公开(公告)号：US20230343892A1

公开(公告)日：2023-10-26

申请号：US18343078

申请日：2023-06-28

Applicant: NICHIA CORPORATION

Inventor： Yoshiki INOUE ,  Shun KITAHAMA ,  Yoshiyuki AIHARA ,  Yoshiki MATSUSHITA ,  Keisuke HIGASHITANI

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/507 ,  H01L33/22 ,  H01L2933/0041

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US20210193867A1

公开(公告)日：2021-06-24

申请号：US17113583

申请日：2020-12-07

Applicant: NICHIA CORPORATION

Inventor： Yoshiki INOUE ,  Shun KITAHAMA ,  Yoshiyuki AIHARA ,  Yoshiki MATSUSHITA ,  Keisuke HIGASHITANI

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/50

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US20190259916A1

公开(公告)日：2019-08-22

申请号：US16280045

申请日：2019-02-20

Applicant: NICHIA CORPORATION

Inventor： Daisuke IWAKURA ,  Yoshiki INOUE

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  C09K11/77 ,  C09K11/61 ,  C09K11/64

Abstract: A light emitting device includes a light-transmissive member including a first surface, a second surface opposite to the first surface, and third surfaces connected to the first surface and the second surface. A phosphor layer faces the second surface of the light-transmissive member. A reflective member faces side surfaces of the phosphor layer and the third surfaces of the light-transmissive member. The light-emitting element has a top surface facing the phosphor layer, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface. The phosphor layer has a bonding surface facing the light emitting element. A first dielectric multilayer film is arranged on at least one of side surfaces of the light-emitting element without being provided on the bonding surface of the phosphor layer.

公开(公告)号：US20180287009A1

公开(公告)日：2018-10-04

申请号：US15941402

申请日：2018-03-30

Applicant: NICHIA CORPORATION

Inventor： Kazuhiro NAGAMINE ,  Yoshiki INOUE ,  Susumu TOKO ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/44 ,  H01L33/42

Abstract: A method of manufacturing a plurality of light emitting elements, the method includes: providing a semiconductor wafer; dividing the p-side nitride semiconductor layer into a plurality of demarcated element regions; forming a protective layer on regions including an outer periphery of an upper surface of the p-side nitride semiconductor layer of each of the plurality of demarcated element regions and exposed side surfaces in the semiconductor structure that are formed by the selectively removing the portion of the p-side nitride semiconductor layer; reducing a resistance of regions of the p-side nitride semiconductor layer; and dividing the semiconductor wafer into a plurality of light emitting elements.

公开(公告)号：US20180175238A1

公开(公告)日：2018-06-21

申请号：US15842655

申请日：2017-12-14

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L33/0095 ,  H01L21/268 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0025

Abstract: A method for manufacturing a plurality of light emitting elements includes: providing a semiconductor wafer comprising: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer; forming a protective layer on an upper face of the p-side nitride semiconductor layer in regions that include borders of areas to become the plurality of light emitting elements; reducing a resistance of the p-side nitride semiconductor in areas where no protective layer has been formed by annealing the semiconductor wafer; irradiating a laser beam on the substrate so as to form modified regions in the substrate; and obtaining a plurality of light emitting elements by dividing the semiconductor wafer in which the modified regions have been formed in the substrate.

公开(公告)号：US20210296526A1

公开(公告)日：2021-09-23

申请号：US17338446

申请日：2021-06-03

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US20200152843A1

公开(公告)日：2020-05-14

申请号：US16682062

申请日：2019-11-13

Applicant: NICHIA CORPORATION

Inventor： Yoshiki INOUE ,  Naoto FURUHA ,  Tadaaki IKEDA

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/38 ,  H01L33/62 ,  H01L25/075

Abstract: A light emitting element includes: a light reflecting member including a first region and a second region; a first semiconductor layered body disposed between the first region and the second region and configured to emit first light having a first peak wavelength; a second semiconductor layered body disposed between the first semiconductor layered body and the second region and configured to emit second light having a second peak wavelength different from the first peak wavelength; a base member disposed between the first semiconductor layered body and the second semiconductor layered body; and a wavelength conversion member on which the first light and the second light is incident, the wavelength conversion member producing third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.

公开(公告)号：US20200075797A1

公开(公告)日：2020-03-05

申请号：US16677287

申请日：2019-11-07

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

公开(公告)号：US20170018694A1

公开(公告)日：2017-01-19

申请号：US15210302

申请日：2016-07-14

Applicant: NICHIA CORPORATION

Inventor： Keiji EMURA ,  Yoshiki INOUE ,  Hiroaki KAGEYAMA

IPC: H01L33/58 ,  H01L33/24 ,  H01L33/60 ,  H01L33/50 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/382 ,  H01L33/387 ,  H01L33/504

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract translation: 提供了一种具有改善的发光强度分布的发光元件和发光器件。 发光元件包括透光性基板，n型半导体层，第一p型半导体层，第一p侧电极，第一n侧电极，第二p型半导体层，第二p型半导体层 p侧电极和第二n侧电极。 发光装置包括发光元件和设置在发光元件的与透光性基板相反的一侧的外部连接电极。 外部连接电极包括连接到第一n侧电极和第二n侧电极的n侧外部连接电极，连接到第一p侧电极的第一p侧外部连接电极和第二p侧电极， 连接到第二p侧电极的侧面外部连接电极。

公开(公告)号：US20150270443A1

公开(公告)日：2015-09-24

申请号：US14734961

申请日：2015-06-09

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/10 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract translation: 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。