公开(公告)号：US09914233B2

公开(公告)日：2018-03-13

申请号：US14423607

申请日：2013-09-03

Applicant: Soitec

Inventor： Didier Landru

IPC: B32B38/10 ,  B26D3/28 ,  B26D7/00 ,  B26D7/08 ,  B32B43/00

CPC classification number: B26D3/28 ,  B26D7/0006 ,  B26D7/08 ,  B26D7/088 ,  B32B38/10 ,  B32B43/006 ,  H01L21/67092 ,  Y10T156/1179 ,  Y10T156/1184 ,  Y10T156/1961 ,  Y10T156/1967

Abstract: This disclosure relates to a device for separating two substrates to be utilized in electronics, optics, optoelectronics and/or photovoltaics. The device separates the substrates at an interface, the device comprising a holder; a member for retaining the structure, the member being mounted on the holder; a tool for separating the two substrates, also mounted on the holder; and means for moving the separating tool and/or means for moving the retaining member relative to the holder so as to bring them closer together or move them farther apart from each other, preferably over a limited range of travel. This device is noteworthy in that the separating tool comprises a leading edge that has, in cross-section, in succession from its tip or its front edge to its back, a tapered portion that is extended by a flared portion.

公开(公告)号：US20170207101A1

公开(公告)日：2017-07-20

申请号：US15403505

申请日：2017-01-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Carole David

IPC: H01L21/3105 ,  H01L21/762

CPC classification number: H01L21/31051 ,  H01L21/302 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/7624 ,  H01L21/76254

Abstract: A process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment includes performing a first heat treatment step at a first temperature and under a first gas flow defined by a first flow rate, and performing a second heat treatment step at a second temperature lower than the first temperature and under a second gas flow defined by a second flow rate lower than the first flow rate.

公开(公告)号：US09659777B2

公开(公告)日：2017-05-23

申请号：US14362208

申请日：2012-12-13

Applicant: Soitec

Inventor： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC: H01L21/428 ,  H01L21/268 ,  H01L21/02 ,  H01L21/20 ,  H01L21/324

CPC classification number: H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

Abstract: The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

公开(公告)号：US09589830B2

公开(公告)日：2017-03-07

申请号：US14686229

申请日：2015-04-14

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/683

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

Abstract translation: 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。

公开(公告)号：US20160358805A1

公开(公告)日：2016-12-08

申请号：US15170532

申请日：2016-06-01

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/762 ,  H01L21/48 ,  H01L23/13 ,  H01L21/56 ,  H01L23/15

CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

Abstract translation: 本公开涉及用于机械分离层的方法，特别是在双层转移工艺中。 本公开更具体地涉及用于机械分离层的方法，包括以下步骤：提供包括手柄衬底层和活性层的半导体化合物，其具有与前主侧相对的前主侧和后主侧， 其中所述手柄基板的所述层附着到所述有源层的前主侧，然后在所述有源层的所述后主侧上提供载体基板层，然后开始所述手柄基板的所述层的机械分离， 其中所述手柄基板的层和所述载体基板的层设置有基本对称的机械结构。

公开(公告)号：US20230411205A1

公开(公告)日：2023-12-21

申请号：US18451486

申请日：2023-08-17

Applicant: Soitec

Inventor： Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

CPC classification number: H01L21/76254 ,  H01L21/7813 ,  H01L21/26506

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

公开(公告)号：US11776843B2

公开(公告)日：2023-10-03

申请号：US17440450

申请日：2020-03-25

Applicant: Soitec

Inventor： Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/7813

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises:



arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

公开(公告)号：US11742233B2

公开(公告)日：2023-08-29

申请号：US17135340

申请日：2020-12-28

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US20230260841A1

公开(公告)日：2023-08-17

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/32

CPC classification number: H01L21/7813 ,  H01L21/02079 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02628 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/325

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US20230160102A1

公开(公告)日：2023-05-25

申请号：US17907509

申请日：2021-01-12

Applicant: Soitec

Inventor： Hugo Biard ,  Ionut Radu ,  Didier Landru

IPC: C30B25/20 ,  H01L21/02 ,  C30B25/18 ,  C30B31/22 ,  C23C16/01 ,  C23C16/32 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

CPC classification number: C30B25/20 ,  C23C14/48 ,  C23C14/588 ,  C23C16/01 ,  C23C16/56 ,  C23C16/325 ,  C30B25/183 ,  C30B31/22 ,  H01L21/02002

Abstract: A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.