公开(公告)号：US20150221792A1

公开(公告)日：2015-08-06

申请号：US14582177

申请日：2014-12-23

Applicant: Solexel, Inc.

Inventor： Anand Deshpande ,  Pawan Kapur ,  Mehrdad M. Moslehi ,  Virendra V. Rana ,  Sean M. Seutter

IPC: H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/028 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods for forming self aligned contacts for back contact solar cells are provided.

Abstract translation: 提供了用于形成用于背接触太阳能电池的自对准触头的制造方法。

公开(公告)号：US20150171240A1

公开(公告)日：2015-06-18

申请号：US14493341

申请日：2014-09-22

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L27/1421 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/547

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided.

Abstract translation: 根据所公开的主题的一个方面，提供了一种使用块状晶片形成单片背面接触背面太阳能电池的方法。

公开(公告)号：US20130213469A1

公开(公告)日：2013-08-22

申请号：US13855657

申请日：2013-04-02

Applicant: Solexel, Inc.

Inventor： Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Virendra V. Rana ,  David Dutton ,  Sean M. Seutter ,  Anthony Calcaterra ,  Jay Ashjaee ,  Takao Yonehara

IPC: H01L31/0224

CPC classification number: H01L31/022458 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.

Abstract translation: 提供了与太阳能电池的多层金属化相关的制造方法和结构以及用于形成背接触太阳能电池的制造方法和结构。

公开(公告)号：US09768343B2

公开(公告)日：2017-09-19

申请号：US14787858

申请日：2014-04-29

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Pawan Kapur ,  Sean M. Seutter ,  Mehrdad M. Moslehi

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224 ,  B23K26/00 ,  B23K26/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0352 ,  B23K26/0622 ,  B23K101/40 ,  B23K103/00

CPC classification number: H01L31/1864 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/18 ,  B23K26/355 ,  B23K2101/40 ,  B23K2103/56 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547

Abstract: Laser patterning methods utilize a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions to improve cell efficiency by avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

公开(公告)号：US20160336465A1

公开(公告)日：2016-11-17

申请号：US14949602

申请日：2015-11-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/056 ,  H01L31/068 ,  H01L31/02 ,  H01L31/0352

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

公开(公告)号：US09419165B2

公开(公告)日：2016-08-16

申请号：US13846230

申请日：2013-03-18

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  JianJun Liang ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

IPC: H01L31/068 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/0747 ,  H01L31/056

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for making a back contact solar cell. Base isolation regions are formed in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns. Pulsed laser ablation of a substance on the crystalline silicon back contact solar cell substrate is performed to form base openings, wherein the substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide. Emitter regions are selectively doped and base regions are selectively doped. Contact openings are formed for the selectively doped base regions and the selectively doped emitter regions. Metallization is formed on the selectively doped base regions and the selectively doped emitter regions.

Abstract translation: 一种制造背接触太阳能电池的方法。 在具有约1微米至100微米范围内的基底厚度的晶体硅背接触太阳能电池基板中形成基极隔离区。 进行晶体硅背接触太阳能电池基板上的物质的脉冲激光烧蚀以形成基底开口，其中所述物质是氧化硅，氮化硅，氧化铝，氮氧化硅或碳化硅中的至少一种。 发射极区域是选择性掺杂的，并且基极区域被选择性掺杂。 为选择性掺杂的基极区域和选择性掺杂的发射极区域形成接触开口。 在选择性掺杂的基极区域和选择性掺杂的发射极区域上形成金属化。

公开(公告)号：US20160093763A1

公开(公告)日：2016-03-31

申请号：US14787858

申请日：2014-04-29

Applicant: SOLEXEL, INC.

Inventor： Virendra V. Rana ,  Pawan Kapur ,  Sean M. Seutter ,  Mehrdad M. Moslehi

IPC: H01L31/18 ,  H01L31/0352

CPC classification number: H01L31/1864 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/18 ,  B23K26/355 ,  B23K2101/40 ,  B23K2103/56 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547

Abstract: The laser patterning methods utilizing a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions which may further improve cell efficiency by completely avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

Abstract translation: 激光图案化方法利用激光吸收硬掩模与湿蚀刻结合形成图案化太阳能电池掺杂区域，其可以通过完全避免与覆盖的透明钝化层的消融相关联的下面的半导体衬底的激光烧蚀来进一步提高电池效率。

公开(公告)号：US20160013335A1

公开(公告)日：2016-01-14

申请号：US14615335

申请日：2015-02-05

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Pawan Kapur ,  Thom Stalcup ,  David Xuan-Qi Wang ,  George D. Kamian ,  Kamran Manteghi ,  Yen-Sheng Su ,  Pranav Anbalagan ,  Virendra V. Rana ,  Anthony Calcaterra ,  Gerry Olsen ,  Wojciech Worwag

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/1804 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepreg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepreg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepreg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepreg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，将预浸料底板附着到基底电极和发射电极的交错图案上，在预浸料底板上形成孔，其提供对第一层 的导电金属，并且在预浸料背板的背面上沉积第二导电金属层，通过预浸料背板中的孔与第一导电金属层形成电互连。

公开(公告)号：US09214585B2

公开(公告)日：2015-12-15

申请号：US14265331

申请日：2014-04-29

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Benjamin Rattle ,  Heather Deshazer ,  Solene Coutant

IPC: H01L31/18 ,  H01L31/0445 ,  H01L31/049 ,  H01L33/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/056

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/049 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1896 ,  H01L33/0095 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：US20150162487A1

公开(公告)日：2015-06-11

申请号：US14557096

申请日：2014-12-01

Applicant: Solexel, Inc.

Inventor： Heather Deshazer ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Mehrdad M. Moslehi ,  Solene Coutant

IPC: H01L31/18

CPC classification number: H01L21/268 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions and passivation layers using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions.

Abstract translation: 本申请提供了使用激光加工形成太阳能电池基底和发射极区域以及钝化层的有效和有效的结构和方法。 激光吸收剂钝化材料形成在太阳能电池基板上，并使用激光烧蚀进行图案化以形成基极和发射极区域。