公开(公告)号：US20200091372A1

公开(公告)日：2020-03-19

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

公开(公告)号：US10566500B2

公开(公告)日：2020-02-18

申请号：US16307054

申请日：2017-05-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/44 ,  H01L33/38 ,  H01L33/02 ,  H01L33/54 ,  H01L33/62

Abstract: An optoelectronic semiconductor component has a semiconductor body, wherein the semiconductor body includes a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region that generates or receives radiation disposed between the first semiconductor layer and the second semiconductor layer; the semiconductor body has a functional region in which the first semiconductor layer electrically conductively connects to a first terminal layer and the second semiconductor layer electrically conductively connects to a second terminal layer; an isolating layer is arranged on a side of the first terminal layer facing away from the semiconductor body; an interruption is formed in the isolating layer which at least locally delimits an inner subregion of the isolating layer in a lateral direction; the interruption encloses the functional region in the lateral direction; and in a plan view of the semiconductor component, the interruption overlaps with the active region.

公开(公告)号：US20190333898A1

公开(公告)日：2019-10-31

申请号：US16468085

申请日：2018-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plößl ,  Siegfried Herrmann ,  Martin Rudolf Behringer ,  Frank Singer ,  Thomas Schwarz ,  Alexander F. Pfeuffer

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

公开(公告)号：US20190312184A1

公开(公告)日：2019-10-10

申请号：US16335632

申请日：2017-10-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Alexander F. Pfeuffer ,  Britta Göötz ,  Norwin von Malm

IPC: H01L33/50 ,  H01L27/15

Abstract: A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.

公开(公告)号：US10388694B2

公开(公告)日：2019-08-20

申请号：US16065000

申请日：2017-01-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/00 ,  F21S41/141 ,  H01L33/62

Abstract: An optoelectronic component, a lighting apparatus and a car headlight are disclosed. In an embodiment an optoelectronic component includes a radiation side having a plurality of pixels arranged next to each other and a contact side, opposite of the radiation side, having a plurality of first contact structures, wherein a length of each pixel is greater than a width of the pixel, wherein the first contact structures are electrically contacted individually and independently of each other during operation, wherein each pixel is electrically uniquely associated with a first contact structure, and wherein, for each pixel and a pixel directly adjacent thereto, the two first contact structures of these two pixels are arranged differently with respect to the associated pixels so that a translation, which images the pixel in the directly adjacent pixel, does not image the two associated first contact structures congruently into each other.

公开(公告)号：US20180166499A1

公开(公告)日：2018-06-14

申请号：US15578239

申请日：2016-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Dominik Scholz

IPC: H01L27/15 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L33/24 ,  H01L33/382 ,  H01L33/62

Abstract: A display device having a plurality of pixels that can be operated separately from one another is disclosed. In an embodiment the display includes a semiconductor layer sequence and a first contact structure for contacting a first semiconductor layer and a second contact structure for contacting a second semiconductor layer, wherein the first contact structure has first contacts configured to be operated separately from one another, each first contact extending laterally and uninterrupted along the first semiconductor layer and each first contact delimits a pixel in a lateral manner with its contour, wherein the semiconductor layer sequence and the first contact structure have at least one recess laterally bordering a respective pixel, which recess extends through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure has second contacts extending through the at least one recess.

公开(公告)号：US09917230B2

公开(公告)日：2018-03-13

申请号：US15315376

申请日：2015-06-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Norwin von Malm

IPC: H01L29/49 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes a semiconductor layer sequence having a bottom face and a top face, wherein the semiconductor layer sequence comprises a first layer of a first conductivity type, an active layer for generating electromagnetic radiation, and a second layer of a second conductivity type and a bottom contact element located at the bottom face and a top contact element located at the top face for injecting current into the semiconductor layer sequence. The chip further includes a current distribution element located at the bottom face, the current distribution element distributes current along the bottom face during operation and a plurality of vias extending from the current distribution element through the first layer and through the active layer into the semiconductor layer sequence, wherein the vias are not in direct electrical contact with the active layer.

公开(公告)号：US09899418B2

公开(公告)日：2018-02-20

申请号：US14652089

申请日：2013-11-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Norwin Von Malm

IPC: H01L27/12 ,  H01L25/16 ,  H01L27/15 ,  H01L25/075 ,  H01L33/24 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/1222 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/1274 ,  H01L27/156 ,  H01L33/24 ,  H01L33/382 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a display device, comprising a layer stack, which comprises a semiconductor layer sequence having an active region for producing radiation and comprises a circuit layer. The semiconductor layer sequence forms a plurality of pixels. For each pixel, a respective switch connected in an electrically conductive manner to the pixel is formed in the circuit layer. The invention further relates to a method for producing a display device.

公开(公告)号：US20160133794A1

公开(公告)日：2016-05-12

申请号：US14987905

申请日：2016-01-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L33/44 ,  H01L33/14 ,  H01L27/15 ,  H01L33/20 ,  H01L33/60 ,  H01L33/32

CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

Abstract translation: 光电子半导体芯片包括彼此间隔一定距离的多个有源区和连续电流扩散层，其中至少一个有源区具有主延伸方向，有源区中的一个具有形成有 所述有源区具有至少在所述有源区的主延伸方向的横向方向上至少覆盖所述芯区的有源层，所述有源区具有形成有第二半导体材料并覆盖所述有源区的覆盖层 至少在相对于有源区域的主延伸方向横向的方向上，并且电流扩展层覆盖有源区域的所有覆盖层。

公开(公告)号：US09257611B2

公开(公告)日：2016-02-09

申请号：US14362155

申请日：2012-11-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L29/18 ,  H01L33/44 ,  H01L33/18 ,  H01L33/24 ,  H01L27/15 ,  H01L33/60 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.

Abstract translation: 光电子半导体芯片包括彼此间隔设置的多个有源区和布置在多个有源区的下侧的反射层，其中至少一个有源区具有主延伸方向， 所述有源区具有形成有第一半导体材料的芯区，所述有源区具有有源层，至少在相对于所述有源区的主延伸方向横向的方向上覆盖所述芯区，所述有源区具有覆盖层 形成有第二半导体材料，并且至少在相对于有源区的主延伸方向横向的方向上覆盖有源层，并且反射层反射在有源层中操作期间产生的电磁辐射。