Abstract:
A display apparatus includes a base substrate and a buffer layer disposed on the base substrate. The display apparatus further includes an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion. The display apparatus further includes a gate insulating layer disposed on the channel portion, a gate electrode disposed on the gate insulating layer, and a protective layer disposed on the gate electrode and the buffer layer and having a contact hole. The display apparatus further includes a transparent electrode overlapping a portion of the protective layer and electrically connected to one of the source electrode and the drain electrode through the contact hole. The transparent electrode includes a transparent metal layer and a transparent conductive oxide layer overlapping the transparent metal layer.
Abstract:
A cover window, a manufacturing method of a cover window, and a display device including a cover window are provided. A cover window includes a folding portion and a non-folding portion, and the folding portion includes an inside surface that is compressed when folded and an outside surface that is stretched when folded, the folding portion includes a first layer adjacent to the outside surface, a second layer adjacent to the inside surface, and a third layer between the first layer and the second layer, the folding portion and the non-folding portion include at least one metal ion, a concentration of the metal ion included in the second layer is higher than a concentration of the metal ion included in the first layer, and the first layer includes a plurality of depletion regions.
Abstract:
A window drop test apparatus includes a support protruding in a first direction from the prop, and a guide portion that defines a drop space together with the support, where a drop test is performed through the drop space.
Abstract:
A display device includes: a substrate; a semiconductor on the substrate and including a driving channel; a first insulating layer on the semiconductor; a driving gate electrode on the first insulating layer and overlapping the driving channel; a second insulating layer on the driving gate electrode and the first insulating layer and including first and second dielectric constant layers, the second dielectric constant layer having a dielectric constant that is greater than that of the first dielectric constant layer; a storage electrode on the second insulating layer; a passivation layer covering the storage electrode and the second insulating layer; a pixel electrode on the passivation layer; an emission member on the pixel electrode; and a common electrode on the emission member, wherein the storage electrode overlaps the driving gate electrode, and wherein the storage electrode, the driving gate electrode and the second insulating layer therebetween form a storage capacitor.
Abstract:
An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.
Abstract:
A display apparatus includes a backlight assembly which generates a light and a display panel which receives the light to display an image, the display panel including a first substrate, a second substrate which faces the first substrate and is disposed closer to the backlight assembly than the first substrate, a gate line disposed on the first substrate, a data line disposed on the gate line and insulated from the gate line, a thin film transistor disposed on the first substrate and electrically connected to the gate line and the data line, and a reflection preventing layer disposed between the first substrate and the gate line to reduce an amount of a reflected light reflected by the gate line.
Abstract:
A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.
Abstract:
A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.
Abstract:
A method for manufacturing a display device includes providing a first display device assembly comprising a display module, a first window disposed on the display module, a first window adhesive layer disposed between the display module and the first window, and a first protective layer disposed on the first window. The first protective layer is removed. The first window is removed by providing an acid solution on the first display device assembly. A second window is provided that is disposed on the display module after the first window is removed. A second protective layer is provided that is disposed on the second window after the first protective layer is removed.
Abstract:
A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.