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11.发明申请公开(公告)号：US20180366616A1
公开(公告)日：2018-12-20
申请号：US16061358
申请日：2016-12-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Walter , Roland Enzmann , Markus Horn , Jan Seidenfaden
Abstract: A carrier for an optoelectronic component includes a main body, wherein the main body includes a first electrically conductive heating layer arrangement, a first solder layer for soldering an optoelectronic component to the main body is arranged on a first side of the main body, the first electrically conductive heating layer arrangement is electrically insulated from the first solder layer and thermally connected to the first solder layer, and the first heating layer arrangement has an exposed portion on which molten solder of the first solder layer can flow to reduce an electrical resistance of the first heating layer arrangement.
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公开(公告)号：US20180309263A1
公开(公告)日：2018-10-25
申请号：US15768049
申请日：2016-10-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Karsten Auen , Markus Horn , Roland Enzmann
CPC classification number: H01S5/005 , H01L33/483 , H01L33/486 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2933/0033 , H01L2933/005 , H01S5/02212 , H01S5/02288 , H01S5/02292 , H01S5/4025
Abstract: An arrangement includes a conversion element, an optoelectronic semiconductor component and a first carrier including a carrier plane, wherein the conversion element is arranged on the carrier plane, the optoelectronic semiconductor component emits a first electromagnetic radiation including a first beam direction and a first wavelength from a first spectral range during operation, the first electromagnetic radiation is directed onto the conversion element, the conversion element at least partly converts the first electromagnetic radiation into a second electromagnetic radiation including a second wavelength from a second spectral range, the first beam direction of the optoelectronic semiconductor component is oriented at an inclination with respect to the carrier plane, a housing including a housing cap is provided, the housing cap is configured in a hollow-body-like fashion, the housing cap and the carrier define an interior, the conversion element and the semi-conductor component are arranged in the interior, and the housing cap includes a coupling-out window that couples out the second electromagnetic radiation.
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Patent Agency Ranking
公开(公告)号：US09608401B2
公开(公告)日：2017-03-28
申请号：US14653698
申请日：2013-12-17
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Roland Enzmann , Markus Horn , Markus Graul , Thomas Veit , Juergen Dachs , Stefan Listl , Markus Arzberger
CPC classification number: H01S5/0201 , H01S5/0202 , H01S5/0206 , H01S5/02236 , H01S5/0226 , H01S5/02268 , H01S5/02272 , H01S5/323 , H01S5/32333
Abstract: Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.
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公开(公告)号：US09559491B2
公开(公告)日：2017-01-31
申请号：US14910813
申请日：2014-08-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Markus Horn , Bernhard Stojetz
CPC classification number: H01S5/02469 , H01S5/0222 , H01S5/02248 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/4018 , H01S5/4031
Abstract: A laser component includes a laser chip having a top side, an underside, a first side surface and a second side surface, which are oriented parallel to a resonator of the laser chip, wherein an underside of the laser chip is arranged in a manner bearing on a carrier, a top side of the laser chip is arranged in a manner bearing on a further carrier, the laser chip is hermetically tightly encapsulated between the carrier and the further carrier, a second electrical contact pad of the laser chip, said second electrical contact pad being formed on the top side of the laser chip, electrically conductively connects to a second electrical mating contact pad formed on the further carrier, and the first side surface of the laser chip thermally conductively connects to a heat sink.
Abstract translation: 激光组件包括具有平行于激光芯片的谐振器的顶侧，下侧，第一侧表面和第二侧表面的激光芯片，其中激光芯片的下侧以轴承方式布置 在载体上，激光芯片的顶侧以与另一个载体相关的方式布置，激光芯片气密地封装在载体和另外的载体之间，激光芯片的第二电接触焊盘，所述第二电极 接触垫形成在激光芯片的顶侧，导电地连接到形成在另一个载体上的第二电配合接触焊盘，并且激光芯片的第一侧表面热传导地连接到散热器。
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公开(公告)号：US09537285B2
公开(公告)日：2017-01-03
申请号：US14787680
申请日：2014-04-25
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Markus Horn , Andreas Rozynski , Karsten Auen , Stephan Haneder , Thomas Dobbertin
CPC classification number: H01S5/02292 , H01S5/02212 , H01S5/0222 , H01S5/02236 , H01S5/02248 , H01S5/02476 , H01S5/32341 , H01S5/4025 , H01S5/4087
Abstract: Laser diode apparatus, comprising a carrier (1) having a carrier top (11), a laser diode chip (4) arranged on the carrier top (11) emitting, during operation, electromagnetic radiation through a radiating face (5), which radiating face (5) runs perpendicularly to the carrier top (11), and at least one optical element (6) to deflect at least some of the electromagnetic radiation radiated by the laser diode chip (4) perpendicularly to the carrier top (11). By the use of a plurality of laser diode chips having wavelengths that differ very slightly from one another, speckles can be reduced. By means of a retarder plate (8) between the laser diode chip and the optical element it is possible to influence the polarization. A polarization cube enables the deflected light beam bundles to fully cover one another as differently polarized light beam bundles.
Abstract translation: 激光二极管装置，包括具有载体顶部（11）的载体（1），布置在载体顶部（11）上的激光二极管芯片（4），在操作期间通过辐射面（5）发射电磁辐射，辐射面 面（5）垂直于载体顶部（11）延伸，并且至少一个光学元件（6）使由激光二极管芯片（4）辐射的至少一些电磁辐射垂直于载体顶部（11）偏转。 通过使用具有彼此非常微小的波长的多个激光二极管芯片，可以减少斑点。 通过激光二极管芯片和光学元件之间的延迟板（8），可以影响极化。 偏振立方体使得偏转的光束束能够作为不同偏振的光束束彼此完全相互覆盖。
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16.发明授权Method of producing a semiconductor laser element, and semiconductor laser element 有权半导体激光元件的制造方法以及半导体激光元件公开(公告)号：US09450376B2
公开(公告)日：2016-09-20
申请号：US14420411
申请日：2013-08-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Stephan Haneder , Markus Arzberger , Christoph Walter , Tomasz Swietlik , Harald König , Robin Fehse , Mathias Kämpf , Markus Graul , Markus Horn
CPC classification number: H01S5/0201 , H01S5/0202 , H01S5/02268 , H01S5/02272 , H01S5/02276
Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).
Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。
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17.发明申请METHOD OF PRODUCING A SEMICONDUCTOR LASER ELEMENT, AND SEMICONDUCTOR LASER ELEMENT 有权制造半导体激光元件的方法和半导体激光元件公开(公告)号：US20150207293A1
公开(公告)日：2015-07-23
申请号：US14420411
申请日：2013-08-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Stephan Haneder , Markus Arzberger , Christoph Walter , Tomasz Swietlik , Harald König , Robin Fehse , Mathias Kämpf , Markus Graul , Markus Horn
CPC classification number: H01S5/0201 , H01S5/0202 , H01S5/02268 , H01S5/02272 , H01S5/02276
Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).
Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。
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