METHOD FOR PROCESSING SILICON SUBSTRATE AND METHOD FOR PRODUCING SUBSTRATE FOR LIQUID EJECTING HEAD
    13.
    发明申请
    METHOD FOR PROCESSING SILICON SUBSTRATE AND METHOD FOR PRODUCING SUBSTRATE FOR LIQUID EJECTING HEAD 审中-公开
    加工硅基板的方法和用于生产用于液体喷射头的基板的方法

    公开(公告)号:US20110020966A1

    公开(公告)日:2011-01-27

    申请号:US12839301

    申请日:2010-07-19

    IPC分类号: H01L21/306

    摘要: A method for processing a silicon substrate includes preparing a first silicon substrate including an etching mask layer including first and second opening portions; forming a first recess in a portion of the silicon substrate corresponding to a region in the first opening portion; etching the silicon substrate by crystal anisotropic etching through the etching mask layer with an etching apparatus and an etchant, the etching proceeding in the first and second opening portions to form a through hole in a position corresponding to the first opening portion and to form a second recess in a position corresponding to the second opening portion; calculating an etching rate of the silicon substrate in terms of the etchant by using the second recess; and determining, by using the calculated etching rate, an etching condition for etching another silicon substrate with the etching apparatus after the etching of the first silicon substrate.

    摘要翻译: 一种处理硅衬底的方法包括:制备包含第一和第二开口部分的蚀刻掩模层的第一硅衬底; 在所述硅衬底的与所述第一开口部分中的区域相对应的部分中形成第一凹部; 通过蚀刻装置和蚀刻剂通过蚀刻掩模层通过晶体各向异性蚀刻来蚀刻硅衬底,蚀刻在第一和第二开口部分中进行,以在对应于第一开口部分的位置形成通孔,并形成第二 在与第二开口部相对应的位置处凹陷; 通过使用第二凹槽计算蚀刻剂方面的硅衬底的蚀刻速率; 以及通过使用所计算的蚀刻速率,在蚀刻所述第一硅衬底之后,使用所述蚀刻装置来确定用于蚀刻另一硅衬底的蚀刻条件。

    Process of producing liquid discharge head
    14.
    发明授权
    Process of producing liquid discharge head 有权
    生产液体排放头的工艺

    公开(公告)号:US08163187B2

    公开(公告)日:2012-04-24

    申请号:US12478602

    申请日:2009-06-04

    IPC分类号: B41J2/05

    摘要: Provided is a process of producing a liquid discharge head having a substrate, a passage-forming member, and a patterned layer. The process includes providing a resin layer on a substrate; providing a resist pattern on the resin layer for patterning the resin layer; forming a patterned layer by patterning the resin layer using the resist pattern as a mask; providing a layer for forming a passage pattern having a shape of passage on the resist pattern lying on the patterned layer; forming a passage pattern by patterning the layer for forming a passage pattern; removing the resist pattern; providing a passage-forming member so as to cover the passage pattern and the patterned layer; and removing the passage pattern to give the passage.

    摘要翻译: 提供了一种制造具有基板,通道形成部件和图案化层的排液头的方法。 该方法包括在基底上提供树脂层; 在树脂层上提供抗蚀剂图案,用于图案化树脂层; 通过使用抗蚀剂图案作为掩模对树脂层进行图案化来形成图案层; 提供用于在位于图案化层上的抗蚀剂图案上形成具有通道形状的通道图案的层; 通过图案化形成通道图案的层来形成通道图案; 去除抗蚀剂图案; 提供通道形成构件以覆盖通道图案和图案层; 并且去除通道图案以给出通道。

    Liquid crystal display substrate having TFTS in both an image display area and in a peripheral circuit area
    15.
    发明授权
    Liquid crystal display substrate having TFTS in both an image display area and in a peripheral circuit area 有权
    在图像显示区域和外围电路区域中具有TFTS的液晶显示基板

    公开(公告)号:US06628349B1

    公开(公告)日:2003-09-30

    申请号:US09651876

    申请日:2000-08-30

    IPC分类号: G02F1136

    摘要: A liquid crystal display substrate including gate and drain bus lines that are electrically insulated from each other at cross areas, pixel electrodes between the cross areas, and first thin film transistors connecting corresponding drain bus lines and pixel electrodes. Each first thin film transistor includes a channel region where current flows in a first direction, and first and second impurity doped regions of, respectively, first and second impurity concentrations. The first and second doped regions sandwich the channel region. The second impurity concentration is higher than the first. Also, a second thin film transistor is formed in the peripheral circuit area, and includes a channel region where current flows in a second direction that is perpendicular to the first direction. Third impurity doped regions, disposed on both sides of the channel region, have a third impurity concentration.

    摘要翻译: 一种液晶显示基板,包括在交叉区域彼此电绝缘的栅极和漏极总线,以及交叉区域之间的像素电极和连接相应的漏极总线和像素电极的第一薄膜晶体管。 每个第一薄膜晶体管包括电流沿第一方向流动的沟道区,以及分别为第一和第二杂质浓度的第一和第二杂质掺杂区。 第一和第二掺杂区夹着沟道区。 第二杂质浓度高于第一杂质浓度。 此外,第二薄膜晶体管形成在外围电路区域中,并且包括电流沿与第一方向垂直的第二方向流动的沟道区域。 设置在沟道区两侧的第三杂质掺杂区具有第三杂质浓度。

    MANAGEMENT METHOD AND MANAGEMENT SYSTEM FOR MAINTENANCE AND INSPECTION INFORMATION
    16.
    发明申请
    MANAGEMENT METHOD AND MANAGEMENT SYSTEM FOR MAINTENANCE AND INSPECTION INFORMATION 审中-公开
    维护和检查信息管理方法与管理系统

    公开(公告)号:US20140229448A1

    公开(公告)日:2014-08-14

    申请号:US14349510

    申请日:2012-08-23

    IPC分类号: G06F11/34

    摘要: A method of managing information used for maintenance and inspection of an apparatus includes collecting an apparatus operation history information with respect to an operation condition of the apparatus; updating the apparatus operation history information each time a maintenance and inspection service is implemented, and storing the updated information as a maintenance and inspection unitary cumulative history information until a next maintenance and inspection service; and analyzing the maintenance and inspection unitary cumulative history information by comparing the maintenance and inspection unitary cumulative history information before the maintenance and inspection service and the maintenance and inspection unitary cumulative history information after the maintenance and inspection service.

    摘要翻译: 一种管理用于设备的维护和检查的信息的方法包括:收集关于设备的操作条件的设备操作历史信息; 在每次实施维护和检查服务时更新设备操作历史信息,并将更新的信息存储为维护和检查单一累积历史信息,直到下一个维护和检查服务; 以及通过比较维护和检查服务之前的维护和检查单一累积历史信息与维护和检查服务之后的维护和检查单位累积历史信息来分析维护和检查单一累积历史信息。

    CONTROL METHOD AND CONTROL SYSTEM FOR PARALLEL OPERATION OF DIFFERENT TYPES OF POWER GENERATION APPARATUSES
    18.
    发明申请
    CONTROL METHOD AND CONTROL SYSTEM FOR PARALLEL OPERATION OF DIFFERENT TYPES OF POWER GENERATION APPARATUSES 有权
    不同发电装置并联运行的控制方法与控制系统

    公开(公告)号:US20140152112A1

    公开(公告)日:2014-06-05

    申请号:US14127250

    申请日:2012-06-19

    IPC分类号: H02J3/46

    摘要: A parallel operation control method for different type power generation apparatuses to shift the power generation apparatuses having respective different drooping characteristics, in which the drooping characteristic is defined as a characteristic of decrease of a rated frequency along with an increase of a load, from independent operation of the power generation apparatuses under suitable drooping characteristics to parallel operation thereof to drive a common drive target, includes determining a load of one of the power generation apparatuses by subtracting a load of the other of the power generation apparatuses from a predetermined required load; changing a drooping characteristic of the one of the power generation apparatuses so as to coincide with a drooping characteristic of the other of the power generation apparatuses; and controlling the one of the power generation apparatuses so as to maintain frequency at the time of changing the drooping characteristic.

    摘要翻译: 一种用于不同类型发电装置的并联运行控制方法,用于将具有各种不同下垂特性的发电装置从其独立运行中移除,其中下降特性被定义为额定频率随着负载的增加而降低的特性 的发电装置的并联运行以驱动公共驱动目标,包括通过从预定的所需负载减去另一个所述发电装置的负载来确定所述发电装置中的一个的负载; 改变所述一个发电装置的下垂特性,以便与另一个所述发电装置的下垂特性一致; 并且控制发电装置之一,以便在改变下垂特性时保持频率。

    Liquid-ejection head and method for manufacturing liquid-ejection head substrate
    19.
    发明授权
    Liquid-ejection head and method for manufacturing liquid-ejection head substrate 有权
    液体喷射头和液体喷射头基板的制造方法

    公开(公告)号:US08366950B2

    公开(公告)日:2013-02-05

    申请号:US12204802

    申请日:2008-09-05

    IPC分类号: G01D15/00

    摘要: A method for manufacturing a liquid-ejection head substrate including a silicon substrate having a supply port for supplying liquid is provided. The method includes: forming an etching mask layer on a surface of the silicon substrate, the etching mask layer having an opening in a portion corresponding to the supply port; forming a first recess in the surface of the silicon substrate by anisotropically etching the silicon substrate through the opening in the etching mask layer; forming a second recess that extends toward the other surface of the silicon substrate, in a surface of the first recess in the silicon substrate; and forming the supply port by anisotropically etching the silicon substrate from the surface provided with the second recess.

    摘要翻译: 提供一种制造包括具有用于供应液体的供给口的硅基板的液体喷射头基板的方法。 该方法包括:在硅衬底的表面上形成蚀刻掩模层,该蚀刻掩模层在与供给口对应的部分中具有开口; 通过在蚀刻掩模层中的开口各向异性蚀刻硅衬底,在硅衬底的表面中形成第一凹槽; 形成在所述硅衬底的所述第一凹部的表面中朝向所述硅衬底的另一表面延伸的第二凹部; 以及通过从设置有所述第二凹部的表面各向异性地蚀刻所述硅衬底而形成所述供给口。

    LIQUID EJECTION HEAD AND METHOD FOR PRODUCING THE SAME
    20.
    发明申请
    LIQUID EJECTION HEAD AND METHOD FOR PRODUCING THE SAME 有权
    液体喷射头及其制造方法

    公开(公告)号:US20120026246A1

    公开(公告)日:2012-02-02

    申请号:US13188211

    申请日:2011-07-21

    IPC分类号: B41J2/135 C23F1/02

    摘要: A liquid ejection head includes a substrate having an energy-generating device configured to generate energy used for ejecting a liquid from an orifice; a transparent channel wall member forming an inner wall of a channel leading to the orifice; and an intermediate layer disposed between and in contact with a surface of the substrate and the channel wall member and having a refractive index different from a refractive index of the channel wall member. The intermediate layer has a first outer end surface forming contours of a symbol as viewed in a direction from the orifice toward the substrate and making a first angle with the surface of the substrate and a second outer end surface facing the channel and making a second angle with the surface of the substrate. The first angle is an obtuse angle. The second angle is smaller than the first angle.

    摘要翻译: 液体喷射头包括具有能量产生装置的基板,该能量产生装置被配置为产生用于从孔口喷射液体的能量; 形成通向所述孔口的通道的内壁的透明通道壁构件; 以及中间层,其设置在所述基板和所述通道壁构件的表面之间并且与所述通道壁构件的表面接触并且具有与所述通道壁构件的折射率不同的折射率。 所述中间层具有第一外端表面,其形成从沿着所述孔朝向所述基板的方向观察的符号轮廓,并且与所述基板的表面形成第一角度,以及与所述通道相对的第二外端表面,并形成第二角度 与基板的表面。 第一个角度是钝角。 第二角度小于第一角度。