lll-phosphide light emitting devices with thin active layers
    15.
    发明授权
    lll-phosphide light emitting devices with thin active layers 有权
    具有薄活性层的磷化铟发光器件

    公开(公告)号:US07087941B2

    公开(公告)日:2006-08-08

    申请号:US10011521

    申请日:2001-11-05

    IPC分类号: H01L31/72

    摘要: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.

    摘要翻译: 通过使吸收装置层尽可能薄,可以提高发光装置的提取效率。 内部量子效率随着器件层变薄而减小。 最佳活性层厚度平衡两种效果。 AlGaInP LED包括基板和包括第一导电类型的AlGaInP下约束层,第二导电类型的AlGaInP有源区和第二导电类型的AlGaInP上约束层的器件层。 有源区的吸光度是发光器件中总吸光度的至少五分之一。 该装置可选地包括至少一个插入限制层和活性区域中的一个AlGaInP的后置层。 可以用氧掺杂p型上约束层提高可靠性。

    Advanced semiconductor devices fabricated with passivated high aluminum
content III-V materials
    17.
    发明授权
    Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials 有权
    先进的半导体器件采用钝化的高铝含量III-V材料制成

    公开(公告)号:US6048748A

    公开(公告)日:2000-04-11

    申请号:US293277

    申请日:1999-04-16

    摘要: For AlGaAs LEDs the confining layers adjoining the active layer possess the highest Al composition. From failure analysis of non-passivated, WHTOL-aged, AlGaAs LEDs, it was discovered that corrosion occurs the fastest at the exposed surfaces of the high Al-content confining layers. By placing a high-quality native oxide at the exposed surfaces of the high Al-content confining layers which protect from the formation of the `poor` oxide, it is possible for LEDs to retain essentially their same light output after 2,000 hours of WHTOL testing. Further, it is possible to improve carrier confinement, carrier injection, wave guiding, and other properties by increasing the Al-content of different layers.

    摘要翻译: 对于AlGaAs LED,与活性层相邻的限制层具有最高的Al组成。 从未钝化的WHTOL老化AlGaAs LED的故障分析中,发现在高Al含量限制层的暴露表面,腐蚀发生最快。 通过在高Al含量限制层的暴露表面放置高质量的天然氧化物,防止形成“差”氧化物,LED可以在2000小时WHTOL测试后保持基本相同的光输出 。 此外,通过增加不同层的Al含量,可以改善载流子限制,载流子注入,波导等功能。

    Wafer bonding of light emitting diode layers
    19.
    发明授权
    Wafer bonding of light emitting diode layers 失效
    发光二极管层的晶片结合

    公开(公告)号:US5502316A

    公开(公告)日:1996-03-26

    申请号:US542210

    申请日:1995-10-12

    摘要: A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.

    摘要翻译: 形成发光二极管(LED)的方法包括提供临时生长衬底,其被选择用于与制造具有期望的机械特性的LED层的相容性。 例如,晶格匹配是重要的考虑因素。 然后在临时生长衬底上生长LED层。 由此实现了高的晶体质量,之后可以去除临时生长衬底。 使用晶片接合技术将第二基板结合到LED层。 选择第二基板用于光学性能,而不是机械性能。 优选地,第二衬底是光学透明且导电的,并且执行晶片接合技术以实现第二衬底和LED层之间的低电阻界面。 还可以进行晶片结合以提供钝化或光反射或限定电流。

    Wafer bonding of light emitting diode layers
    20.
    发明授权
    Wafer bonding of light emitting diode layers 失效
    发光二极管层的晶片结合

    公开(公告)号:US5376580A

    公开(公告)日:1994-12-27

    申请号:US36532

    申请日:1993-03-19

    摘要: A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.

    摘要翻译: 形成发光二极管(LED)的方法包括提供临时生长衬底,其被选择用于与制造具有期望的机械特性的LED层的相容性。 例如,晶格匹配是重要的考虑因素。 然后在临时生长衬底上生长LED层。 由此实现了高的晶体质量,之后可以去除临时生长衬底。 使用晶片接合技术将第二基板结合到LED层。 选择第二基板用于光学性能,而不是机械性能。 优选地,第二衬底是光学透明且导电的,并且执行晶片接合技术以实现第二衬底和LED层之间的低电阻界面。 还可以进行晶片结合以提供钝化或光反射或限定电流。