公开(公告)号：US20160064608A1

公开(公告)日：2016-03-03

申请号：US14838322

申请日：2015-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung Kyu CHUNG ,  Jung Sub KIM ,  Soo Jeong CHOI ,  Yeon Woo SEO ,  Dong Gun LEE

IPC: H01L33/24 ,  H01L33/12 ,  H01L33/32 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/18 ,  H01L33/32 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.

Abstract translation: 提供一种纳米结构半导体发光器件，包括：由第一导电型氮化物半导体形成的基极层; 以及多个发光纳米结构，其设置成在所述基底层上彼此间隔开，其中所述多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔; 应力控制层，设置在所述纳米孔的表面上，并且包括含有铟的氮化物半导体; 设置在应力控制层上的有源层; 设置在有源层上的第二导电型氮化物半导体层; 以及缺陷阻挡层，其设置在所述应力控制层的至少一部分上，并且包括具有低于所述应力控制层的晶格常数的晶格常数的氮化物半导体层。

公开(公告)号：US20150236202A1

公开(公告)日：2015-08-20

申请号：US14516470

申请日：2014-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Myung CHUN ,  Jung Sub KIM ,  Jin Sub LEE ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Young Jin Choi ,  Jae Hyeok HEO

IPC: H01L33/24 ,  H01L33/62 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.

Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。

公开(公告)号：US20170236866A1

公开(公告)日：2017-08-17

申请号：US15352933

申请日：2016-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Sub LEE ,  Han Kyu SEONG ,  Yong Il KIM ,  Jung Sub KIM ,  Seul Gee LEE

IPC: H01L27/15 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/153 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2933/0041 ,  H05B33/0845 ,  H05B33/086 ,  H05B37/0272

Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

公开(公告)号：US20170040490A1

公开(公告)日：2017-02-09

申请号：US15172976

申请日：2016-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub LEE ,  Jung Sub KIM

IPC: H01L33/12 ,  H01L33/40 ,  H01L33/04 ,  H01L33/32 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/005 ,  H01L21/02458 ,  H01L31/0236 ,  H01L33/04 ,  H01L33/12 ,  H01L33/22

Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括在衬底上形成下半导体层的第一区域，使用至少一种用于形成第一区域的气体蚀刻第一区域的上表面，原位于其中形成第一区域的工艺 区域，在第一区域上形成下半导体层的第二区域，在下半导体层上形成有源层，在有源层上形成上半导体层。

公开(公告)号：US20140203292A1

公开(公告)日：2014-07-24

申请号：US14158729

申请日：2014-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Jung Sub KIM

IPC: H01L33/48 ,  H01L33/50 ,  H01L33/32

CPC classification number: H01L33/50 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L33/507 ,  H01L2224/14 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.

Abstract translation: 半导体发光器件包括透光衬底，设置在透光衬底上的透光缓冲层和发光结构。 透光缓冲层包括具有不同折射率的第一层和第二层，交替设置至少一次。 发光结构包括依次设置在缓冲层上的第一导电型半导体层，有源层和第二导电型半导体层。