of passage on the resist pattern lying on the patterned layer; forming a passage pattern by patterning the layer for forming a passage pattern; removing the resist pattern; providing a passage-forming member so as to cover the passage pattern and the patterned layer; and removing the passage pattern to give the passage.
摘要:
A liquid crystal display substrate including gate and drain bus lines that are electrically insulated from each other at cross areas, pixel electrodes between the cross areas, and first thin film transistors connecting corresponding drain bus lines and pixel electrodes. Each first thin film transistor includes a channel region where current flows in a first direction, and first and second impurity doped regions of, respectively, first and second impurity concentrations. The first and second doped regions sandwich the channel region. The second impurity concentration is higher than the first. Also, a second thin film transistor is formed in the peripheral circuit area, and includes a channel region where current flows in a second direction that is perpendicular to the first direction. Third impurity doped regions, disposed on both sides of the channel region, have a third impurity concentration.
摘要:
A method of managing information used for maintenance and inspection of an apparatus includes collecting an apparatus operation history information with respect to an operation condition of the apparatus; updating the apparatus operation history information each time a maintenance and inspection service is implemented, and storing the updated information as a maintenance and inspection unitary cumulative history information until a next maintenance and inspection service; and analyzing the maintenance and inspection unitary cumulative history information by comparing the maintenance and inspection unitary cumulative history information before the maintenance and inspection service and the maintenance and inspection unitary cumulative history information after the maintenance and inspection service.
摘要:
A current path pattern of semiconductor material is formed on the insulating principal surface of a substrate. A gate pattern three-dimensionally crosses the current path pattern in first and second cross areas. A channel region of the current path pattern is defined in an area superposed upon by the gate pattern. A gate insulating film is disposed between the current path pattern and gate pattern. The current path pattern has a lightly doped drain structure on both sides of the channel region in the first cross area, and is not provided with the lightly doped drain structure in regions in contact with the channel region in the second cross area. TFTs are provided having a small off-current and being not necessary for high precision position alignment during manufacture processes even if a gate length is short.
摘要:
A parallel operation control method for different type power generation apparatuses to shift the power generation apparatuses having respective different drooping characteristics, in which the drooping characteristic is defined as a characteristic of decrease of a rated frequency along with an increase of a load, from independent operation of the power generation apparatuses under suitable drooping characteristics to parallel operation thereof to drive a common drive target, includes determining a load of one of the power generation apparatuses by subtracting a load of the other of the power generation apparatuses from a predetermined required load; changing a drooping characteristic of the one of the power generation apparatuses so as to coincide with a drooping characteristic of the other of the power generation apparatuses; and controlling the one of the power generation apparatuses so as to maintain frequency at the time of changing the drooping characteristic.
摘要:
A method for manufacturing a liquid-ejection head substrate including a silicon substrate having a supply port for supplying liquid is provided. The method includes: forming an etching mask layer on a surface of the silicon substrate, the etching mask layer having an opening in a portion corresponding to the supply port; forming a first recess in the surface of the silicon substrate by anisotropically etching the silicon substrate through the opening in the etching mask layer; forming a second recess that extends toward the other surface of the silicon substrate, in a surface of the first recess in the silicon substrate; and forming the supply port by anisotropically etching the silicon substrate from the surface provided with the second recess.
摘要:
A liquid ejection head includes a substrate having an energy-generating device configured to generate energy used for ejecting a liquid from an orifice; a transparent channel wall member forming an inner wall of a channel leading to the orifice; and an intermediate layer disposed between and in contact with a surface of the substrate and the channel wall member and having a refractive index different from a refractive index of the channel wall member. The intermediate layer has a first outer end surface forming contours of a symbol as viewed in a direction from the orifice toward the substrate and making a first angle with the surface of the substrate and a second outer end surface facing the channel and making a second angle with the surface of the substrate. The first angle is an obtuse angle. The second angle is smaller than the first angle.