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    Semiconductor device, display device, and electronic appliance
    13.
    发明授权
    Semiconductor device, display device, and electronic appliance 有权
    半导体装置，显示装置和电子设备

    公开(公告)号：US09406808B2

    公开(公告)日：2016-08-02

    申请号：US13671638

    申请日：2012-11-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

    IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

    Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

    Abstract translation: 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。

    Thin film transistor
    14.
    发明授权
    Thin film transistor 有权

    公开(公告)号：US09306075B2

    公开(公告)日：2016-04-05

    申请号：US14621838

    申请日：2015-02-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

    IPC: H01L29/10 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/10 ,  H01L29/41733

    Abstract: A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

    Semiconductor device
    16.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09035305B2

    公开(公告)日：2015-05-19

    申请号：US14496500

    申请日：2014-09-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

    IPC: H01L29/78 ,  H01L29/12 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L21/02

    CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

    Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

    Abstract translation: 降低氧化物半导体的沟道形成区域中的氢浓度对于稳定包括氧化物半导体的晶体管的阈值电压和提高可靠性是重要的。 因此，氢被氧化物半导体吸引并被捕获在与氧化物半导体的源极区域和漏极区域重叠的绝缘膜的区域中。 杂质如氩，氮，碳，磷或硼添加到与氧化物半导体的源极区和漏极区重叠的绝缘膜的区域中，从而产生缺陷。 氧化物半导体中的氢被吸引到绝缘膜中的缺陷。 通过氢气的存在使绝缘膜中的缺陷稳定。

    Semiconductor device and method for manufacturing the same
    18.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08872175B2

    公开(公告)日：2014-10-28

    申请号：US13945323

    申请日：2013-07-18

    Applicant: Semiconductor Energy Laboratory, Co., Ltd.

    Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

    IPC: H01L29/10

    CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

    Abstract translation: 本发明的目的是提供一种包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括半导体层为氧化物半导体层的反交错薄膜晶体管的半导体器件中，在氧化物半导体层上设置有缓冲层。 缓冲层与半导体层的沟道形成区域和源极和漏极电极层接触。 缓冲层的膜具有电阻分布。 设置在半导体层的沟道形成区域上的区域具有比半导体层的沟道形成区域更低的导电性，并且与源极和漏极电极层接触的区域具有比半导体的沟道形成区域更高的导电性 层。

    Semiconductor device with oxide semiconductor layer
    19.
    发明授权
    Semiconductor device with oxide semiconductor layer 有权
    具有氧化物半导体层的半导体器件

    公开(公告)号：US08853690B2

    公开(公告)日：2014-10-07

    申请号：US13743546

    申请日：2013-01-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Hideyuki Kishida

    IPC: H01L29/10 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

    CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78696

    Abstract: An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.

    Abstract translation: 本发明的目的是提供一种包括包含Zn并且不包括诸如In或Ga的稀有金属的氧化物层的晶体管。另一个目的是减少包括含有Zn的氧化物层的晶体管中的截止电流和稳定电特性。 包括含有Zn的氧化物层的晶体管通过在氧化物层上层叠包含绝缘氧化物的氧化物半导体层而形成，使得氧化物层与源极电极层或漏极电极层接触，其中氧化物半导体层包括绝缘氧化物 从而可以减小晶体管的阈值电压的变化，并且可以使电特性稳定。

    Semiconductor device and method for manufacturing the same
    20.
    发明授权
    Semiconductor device and method for manufacturing the same 有权

    公开(公告)号：US08779421B2

    公开(公告)日：2014-07-15

    申请号：US13945323

    申请日：2013-07-18

    Applicant: Semiconductor Energy Laboratory, Co., Ltd.

    Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

    IPC: H01L29/10

    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

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