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公开(公告)号：US10903397B2
公开(公告)日：2021-01-26
申请号：US16851354
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il Kim , Hyong Sik Won , Wan Tae Lim , Nam Goo Cha
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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公开(公告)号：US10763399B2
公开(公告)日：2020-09-01
申请号：US15684144
申请日：2017-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Gun Lee , Yong Il Kim , Young Soo Park , Jin Sub Lee , Wan Tae Lim
Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.
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公开(公告)号：US10103301B2
公开(公告)日：2018-10-16
申请号：US15617669
申请日：2017-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hanul Yoo , Yong Il Kim , Sung Hyun Sim , Wan Tae Lim , Hye Seok Noh , Ji Hye Yeon
IPC: H01L33/58 , H01L33/06 , H01L33/32 , H01L33/22 , H01L33/12 , H01L33/50 , H01L33/40 , H01L33/00 , F21K9/235 , F21V29/76 , F21K9/238 , F21K9/232
Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
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公开(公告)号：US09954028B2
公开(公告)日：2018-04-24
申请号：US15449396
申请日：2017-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye Yeon , Sung Hyun Sim , Wan Tae Lim , Yong Il Kim , Hanul Yoo
CPC classification number: H01L27/156 , H01L33/50
Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
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公开(公告)号：US09099629B2
公开(公告)日：2015-08-04
申请号：US13929431
申请日：2013-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong In Yang , Yong Il Kim , Kwang Min Song , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2224/16 , H01L2933/0016
Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
Abstract translation: 半导体发光器件包括第一导电半导体层，有源层，第二导电半导体层，第一内部电极，第二内部电极，绝缘部分以及第一和第二焊盘电极。 有源层设置在第一导电半导体层的第一部分上，并且其上设置有第二导电层。 第一内部电极设置在与第一部分分离的第一导电半导体层的第二部分上。 第二内部电极设置在第二导电半导体层上。 绝缘部分设置在第一和第二内部电极之间，并且第一和第二焊盘电极设置在绝缘部分上以连接到第一和第二内部电极中的相应一个。
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Patent Agency Ranking
公开(公告)号：US10991857B2
公开(公告)日：2021-04-27
申请号：US16442870
申请日：2019-06-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae Lim , Sung Hyun Sim , Hanul Yoo , Yong Il Kim , Hye Seok Noh , Ji Hye Yeon
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号：US10573628B2
公开(公告)日：2020-02-25
申请号：US15971196
申请日：2018-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号：US10217914B2
公开(公告)日：2019-02-26
申请号：US15163204
申请日：2016-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo Cha , Wan Tae Lim , Yong Il Kim , Hye Seok Noh , Eun Joo Shin , Sung Hyun Sim , Hanul Yoo
IPC: H01L29/49 , H01L33/58 , H01L33/50 , H01L33/44 , H01L33/00 , F21Y103/10 , F21Y115/10 , F21S8/02 , F21V23/00 , F21K9/275 , F21K9/237
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
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公开(公告)号：US09825016B1
公开(公告)日：2017-11-21
申请号：US15386425
申请日：2016-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
CPC classification number: H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号：US09070835B2
公开(公告)日：2015-06-30
申请号：US14146689
申请日：2014-01-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon Yoon , Sang Yeon Kim , Seung Hwan Lee , Jin Hyun Lee , Wan Tae Lim , Hyun Kwon Hong
CPC classification number: H01L33/382 , H01L33/20 , H01L33/22 , H01L33/40 , H01L33/44 , H01L2224/13 , H01L2933/0016
Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
Abstract translation: 一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。
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