公开(公告)号：US20170092485A1

公开(公告)日：2017-03-30

申请号：US15374547

申请日：2016-12-09

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Seung-Chang Lee ,  Christian Wetzel ,  Mark Durniak

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L33/18 ,  H01L29/04 ,  H01L21/78 ,  H01L33/04

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

公开(公告)号：US09520472B2

公开(公告)日：2016-12-13

申请号：US14383833

申请日：2013-03-15

Applicant: STC.UNM

Inventor： Steven R. J. Brueck ,  Seung-Chang Lee ,  Christian Wetzel ,  Theeradetch Detchprohm ,  Christoph Stark

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/20 ,  H01L33/16 ,  H01L33/24 ,  H01L29/15

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02587 ,  H01L21/02598 ,  H01L21/02658 ,  H01L29/15 ,  H01L33/16 ,  H01L33/24

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.

Abstract translation: 公开了一种半导体器件。 半导体器件包括包括沟槽的衬底。 在槽的表面上形成缓冲层。 所述缓冲层包含至少一种选自AIN，GaN或Al x Ga 1-x N的材料，其中x在0和1之间。 外延生长的半导体材料设置在缓冲层之上，至少部分外延生长的半导体材料具有立方晶相结构。 还教导了形成半导体器件的方法。

公开(公告)号：US20200212198A1

公开(公告)日：2020-07-02

申请号：US16746853

申请日：2020-01-18

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Stephen D. Hersee ,  Seung-Chang Lee ,  Daniel Feezell

IPC: H01L29/66 ,  H01L29/06 ,  B82Y40/00 ,  H01L21/02 ,  H01L29/78 ,  H01L29/16 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/04 ,  H01L29/778 ,  H01L29/20

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

公开(公告)号：US10453996B2

公开(公告)日：2019-10-22

申请号：US15374547

申请日：2016-12-09

Applicant: STC.UNM

Inventor： Steven R. J. Brueck ,  Seung-Chang Lee ,  Christian Wetzel ,  Mark Durniak

IPC: H01L29/778 ,  H01L33/32 ,  H01L21/02 ,  H01L21/78 ,  H01L33/00 ,  H01L33/04 ,  H01L33/18 ,  H01L29/04

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

公开(公告)号：US20190103481A1

公开(公告)日：2019-04-04

申请号：US16191197

申请日：2018-11-14

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Seung-Chang Lee ,  Christian Wetzel ,  Mark Durniak

IPC: H01L29/778 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L21/02 ,  H01S5/32 ,  H01L29/04 ,  H01L29/66 ,  H01L29/423 ,  H01L29/205 ,  H01S5/343 ,  H01L33/00 ,  H01S5/02 ,  H01L33/24 ,  H01L29/40 ,  H01S5/227 ,  H01S5/22 ,  H01L33/32

Abstract: A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a hexagonal crystalline phase layer having a first region and a second region, the cubic crystalline phase structure being positioned between the first region and the second region of the hexagonal crystalline phase layer. A source region and a drain region are both positioned in the Group III/V compound semiconductor material. A channel region is in the Group III/V compound semiconductor material. A gate is over the channel region. An optional backside contact can also be formed. A source contact and electrode are positioned to provide electrical contact to the source region. A drain contact and electrode are positioned to provide electrical contact to the drain region. Methods of forming transistors are also disclosed.

公开(公告)号：US10109480B2

公开(公告)日：2018-10-23

申请号：US15599376

申请日：2017-05-18

Applicant: STC.UNM

Inventor： Seung-Chang Lee ,  Steven R. J. Brueck

IPC: H01L21/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40 ,  C30B23/02 ,  C30B29/42 ,  H01L29/06 ,  H01L29/267 ,  C30B7/00

Abstract: Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

公开(公告)号：US20170256405A1

公开(公告)日：2017-09-07

申请号：US15599376

申请日：2017-05-18

Applicant: STC.UNM

Inventor： Seung-Chang Lee ,  Steven R.J. Brueck

IPC: H01L21/02 ,  H01L29/267

CPC classification number: H01L21/02513 ,  C30B7/005 ,  C30B23/025 ,  C30B25/04 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/0665 ,  H01L29/0688 ,  H01L29/267

Abstract: Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially- single- particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.