Abstract:
A blocking element is provided for connecting an electronic, micro-mechanical and/or micro-electro-mechanical component, in particular for controlling the propulsion of an electric vehicle. The pin blocking element is formed by a holed body having a first end, a second end and an axial cavity configured for fittingly accommodating a connecting pin. A first flange projects transversely from the holed body at the first end and a second flange projects transversely from the holed body at the second end. The first flange has a greater area than the second flange and is configured to be ultrasonically soldered to a conductive bearing plate to form a power module.
Abstract:
A microelectronic device includes a chip housing a functional part and carrying first electrical contact regions in electrical connection with the functional part through first protected connections extending over or in the chip. A substrate has a first contact area and a second contact area, which is remote from the first contact area. The first contact area carries second electrical contact regions, and the second contact area carries external connection regions. The second contact regions and the external connection regions are in mutual electrical connection through second protected connections extending over or in the substrate. A protection-ring structure surrounds the first and second electrical contact regions and delimits a first chamber closed with respect to the outside. The first electrical contact regions and the second electrical contact regions are in mutual electrical contact.
Abstract:
A microelectronic device includes a chip housing a functional part and carrying first electrical contact regions in electrical connection with the functional part through first protected connections extending over or in the chip. A substrate has a first contact area and a second contact area, which is remote from the first contact area. The first contact area carries second electrical contact regions, and the second contact area carries external connection regions. The second contact regions and the external connection regions are in mutual electrical connection through second protected connections extending over or in the substrate. A protection-ring structure surrounds the first and second electrical contact regions and delimits a first chamber closed with respect to the outside. The first electrical contact regions and the second electrical contact regions are in mutual electrical contact.
Abstract:
An electronic device includes: a semiconductor body; a front metallization region; a top buffer region, arranged between the front metallization region and the semiconductor body; and a conductive wire, electrically connected to the front metallization region. The top buffer region is at least partially sintered.
Abstract:
A method for making a set of electronic devices is proposed. The method comprises the steps of providing a support comprising a base plate of electrically conductive material, fixing a set of chips of semiconductor material onto respective portions of the base plate, each chip having a first main surface with at least one first conduction terminal and a second main surface opposite the first main surface with at least one second conduction terminal electrically connected to the base plate, fixing an insulating tape of electrically insulating material comprising a plurality of through-holes to the main surface of each chip, the insulating tape protruding from the chips over a further portion of the base plate being not covered by the chips, and forming at least one first electrical contact to each first terminal of the chips through a first set of the through-holes exposing at least in part said first terminal, and at least one second electrical contact to the base plate through a second set of the through-holes exposing at least in part the further portion of the base plate.
Abstract:
Packaged device having a carrying base; an accommodation cavity in the carrying base; a semiconductor die in the accommodation cavity, the semiconductor die having die pads; a protective layer, covering the semiconductor die and the carrying base; first vias in the protective layer, at the die pads; and connection terminals of conductive material. The connection terminals have first connection portions in the first vias, in electrical contact with the die pads, and second connection portions, extending on the protective layer, along a side surface of the packaged device.
Abstract:
A power semiconductor device including a first and second die, each including a plurality of conductive contact regions and a passivation region including a number of projecting dielectric regions and a number of windows. Adjacent windows are separated by a corresponding projecting dielectric region with each conductive contact region arranged within a corresponding window. A package of the surface mount type houses the first and second dice. The package includes a first bottom insulation multilayer and a second bottom insulation multilayer carrying, respectively, the first and second dice. A covering metal layer is arranged on top of the first and second dice and includes projecting metal regions extending into the windows to couple electrically with corresponding conductive contact regions. The covering metal layer moreover forms a number of cavities, which are interposed between the projecting metal regions so as to overlie corresponding projecting dielectric regions.
Abstract:
A microelectronic device includes a chip housing a functional part and carrying first electrical contact regions in electrical connection with the functional part through first protected connections extending over or in the chip. A substrate has a first contact area and a second contact area, which is remote from the first contact area. The first contact area carries second electrical contact regions, and the second contact area carries external connection regions. The second contact regions and the external connection regions are in mutual electrical connection through second protected connections extending over or in the substrate. A protection-ring structure surrounds the first and second electrical contact regions and delimits a first chamber closed with respect to the outside. The first electrical contact regions and the second electrical contact regions are in mutual electrical contact.
Abstract:
An electronic device includes at least one chip and an insulating body embedding the chip. The electronic device further includes a heat-sink in contact with the chip. The heat-sink includes a plate having a first thickness. A recess is provided in the plate that defines a central portion of the plate having a second thickness less than the first thickness. The chip is mounted to the central region of the heat-sink within the recess. The insulating body includes a surface, such as a mounting surface, including an opening exposing at least a portion of the heat-sink. The device may further include a reophore extending through a side surface of the insulating body, that reophore being in contact with the heat sink.
Abstract:
An electronic device comprising: a semiconductor die integrating an electronic component; a leadframe housing the semiconductor die; a protection body, which surrounds laterally and at the top the semiconductor die and, at least in part, the leadframe structure, defining a top surface, a bottom surface, and a thickness of the electronic device; and a conductive lead electrically coupled to the semiconductor die. The conductive lead is modelled in such a way as to extend throughout the thickness of the protection body for forming a front electrical contact accessible from the top surface of the electronic device, and a rear electrical contact accessible from the bottom surface of the electronic device.