公开(公告)号：US20160240518A1

公开(公告)日：2016-08-18

申请号：US15042151

申请日：2016-02-12

Applicant: NICHIA CORPORATION

Inventor： Masaki HAYASHI ,  Yuki SHIOTA ,  Junya NARITA ,  Keisuke KURASHITA ,  Takanori AKAISHI

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/56 ,  H01L33/48

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/18 ,  H01L33/20 ,  H01L33/486 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10156 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Each of a plurality of light emitting elements has a polygonal shape with five or more corners. An interior angle at each of the corners is less than 180°. The plurality of light emitting elements include a first light emitting element having a first bottom surface, a first top surface opposite to the first bottom surface, and a first lateral side surface between the first bottom surface and the first top surface. The second light emitting element has a second bottom surface, a second top surface opposite to the second bottom surface, and a second lateral side surface between the second bottom surface and the second top surface. The second lateral side surface is provided not to oppose to the first lateral side surface in substantially parallel.

Abstract translation: 多个发光元件中的每一个都具有五角或更多角的多边形。 每个拐角处的内角小于180°。 多个发光元件包括具有第一底表面的第一发光元件，与第一底表面相对的第一顶表面，以及在第一底表面和第一顶表面之间的第一横向侧表面。 第二发光元件具有第二底表面，与第二底表面相对的第二顶表面，以及在第二底表面和第二顶表面之间的第二横向侧表面。 第二横向侧表面设置成不与第一横向侧表面大致平行地相对。

公开(公告)号：US20140306265A1

公开(公告)日：2014-10-16

申请号：US14314516

申请日：2014-06-25

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC: H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract translation: 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US20130285109A1

公开(公告)日：2013-10-31

申请号：US13831138

申请日：2013-03-14

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/20

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在与蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US20240079517A1

公开(公告)日：2024-03-07

申请号：US18507177

申请日：2023-11-13

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L21/268

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US20200303357A1

公开(公告)日：2020-09-24

申请号：US16897270

申请日：2020-06-10

Applicant: NICHIA CORPORATION

Inventor： Masaki HAYASHI ,  Yuki SHIOTA ,  Junya NARITA ,  Keisuke KURASHITA ,  Takanori AKAISHI

IPC: H01L25/075

Abstract: Each of a plurality of light emitting elements has a hexagonal shape with a center. An interior angle at each of corners is less than 180°. The plurality of light emitting elements include a first light emitting element having a first lateral side surface and a second light emitting element having a second lateral side surface. An orientation of the hexagonal shape of the second light emitting element is rotated by 30 degrees plus 30°+60°×N (N is an integer) with respect to the center of the second light emitting element relative to an orientation of the hexagonal shape of the first light emitting element such that the second lateral side surface is not parallel to the first lateral side surface.

公开(公告)号：US20180287009A1

公开(公告)日：2018-10-04

申请号：US15941402

申请日：2018-03-30

Applicant: NICHIA CORPORATION

Inventor： Kazuhiro NAGAMINE ,  Yoshiki INOUE ,  Susumu TOKO ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/44 ,  H01L33/42

Abstract: A method of manufacturing a plurality of light emitting elements, the method includes: providing a semiconductor wafer; dividing the p-side nitride semiconductor layer into a plurality of demarcated element regions; forming a protective layer on regions including an outer periphery of an upper surface of the p-side nitride semiconductor layer of each of the plurality of demarcated element regions and exposed side surfaces in the semiconductor structure that are formed by the selectively removing the portion of the p-side nitride semiconductor layer; reducing a resistance of regions of the p-side nitride semiconductor layer; and dividing the semiconductor wafer into a plurality of light emitting elements.

公开(公告)号：US20180175238A1

公开(公告)日：2018-06-21

申请号：US15842655

申请日：2017-12-14

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L33/0095 ,  H01L21/268 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0025

Abstract: A method for manufacturing a plurality of light emitting elements includes: providing a semiconductor wafer comprising: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer; forming a protective layer on an upper face of the p-side nitride semiconductor layer in regions that include borders of areas to become the plurality of light emitting elements; reducing a resistance of the p-side nitride semiconductor in areas where no protective layer has been formed by annealing the semiconductor wafer; irradiating a laser beam on the substrate so as to form modified regions in the substrate; and obtaining a plurality of light emitting elements by dividing the semiconductor wafer in which the modified regions have been formed in the substrate.

公开(公告)号：US20130146892A1

公开(公告)日：2013-06-13

申请号：US13759892

申请日：2013-02-05

Applicant: Nichia Corporation

Inventor： Shunsuke MINATO ,  Junya NARITA ,  Yohei WAKAI ,  Yukio NARUKAWA ,  Motokazu YAMADA

IPC: H01L33/32

CPC classification number: H01L33/24 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/00

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

Abstract translation: 提供了在基板上具有凹凸结构的发光元件。 半导体发光元件100在基板10的第一主表面上具有半导体20的发光结构。基板10的第一主表面具有基板突出部11，每个突起的底表面14比 顶表面13处于横截面，或者顶表面13以衬底的顶视图包括在底表面14中。 底面14具有近似多边形的形状，并且顶面13具有大致圆形或多边形形状，其侧面比底面14多。