公开(公告)号：US09627588B2

公开(公告)日：2017-04-18

申请号：US15018845

申请日：2016-02-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Höppel ,  Norwin Von Malm

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/38 ,  H01L31/0232 ,  H01L27/02 ,  H01L29/861 ,  H01L33/44 ,  H01L33/62 ,  H01L31/0224 ,  H01L31/18 ,  H01L33/20

CPC classification number: H01L33/46 ,  H01L27/0248 ,  H01L29/861 ,  H01L31/0224 ,  H01L31/02327 ,  H01L31/186 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02P70/521 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4), arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4), in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

公开(公告)号：US10741996B2

公开(公告)日：2020-08-11

申请号：US15765706

申请日：2016-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer ,  Norwin Von Malm ,  Tilman Ruegheimer ,  Thomas Kippes

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/343 ,  H01S5/022 ,  H01S5/042 ,  H01S5/22 ,  H01S5/40 ,  H01S5/02

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1). The contact surfaces (61, 63) are oriented parallel to a growth direction (G) of the semiconductor layer sequence (2). The semiconductor laser (1) can be surface-mounted without wires.

公开(公告)号：US09537064B2

公开(公告)日：2017-01-03

申请号：US14889837

申请日：2014-05-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Martin Brandl ,  Markus Burger ,  Norwin Von Malm

IPC: H01L33/00 ,  H01L33/50 ,  B29D11/00 ,  F21V9/16 ,  H01L33/54 ,  B29K83/00

CPC classification number: H01L33/505 ,  B29D11/0074 ,  B29D11/00932 ,  B29K2083/00 ,  F21V9/30 ,  H01L33/501 ,  H01L33/508 ,  H01L33/54 ,  H01L2933/0041

Abstract: Disclosed is a method for producing a wavelength conversion element (10) wherein a wavelength conversion layer (100) is provided, the surface thereof is treated with a plasma (50), and the wavelength conversion layer is punched. Also disclosed are a wavelength conversion layer and an optoelectronic component comprising a wavelength conversion layer.

Abstract translation: 公开了一种制造其中提供波长转换层（100）的波长转换元件（10）的方法，其表面用等离子体（50）处理，并且波长转换层被冲压。 还公开了包括波长转换层的波长转换层和光电子部件。

公开(公告)号：US20160351758A1

公开(公告)日：2016-12-01

申请号：US15117177

申请日：2015-01-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Juergen Moosburger ,  Stefan Illek ,  Frank Singer ,  Norwin Von Malm

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/62 ,  H01L33/40 ,  H01L33/48 ,  H01L33/60

CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/405 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic semiconductor component (1) comprising:—an optoelectronic semiconductor chip (2), comprising—a growth substrate (21) having a growth surface (21a),—a layer sequence (22) with a semiconductor layer sequence (221, 222, 223) with an active zone (222) grown on the growth surface (21a),—contact points (29) for electrically contacting the semiconductor layer sequence (221, 222, 223) and—and insulation layer (26), which is formed in an electrically insulting manner—a connection carrier (4), which is mounted to the cover surface (2a) of the optoelectronic semiconductor chip facing away from the growth surface (21a), wherein—the semiconductor layer sequence (221, 222, 223) is connected to the connection carrier (4) in an electrically conducting manner and—a conversion layer (5) is applied to a bottom surface (21c) of the growth substrate (21) facing away from the growth surface (21a) and to all side surfaces (21b) of the growth substrate (21).

Abstract translation: 本发明涉及一种光电子半导体元件（1），它包括： - 一个光电半导体芯片（2），包括 - 具有生长表面（21a）的生长衬底（21）， - 具有半导体层序列 （221,222,223），其具有在生长表面（21a）上生长的活性区（222）， - 用于与半导体层序列（221,222,223）和绝缘层（26）电接触的接触点（29） ），其以电绝缘方式形成 - 连接载体（4），其安装到远离生长表面（21a）的光电子半导体芯片的覆盖表面（2a）上，其中半导体层序列 221,222,223）以导电方式连接到连接载体（4），并且将转换层（5）施加到生长衬底（21）的背离生长表面的底表面（21c） （21a）和生长基质的所有侧表面（21b） e（21）。

公开(公告)号：US20150255685A1

公开(公告)日：2015-09-10

申请号：US14430893

申请日：2013-09-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Siegfried Herrmann ,  Norwin Von Malm

IPC: H01L33/46 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic component and a method for producing an optoelectronic component, wherein a layer structure having a positively doped semiconductor layer (2 or 3) and a negatively doped semiconductor layer (3 or 2) with an active zone for generating light, and a mirror layer (4) is grown on a growth substrate, wherein the layer structure is fixed on a first side of a carrier (10) by means of a connecting layer (8) and wherein electrical contacts for the layer structure are introduced via a second side of the carrier (10) and the growth substrate is removed.

Abstract translation: 本发明涉及一种光电子部件和一种用于制造光电子部件的方法，其中具有正掺杂半导体层（2或3）和负掺杂半导体层（3或2）的层结构具有用于产生光的有源区， 并且在生长衬底上生长镜层（4），其中所述层结构通过连接层（8）固定在载体（10）的第一侧上，并且其中所述层结构的电接触经由 移除载体（10）的第二侧和生长基板。