公开(公告)号：US20210020667A1

公开(公告)日：2021-01-21

申请号：US17041852

申请日：2019-04-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yuichi SATO ,  Hitoshi NAKAYAMA

IPC: H01L27/12 ,  H01L29/24 ,  H01L27/108

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

公开(公告)号：US20140342499A1

公开(公告)日：2014-11-20

申请号：US14451683

申请日：2014-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

IPC: H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/04

CPC classification number: H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

Abstract translation: 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

公开(公告)号：US20240002998A1

公开(公告)日：2024-01-04

申请号：US18213683

申请日：2023-06-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yuichi SATO ,  Fumito ISAKA ,  Toshikazu OHNO

IPC: C23C14/34

CPC classification number: C23C14/3414

Abstract: A novel sputtering target is provided. The sputtering target includes a first region and a second region. The first region contains a first metal oxide containing an element M1 (the element M1 is one or more elements selected from Al, Ga, Si, Mg, Zr, and B). The second region contains a second metal oxide containing indium and zinc. The first region and the second region are separated from each other. Each of the first region and the second region is a crystal grain. A crystal grain boundary is observed between the first region and the second region. The diameter of each of the first region and the second region is greater than or equal to 5 nm and less than or equal to 10 μm.

公开(公告)号：US20180190827A1

公开(公告)日：2018-07-05

申请号：US15908215

申请日：2018-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka OKAZAKI ,  Daisuke MATSUBAYASHI ,  Yuichi SATO

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/78 ,  H01L21/441 ,  H01L29/45 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7853 ,  H01L29/78603 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A semiconductor device in which parasitic capacitance is reduced is provided. A first insulating layer is deposited over a substrate. A first oxide insulating layer and an oxide semiconductor layer are deposited over the first insulating layer. A second oxide insulating layer is deposited over the oxide semiconductor layer and the first insulating layer. A second insulating layer and a first conductive layer are deposited over the second oxide insulating layer. A gate electrode layer, a gate insulating layer, and a third oxide insulating layer are formed by etching. A sidewall insulating layer including a region in contact with a side surface of the gate electrode layer is formed. A second conductive layer is deposited over the gate electrode layer, the sidewall insulating layer, the oxide semiconductor layer, and the first insulating layer. A third conductive layer is deposited over the second conductive layer. A low-resistance region is formed in the oxide semiconductor layer by performing heat treatment. An element contained in the second conductive layer moves from the second conductive layer to the oxide semiconductor layer side by performing the heat treatment. An element contained in the oxide semiconductor layer moves from the oxide semiconductor layer to the third conductive layer side by performing the heat treatment.

公开(公告)号：US20170005126A1

公开(公告)日：2017-01-05

申请号：US15193677

申请日：2016-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Riho KATAISHI ,  Hiroshi OHKI ,  Yuichi SATO ,  Daisuke MATSUBAYASHI

IPC: H01L27/146 ,  H01L31/109 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/0272

CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14665 ,  H01L27/14694 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/022475 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109

Abstract: An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In—Ga—Zn oxide including c-axis-aligned crystals.

Abstract translation: 提供了具有出色成像性能的成像装置。 提供了在低照度条件下容易进行成像的成像装置。 提供了一种低功耗成像装置。 提供了其像素之间的特性变化小的成像装置。 提供了高度集成的成像装置。 光电转换元件包括第一电极和第一层，第二层和第三层。 第一层设置在第一电极和第三层之间。 第二层设置在第一层和第三层之间。 第一层含硒。 第二层含有金属氧化物。 第三层包含金属氧化物，并且还含有稀有气体原子，磷和硼中的至少一种。 硒可以是结晶硒。 第二层可以是包括c轴对准晶体的In-Ga-Zn氧化物层。

公开(公告)号：US20160043231A1

公开(公告)日：2016-02-11

申请号：US14920244

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract translation: 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

公开(公告)号：US20130137232A1

公开(公告)日：2013-05-30

申请号：US13686204

申请日：2012-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Yuichi SATO ,  Kosei NODA

IPC: H01L29/66 ,  H01L21/265

CPC classification number: H01L29/66477 ,  H01L21/02565 ,  H01L21/265 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

公开(公告)号：US20240347644A1

公开(公告)日：2024-10-17

申请号：US18627560

申请日：2024-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shun OHTA ,  Rena WAKASA ,  Jesper EKLIND ,  Yuichi SATO

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: A semiconductor device having excellent electrical characteristics is provided. The semiconductor device includes a first conductive layer, a first insulating layer over the first conductive layer, an oxide semiconductor layer over the first insulating layer, a second conductive layer, a third conductive layer, and a second insulating layer over the oxide semiconductor layer, and a fourth conductive layer over the second insulating layer. The second conductive layer and the third conductive layer each contain tantalum and nitrogen. In each of the second conductive layer and the third conductive layer, the percentage of a first tantalum bonding state is lower than or equal to 3%, and the percentage of a second tantalum bonding state is higher than or equal to 5%. The first tantalum bonding state is a bonding state of tantalum metal and a bonding state of tantalum nitride with stoichiometrically less nitrogen per tantalum, and the second tantalum bonding state is a bonding state of tantalum nitride with stoichiometrically equal nitrogen per tantalum.

公开(公告)号：US20240090194A1

公开(公告)日：2024-03-14

申请号：US18232413

申请日：2023-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi SATO ,  Ryota HODO ,  Yuta IIDA ,  Tomoaki MORIWAKA

IPC: H10B12/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L23/532

CPC classification number: H10B12/30 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3212 ,  H01L23/5329 ,  H10B12/02

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US20230389332A1

公开(公告)日：2023-11-30

申请号：US18032651

申请日：2021-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Toshikazu OHNO ,  Yuichi SATO ,  Sachie ETO ,  Shinobu KAWAGUCHI

IPC: H10B53/30

CPC classification number: H10B53/30

Abstract: A ferroelectric device having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor over a first insulator, a ferroelectric layer over the first conductor, a second conductor over the ferroelectric layer, a second insulator over the second conductor, and a third insulator surrounding the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or fixing hydrogen, and the third insulator has a function of inhibiting hydrogen diffusion.