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公开(公告)号：US10121775B2
公开(公告)日：2018-11-06
申请号：US15038034
申请日：2014-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Berthold Hahn , Karl Engl , Johannes Baur , Siegfried Herrmann , Andreas Ploessl , Simeon Katz , Tobias Meyer , Lorenzo Zini , Markus Maute
Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.
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公开(公告)号：US20180076370A1
公开(公告)日：2018-03-15
申请号：US15565239
申请日：2016-04-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Haushalter , Frank Singer , Thomas Schwarz , Andreas Ploessl
CPC classification number: H01L33/642 , H01L33/005 , H01L33/486 , H01L33/60 , H01L33/62 , H01L33/647 , H01L2224/48091 , H01L2924/00014
Abstract: A light-emitting component includes a light-emitting chip and a housing including a plastic body and a reflector, the reflector includes an electrically conductive layer, the light-emitting chip includes a top side and an underside, the underside of the light-emitting chip is arranged on the plastic body, an electrical terminal on the top side of the light-emitting chip electrically conductively connects to the reflector by a bond wire, the underside of the light-emitting chip and the reflector are electrically insulated from one another, a conduction region is provided within the plastic body, thermal conductivity of the conduction region is greater than thermal conductivity of the plastic body, the conduction region adjoins the underside of the light-emitting chip, and the conduction region extends from the side of the plastic body facing the light-emitting chip as far as the side of the plastic body facing away from the light-emitting chip.
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公开(公告)号：US08969175B2
公开(公告)日：2015-03-03
申请号：US13974991
申请日：2013-08-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andreas Ploessl , Heribert Zull
IPC: H01L21/78 , H01L21/304 , H01L31/18 , H01L21/66 , H01L33/00 , H01L33/20 , H01L31/0687
CPC classification number: H01L21/78 , H01L22/12 , H01L31/06875 , H01L31/18 , H01L33/0095 , H01L33/20 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , H01L2924/00
Abstract: A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The depressions are arranged in the region of the semiconductor components to be produced. Walls present between the depressions are arranged in the region of separating regions provided for severing the starting substrate. The method furthermore comprises forming a metallic layer on the side of the starting substrate with the depressions and walls and carrying out a further etching process for severing the starting substrate in the separating regions and forming the singulated semiconductor components.
Abstract translation: 一种制备单片半导体元件的方法包括提供起始衬底。 进行蚀刻处理以在起始衬底的一侧形成凹陷。 凹陷被布置在要制造的半导体部件的区域中。 存在于凹部之间的壁布置在用于切断起始衬底的分离区域中。 该方法还包括在起始衬底的侧面上形成具有凹陷和壁的金属层，并进行进一步的蚀刻工艺，以分离分离区域中的起始衬底并形成单个化的半导体组件。
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公开(公告)号：US20140080287A1
公开(公告)日：2014-03-20
申请号：US14002754
申请日：2012-03-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Heribert Zull , Korbinian Perzlmaier , Andreas Ploessl , Thomas Veit , Mathias Kampf , Jens Dennemarck , Bernd Bohm
IPC: H01L21/683 , H01L21/78
CPC classification number: H01L21/6836 , H01L21/78 , H01L21/7806 , H01L21/782 , H01L21/784 , H01L31/18 , H01L33/0079 , H01L33/0095 , H01S5/0201
Abstract: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.
Abstract translation: 一种方法涉及将组分复合材料分离成多个组分区域，其中所述组分复合材料具有包括用于产生或用于接收电磁辐射的区域的半导体层序列。 组件复合材料安装在刚性副载波上。 组分复合材料被分离成多个组分区域，其中从每个组分区域的半导体层序列产生一个半导体本体。 从子载波去除分量区域。
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公开(公告)号：US10147696B2
公开(公告)日：2018-12-04
申请号：US15514524
申请日：2015-09-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andreas Ploessl
IPC: H01L23/488 , H01L23/00 , H01L33/40 , H01L33/62 , H01L23/15 , H01L23/498 , H01L23/495
Abstract: An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.
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Patent Agency Ranking
16.发明申请METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR DEVICE AND LIGHT-EMITTING SEMICONDUCTOR DEVICE 审中-公开用于生产发光半导体器件和发光半导体器件的方法公开(公告)号：US20150228870A1
公开(公告)日：2015-08-13
申请号：US14423432
申请日：2013-08-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Britta Goeoetz , Juergen Moosburger , Andreas Ploessl , Matthias Sabathil
CPC classification number: H01L33/56 , H01L33/0066 , H01L33/50 , H01L33/501 , H01L2933/0041
Abstract: A method is specified for producing a light-emitting semiconductor component, in which method a light-emitting semiconductor layer sequence (2) with an active layer (3) that is designed to emit light during operation of the semiconductor component is provided, a wavelength conversion layer (4) containing at least one wavelength conversion material is applied on the semiconductor layer sequence (2), and a ceramic layer (5) is applied on the wavelength conversion layer (4) by means of an aerosol deposition process. A light-emitting semiconductor component is also specified.
Abstract translation: 一种制造发光半导体部件的方法，其中提供了在半导体部件的工作过程中设计成发光的有源层（3）的发光半导体层序列（2），波长 将包含至少一种波长转换材料的转换层（4）施加在半导体层序列（2）上，并通过气溶胶沉积工艺将陶瓷层（5）施加到波长转换层（4）上。 还指定了发光半导体组件。
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公开(公告)号：US11222992B2
公开(公告)日：2022-01-11
申请号：US16041343
申请日：2018-07-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Stephan Kaiser , Andreas Ploessl
Abstract: An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer.
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公开(公告)号：US10361350B2
公开(公告)日：2019-07-23
申请号：US15735587
申请日：2016-06-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andreas Ploessl
Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the component includes a semiconductor chip, a molded body and an electrical through-contact constituting an electrically conductive connection through the molded body. The through-contact and the semiconductor chip are embedded alongside one another and are spaced apart in the molded body. A first contact pad of the through-contact is arranged at an underside of the molded body. A second contact pad of the through-contact is arranged at a top side of the molded body. The second contact pad is electrically conductively connected to the electrical contact of the semiconductor chip. The through-contact is arranged such that a molded body is arranged at least in a section between the first and second contact pads on a straight line between the first and second contact pads.
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19.发明授权公开(公告)号：US10242974B2
公开(公告)日：2019-03-26
申请号：US15113749
申请日：2015-01-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Lutz Hoeppel , Juergen Moosburger , Andreas Ploessl , Patrick Rode , Peter Nagel , Dominik Scholz
IPC: H01L33/00 , H01L31/12 , H01L29/267 , H01L27/15 , H01L25/16 , H01L33/48 , H01L25/00 , H01L31/0232 , H01L31/147 , H01L31/18 , H01L33/58
Abstract: A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).
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公开(公告)号：US20180331254A1
公开(公告)日：2018-11-15
申请号：US16041343
申请日：2018-07-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Stephan Kaiser , Andreas Ploessl
CPC classification number: H01L33/0079 , H01L33/20 , H01L33/405 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer
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