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公开(公告)号：US09972748B2
公开(公告)日：2018-05-15
申请号：US14927325
申请日：2015-10-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Anton Vogl , Andreas Biebersdorf , Rainer Butendeich , Christian Rumbolz
CPC classification number: H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L2933/0091
Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.
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公开(公告)号：US20170324001A1
公开(公告)日：2017-11-09
申请号：US15656169
申请日：2017-07-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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公开(公告)号：US10418355B2
公开(公告)日：2019-09-17
申请号：US15671772
申请日：2017-08-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC: H01L27/02 , H01L33/02 , H01L31/0236 , H01L31/0304 , H01L31/0352 , H01L33/06 , H01L33/08 , H01L33/32 , H01L27/15 , H01L33/24
Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
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公开(公告)号：US10388828B2
公开(公告)日：2019-08-20
申请号：US15656169
申请日：2017-07-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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公开(公告)号：US09799797B2
公开(公告)日：2017-10-24
申请号：US15287140
申请日：2016-10-06
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC: H01L29/06 , H01L33/06 , H01L33/32 , H01L33/04 , H01L33/14 , H01L33/38 , H01L33/24 , H01L33/00 , H01L33/22
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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Patent Agency Ranking
公开(公告)号：US09746141B2
公开(公告)日：2017-08-29
申请号：US14423026
申请日：2013-08-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Rainer Butendeich , Matthias Sabathil
IPC: F21V9/00 , F21K99/00 , H01L25/075 , H01L33/50 , H05B33/14 , F21V9/16 , F21K9/64 , F21Y115/10 , F21Y113/13
CPC classification number: F21V9/30 , F21K9/64 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L33/504 , H01L2924/0002 , H05B33/14 , H01L2924/00
Abstract: An arrangement (1) for generating white light (5), having at least two light-emitting diodes, wherein the first diode (2) is designed to generate blue light, wherein a conversion element (4) is associated with the first diode, wherein the conversion element is designed to convert a part of the blue light from the first diode into green light, and wherein the conversion element is designed to convert a part of the blue light from the first diode into red light, wherein the second diode (3) is provided to emit red light.
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17.发明授权公开(公告)号：US09583670B2
公开(公告)日：2017-02-28
申请号：US15036893
申请日：2014-11-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Rainer Butendeich , Hailing Cui , Reiner Windisch , Jörg Frischeisen , Stefan Lange
IPC: H01L33/00 , H01L33/44 , F21V9/16 , H01L25/075
CPC classification number: H01L33/00 , F21V9/30 , H01L25/0753 , H01L33/504 , H01L2933/0041 , H01L2933/0091
Abstract: A luminescence conversion element for wavelength conversion of primary electromagnetic radiation into secondary electromagnetic radiation includes first luminescent material particles that, when excited by the primary electromagnetic radiation, emit a first electromagnetic radiation, a peak wavelength of which is at least 515 nm to at most 550 nm of a green region of the electromagnetic spectrum; second luminescent material particles that, when excited by the primary electromagnetic radiation, emit a second electromagnetic radiation, a peak wavelength of which is at least 595 nm to at most 612 nm of a yellow-red region of the electromagnetic spectrum; and third luminescent material particles that, when excited by the primary electromagnetic radiation, emit a third electromagnetic radiation, a peak wavelength of which is at least 625 nm to at most 660 nm of a red region of the electromagnetic spectrum.
Abstract translation: 用于主电磁辐射到次级电磁辐射的波长转换的发光转换元件包括第一发光材料颗粒，当第一电磁辐射激发时，发射第一电磁辐射，其峰值波长为至少515nm至至多550 nm的电磁光谱的绿色区域; 第二发光材料颗粒，当被主要电磁辐射激发时，其发射第二电磁辐射，其峰值波长为电磁光谱的黄色 - 红色区域的至少595nm至最多612nm; 以及第三发光材料颗粒，当被主电磁辐射激发时，其发射第三电磁辐射，其峰值波长为电磁光谱的红色区域的至少625nm至至多660nm。
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公开(公告)号：US09530931B2
公开(公告)日：2016-12-27
申请号：US14662037
申请日：2015-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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公开(公告)号：US20150252962A1
公开(公告)日：2015-09-10
申请号：US14423026
申请日：2013-08-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Rainer Butendeich , Matthias Sabathil
CPC classification number: F21V9/30 , F21K9/64 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L33/504 , H01L2924/0002 , H05B33/14 , H01L2924/00
Abstract: The invention relates to an An arrangement (1) for generating white light (5), having at least two light-emitting diodes, wherein the first diode (2) is designed to generate blue light, wherein a conversion element (4) is associated with the first diode, wherein the conversion element is designed to convert a part of the blue light from the first diode into green light, and wherein the conversion element is designed to convert a part of the blue light from the first diode into red light, wherein the second diode (3) is provided to emit red light.
Abstract translation: 本发明涉及一种用于产生具有至少两个发光二极管的白光（5）的安排（1），其中第一二极管（2）被设计成产生蓝光，其中转换元件（4）相关联 与所述第一二极管，其中所述转换元件被设计成将来自所述第一二极管的蓝光的一部分转换成绿光，并且其中所述转换元件被设计为将来自所述第一二极管的蓝光的一部分转换成红光， 其中所述第二二极管（3）被提供以发射红光。
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公开(公告)号：US20150194570A1
公开(公告)日：2015-07-09
申请号：US14662037
申请日：2015-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorm
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
Abstract translation: 半导体芯片包括具有半导体层序列的半导体本体。 用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。 掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。
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