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    PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS
    11.
    发明申请
    PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS 审中-公开

    公开(公告)号：US20190235385A1

    公开(公告)日：2019-08-01

    申请号：US16245631

    申请日：2019-01-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

    IPC: G03F7/11 ,  G03F7/038 ,  G03F7/09 ,  G03F7/16 ,  G03F7/00 ,  G03F7/40 ,  G03F7/20 ,  H01L21/027 ,  G03F7/38 ,  B05C11/08

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

    Photoresist topcoat compositions and methods of processing photoresist compositions
    13.
    发明授权
    Photoresist topcoat compositions and methods of processing photoresist compositions 有权

    公开(公告)号：US10197918B2

    公开(公告)日：2019-02-05

    申请号：US15730875

    申请日：2017-10-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

    IPC: G03F7/11 ,  G03F7/09 ,  G03F7/038 ,  B05C11/08 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  G03F7/40 ,  G03F7/38

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

    Photoresist pattern trimming methods
    14.
    发明授权
    Photoresist pattern trimming methods 有权

    公开(公告)号：US09996008B2

    公开(公告)日：2018-06-12

    申请号：US15243937

    申请日：2016-08-22

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cheng-Bai Xu

    IPC: H01L21/4757 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/311

    CPC classification number: G03F7/38 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/31138

    Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

    Gap-fill methods
    15.
    发明授权
    Gap-fill methods 有权
    间隙填充方法

    公开(公告)号：US09558987B2

    公开(公告)日：2017-01-31

    申请号：US14582149

    申请日：2014-12-23

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Jae Hwan Sim ,  Jin Hong Park ,  Jae-Bong Lim ,  Jung Kyu Jo ,  Cheng-Bai Xu ,  Jong Keun Park ,  Mingqi Li ,  Phillip D. Hustad

    IPC: H01L21/31 ,  H01L21/762 ,  H01L21/3105

    CPC classification number: H01L21/76224 ,  H01L21/31058

    Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

    Abstract translation: 间隙填充方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含非交联的可交联聚合物，酸催化剂，交联剂和溶剂，其中所述可交联聚合物包含以下通用物质的第一单元 式（I）：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且Ar1是不含可交联基团的任选取代的芳基; 和下列通式（II）的第二单元：其中：R 3选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且R 4选自任选取代的C 1至C 12直链，支链或环状烷基，以及任选含有杂原子的任选取代的C 6至C 15芳基，其中至少一个氢原子被独立地选自羟基，羧基，硫醇， 胺，环氧，烷氧基，酰胺和乙烯基; 和（c）在一定温度下加热间隙填充组合物以使聚合物交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

    Ion implantation methods
    19.
    发明授权
    Ion implantation methods 有权
    离子注入法

    公开(公告)号：US09209028B2

    公开(公告)日：2015-12-08

    申请号：US14145674

    申请日：2013-12-31

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cheng-Bai Xu ,  Cheng Han Wu ,  Dong Won Chung ,  Yoshihiro Yamamoto ,  George G. Barclay ,  Gerhard Pohlers

    IPC: H01L21/266 ,  H01L21/02 ,  H01L21/3105

    CPC classification number: H01L21/266 ,  G03F7/091 ,  G03F7/405 ,  H01L21/0206 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/31058

    Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; an acid generator chosen from thermal acid generators, photoacid generators and combinations thereof; and a solvent; (d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid generator; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

    Abstract translation: 提供了在半导体器件中形成离子注入区域的方法。 所述方法包括：（a）提供具有要离子注入的多个区域的半导体衬底; （b）在半导体衬底上形成光致抗蚀剂图案，其中光致抗蚀剂图案由包含具有酸不稳定基团的基质聚合物，光致酸产生剂和溶剂的化学放大光致抗蚀剂组合物形成; （c）在所述光致抗蚀剂图案上涂覆去除组合物，其中所述去除组合物包含：基体聚合物; 选自热酸发生剂，光酸产生剂及其组合的酸发生剂; 和溶剂; （d）将所述涂覆的半导体衬底暴露于所述除酸组合物中从所述酸产生器产生酸的条件; （e）使涂覆的半导体衬底与漂洗剂接触以从衬底去除残留的去除组合物和浮渣; 和（f）使用光刻胶图案作为植入物掩模离子注入半导体衬底的多个区域。 该方法在半导体器件的制造中具有特别的适用性。

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