公开(公告)号：US09882211B2

公开(公告)日：2018-01-30

申请号：US14704508

申请日：2015-05-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Tatsuya Ikenuma ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Mako Motoyoshi ,  Hiroyuki Miyake ,  Yohei Momma ,  Takuya Hirohashi ,  Satoshi Seo

IPC: H01M4/36 ,  H01M4/485 ,  H01M4/48 ,  H01M4/62 ,  H01M4/583 ,  G06F1/16 ,  H01M4/505 ,  G04G21/00 ,  H01M4/525 ,  H01M10/052

CPC classification number: H01M4/485 ,  G04C10/00 ,  G04G21/00 ,  G06F1/16 ,  G06F1/1626 ,  G06F1/163 ,  G06F1/1635 ,  G06F1/1652 ,  H01M4/366 ,  H01M4/483 ,  H01M4/505 ,  H01M4/525 ,  H01M4/583 ,  H01M4/623 ,  H01M4/625 ,  H01M10/052 ,  H01M2220/30

Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with improved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.

公开(公告)号：US09871058B2

公开(公告)日：2018-01-16

申请号：US14688232

申请日：2015-04-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/786 ,  G02F1/1368 ,  H01L29/04 ,  H01L27/12 ,  C23C14/08 ,  H01L21/66 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US09754972B2

公开(公告)日：2017-09-05

申请号：US14688232

申请日：2015-04-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/786 ,  G02F1/1368 ,  H01L29/04 ,  H01L27/12 ,  H01L21/66 ,  H01L29/24 ,  C23C14/08 ,  H01L29/66 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US09577107B2

公开(公告)日：2017-02-21

申请号：US14208982

申请日：2014-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Takahisa Ishiyama ,  Masaki Koyama ,  Erumu Kikuchi ,  Takuya Hirohashi ,  Masashi Oota

IPC: H01L21/00 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02678 ,  H01L21/02686 ,  H01L29/66969

Abstract: To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface with a base or the vicinity of the interface, and to provide a method for forming the oxide semiconductor film. An oxide semiconductor film containing indium, gallium, and zinc is formed, and the oxide semiconductor film is irradiated with an energy beam, thereby being heated. Note that the oxide semiconductor film includes a c-axis aligned crystal region or microcrystal.

Abstract translation: 为了改善氧化物半导体的结晶度。 提供结晶化区域延伸到与基底或界面附近的界面的结晶氧化物半导体膜，并提供形成氧化物半导体膜的方法。 形成含有铟，镓和锌的氧化物半导体膜，并用能量束照射氧化物半导体膜，由此被加热。 注意，氧化物半导体膜包括c轴取向的晶体区域或微晶体。

公开(公告)号：US09496414B2

公开(公告)日：2016-11-15

申请号：US15074245

申请日：2016-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US09324878B2

公开(公告)日：2016-04-26

申请号：US14570565

申请日：2014-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US09318617B2

公开(公告)日：2016-04-19

申请号：US14574964

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L21/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/12 ,  H01L21/263 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Abstract translation: 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。

公开(公告)号：US09214563B2

公开(公告)日：2015-12-15

申请号：US13947334

申请日：2013-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/417

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Abstract translation: 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。

公开(公告)号：US09054134B2

公开(公告)日：2015-06-09

申请号：US14202670

申请日：2014-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

IPC: H01L21/00 ,  H01L21/336 ,  H01L27/108 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract translation: 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

公开(公告)号：US20140183527A1

公开(公告)日：2014-07-03

申请号：US14141538

申请日：2013-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Masashi Oota

IPC: H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

Abstract translation: 提供了包括氧化物半导体的高度可靠的半导体器件。 提供了一种半导体器件，包括氧化物半导体层，与氧化物半导体层接触的绝缘层，与氧化物半导体层重叠的栅极电极层，以及与氧化物半导体层电连接的源极电极层和漏极电极层 。 氧化物半导体层包括具有尺寸小于或等于10nm的晶体的第一区域和与其间设置有第一区域的绝缘层重叠的第二区域，并且其包括其c轴对准的晶体部分 与氧化物半导体层的表面的法线矢量平行的方向。